ECH8673-TL-H ON Semiconductor, ECH8673-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8673-TL-H
• Description: MOSFET N/P-CH 40V 3.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8673-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 5.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics at Ta=25°C
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Parameter
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V (BR)DSS
I DSS
I GSS
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
I D =1mA, V GS =0V
V DS =40V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2A
I D =2A, V GS =10V
I D =1A, V GS =4.5V
I D =1A, V GS =4V
I D =--1mA, V GS =0V
V DS =--40V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1.5A
I D =--1.5A, V GS =--10V
I D =--0.75A, V GS =--4.5V
I D =--0.75A, V GS =--4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =20V, V GS =10V, I D =3.5A
V DS =20V, V GS =10V, I D =3.5A
V DS =20V, V GS =10V, I D =3.5A
I S =3.5A, V GS =0V
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--20V, V GS =--10V, I D =--2.5A
V DS =--20V, V GS =--10V, I D =--2.5A
V DS =--20V, V GS =--10V, I D =--2.5A
I S =--2.5A, V GS =0V
ECH8673
Conditions
min
--1.2
--40
1.2
40
Ratings
typ
--0.87
10.6
18.5
0.84
10.3
27.6
17.3
0.84
198
105
125
230
125
190
215
1.7
9.9
5.8
9.8
5.3
1.1
1.1
2.7
8.1
5.8
5.9
1.3
65
36
36
max
--2.6
--1.2
±10
±10
147
175
163
266
301
2.6
1.2
85
--1
No. A1892-2/6
1
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
S
S
V
V
V
V
V
V