SI6435DQ-T1 Vishay, SI6435DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6435DQ-T1
• Description: MOSFET Small Signal 30V 4.5A 1.5W
• Manufacturer: Vishay

Specifications of SI6435DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 4.7 A
• Power Dissipation: 1.05 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6435ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71104.
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Single Pulse
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
50
40
30
20
10
10
1
0
10
-1
-2
Single Pulse Power, Junction-to-Ambient
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
1
= P
1
S-80682-Rev. B, 31-Mar-08
t
2
Document Number: 71104
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 100 °C/W
10
600
1
0
100