TIM6472-35SL Toshiba, TIM6472-35SL Datasheet

no-image

TIM6472-35SL

Manufacturer Part Number
TIM6472-35SL
Description
Manufacturer
Toshiba
Datasheet
1.TIM6472-35SL.pdf (4 pages)

Specifications of TIM6472-35SL

Configuration
Single
Gate-source Voltage (max)
5V
Pin Count
3
Drain-source Volt (max)
15V
Operating Temperature (min)
-65C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Mounting
Screw
Continuous Drain Current
20A
Package Type
2-16G1B
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TIM6472-35SL
Manufacturer:
TOSHIBA
Quantity:
101
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
TIM6472-35SL
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Pout= 35.0dBm
Single Carrier Level
P1dB=45.5dBm at 6.4GHz to 7.2GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
VDS= 10V
f = 6.4 to 7.2GHz
Two Tone Test
CONDITIONS
CONDITIONS
= 10.5A
= 140mA
Po=35.0dBm
= -420
= 3V
=
=
= 0V
X Rth(c-c)
3V
3V
BROADBAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
HIGH GAIN
G1dB=8.0dB at 6.4GHz to 7.2GHz
MICROWAVE POWER GaAs FET
μ
A
TIM6472-35SL
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
45.0
MIN.
-1.0
-42
7.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
45.5
TYP. MAX.
6500
Rev. Jul., 2006
-45
8.0
8.0
8.0
-2.5
37
1.0
⎯
⎯
20
⎯
±0.8
100
9.0
9.0
-4.0
⎯
⎯
⎯
⎯
1.3
26
⎯
⎯

Related parts for TIM6472-35SL

Image
Part Number
Description
Manufacturer
Datasheet
Request R
TIM6472-16SL
Part Number:
TIM6472-16SL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-16SL.pdf (8 pages)
TIM6472-30SL
Part Number:
TIM6472-30SL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-30SL.pdf (8 pages)
TIM6472-45SL
Part Number:
TIM6472-45SL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-45SL.pdf (4 pages)
TIM6472-8UL
Part Number:
TIM6472-8UL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-8UL.pdf (4 pages)
TIM6472-16UL
Part Number:
TIM6472-16UL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-16UL.pdf (4 pages)
TIM6472-12UL
Part Number:
TIM6472-12UL
Description:
Manufacturer:
Toshiba
Datasheet:
TIM6472-12UL.pdf (4 pages)
TIM6472-25UL
Part Number:
TIM6472-25UL
Description:
Microwave Power Gaas Fet
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
TIM6472-25UL.pdf (4 pages)
TIM6472-6UL
Part Number:
TIM6472-6UL
Description:
Microwave Power Gaas Fet
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
TIM6472-6UL.pdf (4 pages)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)
MG1200V1US51
Part Number:
MG1200V1US51
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG1200V1US51.pdf (4 pages)

TIM6472-35SL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM6472-35SL HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz BROADBAND INTERNALLY MATCHED ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM6472-35SL SYMBOL ...

Page 3

... RF PERFORMANCES Output Power (Pout) vs. Frequency V =10V DS ≅8. Pin=37.5dBm Output Power(Pout) vs. Input Power(Pin) freq.=7.2GHz VDS=10V IDS=8. TIM6472-35SL 6.4 6.6 6.8 7.0 Frequency (GHz) Pout ηadd 34 36 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Power Characteristics -10 VDS=10V IDS≅8.0A freq.=7.2GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM6472-35SL 80 120 Tc( ° 200 160 38 40 ...

Related keywords