DS1225AD Dallas Semiconductor, DS1225AD Datasheet

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DS1225AD

Manufacturer Part Number
DS1225AD
Description
Manufacturer
Dallas Semiconductor
Datasheet

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FEATURES
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
www.dalsemi.com
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
Optional ±5% V
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
CC
operating range (DS1225AD)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
1 of 10
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A12
DQ0-DQ7
V
GND
NC
CE
WE
OE
CC
GND
DQ0
DQ1
DQ2
A12
28-Pin ENCAPSULATED PACKAGE
A7
A6
A5
A4
A3
A2
A1
A0
NC
64k Nonvolatile SRAM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
720-mil EXTENDED
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
28
27
26
25
24
23
22
21
20
19
18
17
16
15
DS1225AB/AD
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
111899

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DS1225AD Summary of contents

Page 1

... Optional industrial temperature range of -40°C to +85°C, designated IND DESCRIPTION The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors V for an out-of-tolerance condition. When such a condition occurs, the lithium ...

Page 2

... READ MODE The DS1225AB and DS1225AD execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 13 address inputs ( defines which of the 8192 bytes of data accessed. Valid data will available to the eight data output drivers within t stable, providing that CE and OE access times are also satisfied ...

Page 3

... IND parts -40°C to +70°C; -40°C to +85°C for IND parts 260°C for 10 seconds SYMBOL MIN TYP V 4.75 5 4. =5V ± 10% for DS1225AD) CC SYMBOL MIN TYP 5.0 CCS1 I 3.0 CCS2 ...

Page 4

... Output Active from WE Data Setup Time Data Hold Time (V (V DS1225AB-70 DS1225AD-70 SYMBOL MIN MAX ACC COE WR1 t 10 WR2 25 t ODW 5 t OEW DH1 t 10 DH2 DS1225AB/AD =5V ± 5% for DS1225AB See Note 10) A =5V ± 10% for DS1225AD) CC DS1220AB-85 DS1220AD-85 UNITS NOTES MIN MAX ...

Page 5

... Output High Z from Deselection Output Hold from Address Change Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High Z from WE Output Active from WE Data Setup Time Data Hold Time DS1225AB- 150 DS1225AD- 150 SYMBOL MIN MAX t 150 RC t 150 ACC 70 t ...

Page 6

READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES AND 12 WRITE CYCLE 2 SEE NOTES AND DS1225AB/AD ...

Page 7

POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER CE V before Power-Down slew from slew from after Power-Up IH PARAMETER Expected ...

Page 8

... low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. 9. Each DS1225AB and each DS1225AD has a built-in switch that disconnects the lithium source until V is first applied by the user. The expected t ...

Page 9

ORDERING INFORMATION DS1225AB/AD ...

Page 10

DS1225AB/AD NONVOLATILE SRAM, 28-PIN, 720-MIL EXTENDED MODULE PKG 28-PIN DIM MIN A IN. 1.520 MM 38.61 B IN. 0.695 MM 17.65 C IN. 0.395 MM 10.03 D IN. 0.100 MM 2.54 E IN. 0.017 MM 0.43 F IN. 0.120 MM ...

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