SI2315DS-T1 Vishay, SI2315DS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2315DS-T1
• Description: MOSFET Small Signal 12V 3.5A 1.25W
• Manufacturer: Vishay

Specifications of SI2315DS-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si2315BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.6
0.4
0.2
0.0
20
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
0.4
D
J
T
= 250 µA
- Temperature (°C)
25
J
= 150 °C
0.6
50
75
0.8
0.01
100
0.1
100
10
1
0.1
T
J
by R
* V
1.0
Limited
= 25 °C
125
GS
DS(on)*
1.2
minimum V
150
V
DS
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
A
1
= 25 °C
GS
at which R
DS(on)
10
0.4
0.3
0.2
0.1
0.0
12
10
8
6
4
2
0
0.01
0
1 ms, 100 µs
10 ms
100 ms
1 s
10 s
DC, 100 s
is specified
On-Resistance vs. Gate-to-Source Voltage
0.1
V
1
GS
100
- Gate-to-Source Voltage (V)
Single Pulse Power
2
I
1
D
Time (s)
= 3.5 A
S-80642-Rev. E, 24-Mar-08
Document Number: 72014
3
10
T
A
= 25 °C
4
100
600
5