SI6435DQ-T1 Vishay, SI6435DQ-T1 Datasheet
SI6435DQ-T1
Specifications of SI6435DQ-T1
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SI6435DQ-T1 Summary of contents
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... ° stg Symbol t ≤ thJA Steady State R Steady State thJF Si6435ADQ Vishay Siliconix ® Power MOSFETs S* * Source Pins and 7 must be tied common Steady State - 30 ± 20 ± 5.5 ± 4.7 ± 4.5 ± 3.7 ± 1.35 - 0.95 1.5 1.05 1.0 ...
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... Si6435ADQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... T = 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71104 S-80682-Rev. B, 31-Mar- °C J 0.8 1.0 1.2 Si6435ADQ Vishay Siliconix 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 5 1.4 1.2 1.0 0.8 0.6 ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71104. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...