EFC4618R-TR ON Semiconductor, EFC4618R-TR Datasheet - Page 3
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EFC4618R-TR
Manufacturer Part Number
EFC4618R-TR
Description
MOSFET N-CH DUAL 24V 6A EFCP1818
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.EFC4618R-TR.pdf
(5 pages)
Specifications of EFC4618R-TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
-
Drain To Source Voltage (vdss)
-
Current - Continuous Drain (id) @ 25° C
-
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
-
Input Capacitance (ciss) @ Vds
-
Power - Max
1.6W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EFC4618R-TR
Manufacturer:
ON Semiconductor
Quantity:
4 000
Test Circuit 5
R SS (on)
Test Circuit 7
t d (on), t r , t d (off), t f
PW=10μs
D.C.≤1%
G2
G1
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
0
0.1
V IN
0.2
Source-to-Source Voltage, V SS -- V
2
Gate-to-Source Voltage, V GS -- V
G2
G1
S2
S1
0.3
R SS (on) -- V GS
V DD =10V
I S -- V SS
0.4
4
0.5
0.6
6
S2
S1
I S =3A
R L =3.33Ω
V OUT
0.7
IT11569
IT11571
0.8
8
Ta=25°C
I S =3A
0.9
IT16105
IT16086
EFC4618R
1.0
10
* Note: Connect the mesurement terminal reversely
V F(S-S)
Qg
Test Circuit 6
Test Circuit 8
4.5V
if you want to measure the FET2 side.
G2
G1
G2
50
45
40
35
30
25
20
15
10
G1
6
5
4
3
2
1
0
5
0
--60 --40 --20
0
0.5
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- ° C
0
S2
S1
S2
S1
R SS (on) -- Ta
20
I S -- V GS
1.0
40
60
1.5
80
100
IT11570
IT15409
No. A1881-3/5
2.0
120
V SS =10V
140
IT16085
IT16087
160
2.5