SI6435DQ-T1 Vishay, SI6435DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6435DQ-T1
• Description: MOSFET Small Signal 30V 4.5A 1.5W
• Manufacturer: Vishay

Specifications of SI6435DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 4.7 A
• Power Dissipation: 1.05 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71104
S-80682-Rev. B, 31-Mar-08
0.15
0.12
0.09
0.06
0.03
30
10
10
0
1
8
6
4
2
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 5.5 A
0.2
On-Resistance vs. Drain Current
= 15 V
6
V
6
V
SD
GS
Q
g
- Source-to-Drain Voltage (V)
I
= 4.5 V
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
T
12
J
= 150 °C
0.6
18
18
0.8
V
GS
T
24
J
24
= 10 V
= 25 °C
1.0
1.2
30
30
2500
2000
1500
1000
0.20
0.15
0.10
0.05
500
1.6
1.4
1.2
1.0
0.8
0.6
0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 5.5 A
= 10 V
C
2
iss
6
T
V
V
0
J
C
DS
GS
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
50
= 5.5 A
Vishay Siliconix
Si6435ADQ
18
6
75
www.vishay.com
100
24
8
125
150
10
30
3