EFC4618R-TR ON Semiconductor, EFC4618R-TR Datasheet

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... Source1 Gate1 3 : Gate2 Source2 0.3 SANYO : EFCP1818-4CC-037 EFC4618R SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V SSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (5000mm Tch Tstg Product & Package Information • Package • ...

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... Test circuits are example of measuring FET1 side Test Circuit 1 V SSS / I SSS Test Circuit (off 10V 1mA G1 S1 EFC4618R Symbol Conditions V (BR)SSS I S =1mA =0V Test Circuit 1 I SSS V SS =20V =0V Test Circuit 1 I GSS V GS =±8V =0V Test Circuit (off =10V =1mA ...

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... Source-to-Source Voltage (on 100 Gate-to-Source Voltage EFC4618R Test Circuit 6 V F(S-S) 4. IT11569 Test Circuit = =3.33Ω V OUT G2 G1 IT11571 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side 0.7 ...

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... Operation in this area 3 is limited (on Ta=25° Single pulse 2 2 When mounted on ceramic substrate (5000mm 0. 0.01 0.1 1.0 Source-to-Source Voltage EFC4618R = 1.0 10 Forward Source-to-Source Voltage, V F(S- IT16088 4 =10V V SS =10V V GS =4.5V 4 =6A 3.5 3.0 2.5 2.0 1.5 1.0 ...

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... Note on usage : Since the EFC4618R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...