EFC4618R-TR ON Semiconductor, EFC4618R-TR Datasheet - Page 4
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EFC4618R-TR
Manufacturer Part Number
EFC4618R-TR
Description
MOSFET N-CH DUAL 24V 6A EFCP1818
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.EFC4618R-TR.pdf
(5 pages)
Specifications of EFC4618R-TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
-
Drain To Source Voltage (vdss)
-
Current - Continuous Drain (id) @ 25° C
-
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
-
Input Capacitance (ciss) @ Vds
-
Power - Max
1.6W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EFC4618R-TR
Manufacturer:
ON Semiconductor
Quantity:
4 000
10000
1000
0.01
0.01
100
100
1.0
0.1
1.0
0.1
10
10
0.001
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.01
V SS =10V
Ta=25° C
Single pulse
When mounted on ceramic substrate (5000mm
Operation in this area
is limited by R SS (on).
2 3
2 3
2
3
5 7
5 7
Source-to-Source Voltage, V SS -- V
0.01
5 7
0.1
Source Current, I S -- A
Source Current, I S -- A
0.1
2 3
2
SW Time -- I S
3
|
y
t d (on)
5 7
5 7
fs | -- I S
2
A S O
0.1
1.0
3
5 7
2 3
2 3
1.0
5 7
2
5 7
×0.8mm)
1.0
10
2
V SS =10V
V GS =4.5V
2
2 3
3
3
IT16088
IT16090
5 7
IT16106
5 7
5
7 100
EFC4618R
10
10
0.01
1.0
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
0
Forward Source-to-Source Voltage, V F(S-S) -- V
V GS =0V
V SS =10V
I S =6A
0.1
20
5
0.2
Ambient Temperature, Ta -- °C
Total Gate Charge, Qg -- nC
40
0.3
10
I S -- V F(S-S)
When mounted on ceramic substrate
(5000mm
V GS -- Qg
0.4
60
P T -- Ta
0.5
15
2
80
×0.8mm)
0.6
100
20
0.7
120
0.8
No. A1881-4/5
25
0.9
IT16089
IT16091
IT16107
140 150
1.0
30