EFC4618R-TR ON Semiconductor, EFC4618R-TR Datasheet - Page 4

• Manufacturer Part Number: EFC4618R-TR
• Description: MOSFET N-CH DUAL 24V 6A EFCP1818
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EFC4618R-TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: -
• Drain To Source Voltage (vdss): -
• Current - Continuous Drain (id) @ 25° C: -
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 1.6W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10000
1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
0.001
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.01
V SS =10V
Ta=25° C
Single pulse
When mounted on ceramic substrate (5000mm
Operation in this area
is limited by R SS (on).
2 3
2 3
2
3
5 7
5 7
Source-to-Source Voltage, V SS -- V
0.01
5 7
0.1
Source Current, I S -- A
Source Current, I S -- A
0.1
2 3
2
SW Time -- I S
3
|
y
t d (on)
5 7
5 7
fs | -- I S
2
A S O
0.1
1.0
3
5 7
2 3
2 3
1.0
5 7
2
5 7
×0.8mm)
1.0
10
2
V SS =10V
V GS =4.5V
2
2 3
3
3
IT16088
IT16090
5 7
IT16106
5 7
5
7 100
EFC4618R
10
10
0.01
1.0
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
0
Forward Source-to-Source Voltage, V F(S-S) -- V
V GS =0V
V SS =10V
I S =6A
0.1
20
5
0.2
Ambient Temperature, Ta -- °C
Total Gate Charge, Qg -- nC
40
0.3
10
I S -- V F(S-S)
When mounted on ceramic substrate
(5000mm
V GS -- Qg
0.4
60
P T -- Ta
0.5
15
2
80
×0.8mm)
0.6
100
20
0.7
120
0.8
No. A1881-4/5
25
0.9
IT16089
IT16091
IT16107
140 150
1.0
30