HMMC-5618 Avago Technologies US Inc., HMMC-5618 Datasheet - Page 5

• Manufacturer Part Number: HMMC-5618
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of HMMC-5618

• Number Of Channels: 1
• Frequency (max): 20GHz
• Output Power: 18@20000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3V
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 5.5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 140@5VmA
• Operating Temperature Classification: Industrial
• Operating Temp Range: -55C to 100C
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Compliant

[1]Effect of 0.2nH inductance in the RF input and RF output bond wires is modeled from measured wafer–probe tests calibrated at the pads of the MMIC device.
[2]Wafer–probed measurements.
10
15
20
25
22
20
18
16
14
12
20
15
10
5
0
0
5
2
2
0
V
V
V
D1
D1
D1
Inductance on Gain and Isolation[1]
Inductance on Input Return Loss[1]
=V
=V
=V
Effects of Input/Output Bond Wire
Effects of Input/Output Bond Wire
Power and Gain versus Backside
D2
D2
D2
20
=5.0V, V
=5.0V, V
6
=5.0V, V
6
Gain
0.025 dB/ C
wire inductance
Includes 0.2nH
Temperature ( C)
Temperature[2]
Frequency (GHz)
Frequency (GHz)
G1
G1
G1
10
10
40
Figure 6.
Figure 8.
Figure 4.
P
=V
=V
=V
sat
Spec Range
Spec Range
(5.9–20 GHz)
(5.9–20 GHz)
G2
G2
wire inductance
G2
Includes 0.2nH
P
Measurements
Measurements
Wafer-Probed
Wafer-Probed
=Open
=Open
=Open
1dB
14
60
14
Isolation
18
18
80
Gain
100
22
22
10
20
30
40
50
20
18
16
14
12
10
6 GHz
12 GHz
20 GHz
0
125
115
105
10
10
15
20
25
95
85
75
8
6
4
2
0
0
5
Drain Current versus Backside Temperature[2]
2
0
4
V
V
V
D1
D1
D1
=V
=V
Inductance on Output Return Loss[1]
=V
Noise Figure versus Frequency[2]
Effects of Input/Output Bond Wire
D2
D2
D2
=5.0V, V
20
=5.0V, V
6
=5.0V, V
8
wire inductance
Includes 0.2nH
Temperature ( C)
Frequency (GHz)
G1
Frequency (GHz)
G1
10
G1
40
=V
Figure 9.
Figure 5.
Figure 7.
=V
=V
Spec Range
(5.9–20 GHz)
(5.9–20 GHz)
G2
12
G2
G2
=Open
Measurements
Wafer–Probed
=Open
=Open
-0.08 mA/ C
14
60
16
18
80
100
22
20
5