SI2315DS-T1 Vishay, SI2315DS-T1 Datasheet - Page 5

• Manufacturer Part Number: SI2315DS-T1
• Description: MOSFET Small Signal 12V 3.5A 1.25W
• Manufacturer: Vishay

Specifications of SI2315DS-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72014.
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
0.01
0.1
2
1
10
-4
0.05
0.1
0.02
Duty Cycle = 0.5
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
10
P
DM
JM
- T
A
t
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
Si2315BDS
(t)
t
t
1
2
100
= 130 °C/W
www.vishay.com
600
5