EM6K31T2R Rohm Semiconductor, EM6K31T2R Datasheet
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Manufacturer Part Number
EM6K31T2R
Description
TRANS MOSFET N-CH 60V 0.25A EMT6
Manufacturer
Rohm Semiconductor
Specifications of EM6K31T2R
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
2.3V @ 1mA
Gate Charge (qg) @ Vgs
-
Input Capacitance (ciss) @ Vds
15pF @ 25V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
2.5V Drive Nch + Nch MOSFET
○
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
* Each terminal mounted on a recommended land.
Silicon N-channel MOSFET
1) High speed switing.
2) Small package(EMT6).
3) Low voltage drive(2.5V drive).
Switching
EM6K31
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
Channel to ambient
c
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta = 25C)
Thermal resistance
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EM6K31
2010 ROHM Co., Ltd. All rights reserved.
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
8000
V
V
Tstg
T2R
Tch
I
P
I
DSS
GSS
I
DP
I
sp
D
s
D
*1
*1
*2
*
55 to +150
Limits
Limits
250
1042
20
125
150
120
150
833
60
1
1
1/5
°C / W /ELEMENT
mW / ELEMENT
°C / W /TOTAL
mW / TOTAL
Unit
Unit
mA
mA
C
C
V
V
A
A
Dimensions (Unit : mm)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Inner circuit
∗2
(6)
(1)
6
Abbreviated symbol : K31
∗1
5
4
(2)
(5)
2010.09 - Rev.B
∗1
(4)
(3)
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
Related parts for EM6K31T2R
EM6K31T2R Summary of contents
Drive Nch + Nch MOSFET EM6K31 Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Low voltage drive(2.5V drive). Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) EM6K31 ...
EM6K31 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) ...
EM6K31 Electrical characteristic curves 0.5 Ta= 25C Pulsed 0 10V 4. 4. 2. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE ...
EM6K31 1 V =0V GS Pulsed 0.1 Ta=125C 0.01 Ta=75C Ta=25C Ta=-25C 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 Ta=25C f=1MHz V =0V GS Ciss 10 Crss Coss ...
EM6K31 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ○ 2010 ROHM Co., Ltd. ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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