6AM12 Renesas Electronics Corporation., 6AM12 Datasheet

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6AM12

Manufacturer Part Number
6AM12
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
6AM12
Manufacturer:
HITACHI
Quantity:
5 510
Part Number:
6AM12
Manufacturer:
AD
Quantity:
5 510
Part Number:
6AM12
Manufacturer:
HITACHI/日立
Quantity:
20 000
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6AM12 Summary of contents

Page 1

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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...

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... Application www.DataSheet4U.com High speed power switching Features Low on-resistance N-channel DS(on) P-channel DS(on) Capable gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 6AM12 Array = – – ADE-208-1216 (Z) 1st. Edition Mar. 2001 ...

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... Outline SP-12TA Pch Nch 2 G www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes µs, duty cycle 2 ...

Page 5

... Test conditions — — mA — — ±100 µ — ±10 µ ± — –250 µ — –2 mA 0.15 0 0.20 0. 6.0 — 900 — 460 — MHz 130 — — — 7.5 L 170 — — ns –1.05 — 180 — dIF/ A/µs 6AM12 = ...

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... Maximum Channel Dissipation Curve 6 Condition : Channel dissipation of each die is identical www.DataSheet4U.com Ambient Temperature Ta (°C) Maximum Safe Operation Area (P-Channel) – 50 – 30 – 10 – 3 – 1 Operation in this area is limited by R – 0 25°C – 0.1 – 0.05 – 0.1 – 0.3 – ...

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... A D –1.2 –0.8 –0.4 0 –2 –4 –6 Gate to Source Voltage V GS Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0 – 0 – 0.2 0 – – Case Temperature T C 6AM12 –5 A –2 A –8 –10 (V) –5 A –2 A –10 A –5 A –2 A 120 160 (°C) ...

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... Forward Transfer Admittance vs. Drain Current Pulse Test 1.0 0.5 –0.1 –0.2 –0.5 Drain Current I www.DataSheet4U.com Typical Capacitance vs. Drain to Source Voltage 10,000 1,000 100 10 0 –10 –20 Drain to Source Voltage V –25° 25°C C 75°C –1.0 –2 –5 –10 ( MHz Ciss ...

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... duty < (on) 5 –0.2 –0.5 –1.0 www.DataSheet4U.com Drain Current I = – 30V DD –2 –5 –10 –20 (A) D Reverse Drain Current vs. Source to Drain Voltage –20 Pulse Test –16 –12 –8 –10 V –5 V – –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V SD 6AM12 –2.0 (V) ...

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... Maximum Safe Operation Area (N-Channel Operation in this area 0.3 is limited 25°C 0.1 0.05 www.DataSheet4U.com 0.1 0.3 1 Drain to Source Voltage V Typical Transfer Characteristics Pulse Test 75° 1.0 2 Gate to Source Voltage V (on 100 (V) DS –25° 25° (V) GS Typical Output Characteristics Pulse Test ...

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... D Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0 0 0.2 0 – 120 Case Temperature T (°C) C Body to Drain Diode Reverse Recovery Time 500 di/ 25° Pulse Test 200 100 0.5 1 Reverse Drain Current I DR 6AM12 160 50 (A) ...

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... Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 Drain to Source Voltage V www.DataSheet4U.com Switching Characteristics 500 200 100 duty < 0.1 0.2 0.5 Drain Current =1MHz Ciss Coss Crss ( (off • • (on) 1 (A) D Dynamic Input Characteristics 100 Gate Charge Qg (nc) Reverse Drain Current vs ...

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... Package Dimensions www.DataSheet4U.com 3.2 2. +0.2 31.3 –0.3 24.4 0.1 16.4 0.3 3.8 1.4 0.85 0 January, 2001 5.0 0.2 2.0 0.1 2.2 0.2 +0.1 0.55 –0.06 Hitachi Code SP-12TA JEDEC — EIAJ — Mass (reference value) 6.1 g 6AM12 Unit: mm ...

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... Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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