SI2315DS-T1 Vishay, SI2315DS-T1 Datasheet - Page 2

• Manufacturer Part Number: SI2315DS-T1
• Description: MOSFET Small Signal 12V 3.5A 1.25W
• Manufacturer: Vishay

Specifications of SI2315DS-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si2315BDS
Vishay Siliconix
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
b
a
a
a
a
J
= 25 °C, unless otherwise noted
V
Symbol
R
V
(BR)DSS
I
t
t
I
C
I
GS(th)
D(on)
DS(on)
V
Q
C
C
Q
d(on)
d(off)
GSS
DSS
Q
g
oss
t
t
SD
rss
iss
fs
gs
gd
r
f
g
V
V
DS
DS
I
V
= - 12 V, V
D
V
V
V
V
V
V
V
= - 6 V, V
V
GS
V
V
DS
DS
DS
GS
GS
I
DS
DS
≅ - 1.0 A, V
V
S
DS
GS
DS
DD
= - 1.6 A, V
Test Conditions
= - 4.5 V, I
≤ - 5 V, V
≤ - 5 V, V
= - 6 V, V
= - 2.5 V, I
= - 1.8 V, I
= V
= - 5 V, I
= - 12 V, V
= 0 V, I
= 0 V, V
I
= - 6 V, R
D
R
GS
≅ - 3.85 A
G
GS
GS
, I
= 6 Ω
D
D
GEN
= 0 V, f = 1 MHz
= 0 V, T
D
GS
GS
GS
GS
D
= - 250 µA
= - 10 µA
D
D
= - 3.85 A
GS
GS
= - 3.85 A
L
= - 4.5 V
= - 2.5 V
= - 3.4 A
= - 2.7 A
= ± 8 V
= - 4.5 V
= - 4.5 V
= 6 Ω
= 0 V
= 0 V
J
= 55 °C
- 0.45
Min.
- 12
- 6
- 3
Limits
0.040
0.050
0.071
Typ.
715
275
200
1.1
2.3
15
35
50
50
7
8
S-80642-Rev. E, 24-Mar-08
Document Number: 72014
- 0.90
± 100
0.050
0.065
0.100
Max.
- 1.2
- 10
- 1
15
20
50
70
75
Unit
nA
µA
nC
pF
ns
Ω
V
A
S
V