ECH8673-TL-H ON Semiconductor, ECH8673-TL-H Datasheet - Page 4

• Manufacturer Part Number: ECH8673-TL-H
• Description: MOSFET N/P-CH 40V 3.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8673-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 5.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

--2.5
--2.0
--1.5
--1.0
--0.5
100
1.0
0.1
1.0
10
10
10
7
5
3
2
7
5
3
2
0.01
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0
0.1
0
0
V DS =20V
I D =3.5A
--0.1
2
2
3
1
--0.2
Drain-to-Source Voltage, V DS -- V
5 7
3
Total Gate Charge, Qg -- nC
--0.3
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
2
5
t d (on)
V GS -- Qg
|
--0.4
I D -- V DS
y
7
fs | -- I D
2
--0.5
1.0
3
3
5 7
--0.6
2
1.0
4
--0.7
3
2
--0.8
V DD =20V
V GS =10V
V DS =10V
3
5
5
--0.9 --1.0
IT16160
IT16162
IT16164
IT16166
5 7
[Nch]
[Nch]
[Nch]
7
[Pch]
10
10
6
ECH8673
1000
0.01
0.01
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
100
1.0
0.1
1.0
1.0
0.1
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0.1
0
0
0
V DS = --10V
Ta=25° C
Single pulse
When mounted on ceramic substrate
(1200mm
Operation in this
area is limited by R DS (on).
2
--0.5
5
0.2
3
2
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Gate-to-Source Voltage, V GS -- V
×0.8mm) 1unit
--1.0
5 7
10
0.4
1.0
--1.5
15
I D -- V GS
I S -- V SD
0.6
2
A S O
--2.0
20
3
0.8
5 7
--2.5
25
10
1.0
--3.0
30
2
No. A1892-4/6
3
V GS =0V
1.2
--3.5
f=1MHz
35
IT16161
IT16163
IT16165
IT16167
5
[Nch]
[Nch]
[Nch]
[Pch]
7
--4.0
100
1.4
40