M28W800CB90N1 STMicroelectronics, M28W800CB90N1 Datasheet
M28W800CB90N1
Related parts for M28W800CB90N1
M28W800CB90N1 Summary of contents
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FEATURES SUMMARY SUPPLY VOLTAGE – 2.7V to 3.6V Core Power Supply DD – 1.65V to 3.6V for Input/Output DDQ – 12V for fast Program (optional) PP ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME: – ...
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M28W800CT, M28W800CB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Table 3. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M28W800CT, M28W800CB Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Outline . . . . . . . . 29 Table 19. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package ...
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SUMMARY DESCRIPTION The M28W800C Mbit (512Kbit x 16) non-vol- atile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...
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M28W800CT, M28W800CB Figure 3. TSOP Connections 6/49 A15 1 48 A14 A13 A12 A11 A10 M28W800CT M28W800CB A18 A17 ...
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Figure 4. TFBGA Connections (Top view through package A13 B A14 C A15 D A16 E V DDQ A11 A10 W RP A18 A12 A9 DQ11 DQ2 ...
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M28W800CT, M28W800CB Figure 5. Block Addresses M28W800CT Top Boot Block Addresses 7FFFF 4 KWords 7F000 78FFF 4 KWords 78000 77FFF 32 KWords 70000 0FFFF 32 KWords 08000 07FFF 32 KWords 00000 Note: Also see Appendix A, Tables 24 and 25 ...
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SIGNAL DESCRIPTIONS See Figure 2 Logic Diagram and Table 1,Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access dur- ing ...
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M28W800CT, M28W800CB BUS OPERATIONS There are six standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby, Automatic Standby and Re- set. See Table 2, Bus Operations, for a summary. Typically glitches of ...
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COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. An internal Program/Erase Controller han- dles all timings and verifies the correct execution ...
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M28W800CT, M28W800CB memory location must be erased and repro- grammed. See Appendix C, Figure 17, Program Flowchart and Pseudo Code, for the flowchart for using the Program command. Double Word Program Command This feature is offered to improve the programming ...
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Register and/or the Security Block is not revers- ible. The Protection Register Program cannot be sus- pended. See Appendix C, Figure 23, Protection Register Program Flowchart and Pseudo Code, for the flowchart for using the Protection Register Program command. Block ...
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M28W800CT, M28W800CB Table 3. Commands No. of Commands Cycles Read Memory Array 1+ Read Status Register 1+ Read Electronic Signature 1+ Read CFI Query 1+ Erase 2 Program 2 (3) 3 Double Word Program Clear Status Register 1 Program/Erase Suspend ...
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Table 5. Read Block Lock Signature Block Status E G Locked Block Unlocked Block IL IL Locked-Down Block Note Locked-Down Block can be locked "DQ0 = 1" or ...
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M28W800CT, M28W800CB BLOCK LOCKING The M28W800C features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency. This locking scheme has three levels of protection. Lock/Unlock - this first level allows software- ...
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Table 8. Block Lock Status Item Block Lock Configuration Block is Unlocked Block is Locked Block is Locked-Down Table 9. Protection Status Current (1) Protection Status (WP, DQ1, DQ0) Program/Erase Current State Allowed 1,0,0 yes (2) no 1,0,1 1,1,0 yes ...
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M28W800CT, M28W800CB STATUS REGISTER The Status Register provides information on the current or previous Program or Erase operation. The various bits convey information and errors on the operation. To read the Status register the Read Status Register command can be ...
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Controller Status bit is High (Program/ Erase Controller inactive). Bit 2 is set within 5µs of the Program/Erase Suspend command being is- sued therefore the memory may still complete the operation rather than entering the Suspend mode. When a ...
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... Supply Voltage DD DDQ V Program Voltage PP Note: 1. Depends on range. 20/49 plied. Exposure to Absolute Maximum Rating con- ditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1) Value Unit Min Max – – ...
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DC AND AC PARAMETERS This section summarizes the operating and mea- surement conditions, and the DC and AC charac- teristics of the device. The parameters in the DC and AC characteristics Tables that follow, are de- rived from tests performed ...
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M28W800CT, M28W800CB Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) DD Supply Current (Stand- DD1 Automatic Stand-by) Supply Current I DD2 (Reset) I Supply Current (Program) ...
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Figure 9. Read Mode AC Waveforms A0-A18 E G DQ0-DQ15 ADDR. VALID CHIP ENABLE Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...
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M28W800CT, M28W800CB Figure 10. Write AC Waveforms, Write Enable Controlled 24/49 ...
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Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Write Enable High AVWH Data Valid to Write Enable High DVWH Chip ...
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M28W800CT, M28W800CB Figure 11. Write AC Waveforms, Chip Enable Controlled 26/49 ...
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Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Chip Enable High AVEH Data Valid to Chip Enable High DVEH Chip ...
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M28W800CT, M28W800CB Figure 12. Power-Up and Reset AC Waveforms tVDHPH VDD, VDDQ Table 18. Power-Up and Reset AC Characteristics Symbol Parameter t PHWL Reset High to Write Enable Low, Chip t PHEL Enable Low, Output Enable ...
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PACKAGE MECHANICAL Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Outline 1 N/2 TSOP-a Note: Drawing is not to scale. Table 19. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package ...
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M28W800CT, M28W800CB Figure 14. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline BALL "A1" A Note: Drawing is not to scale. Table 20. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package ...
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Figure 15. TFBGA46 Daisy Chain - Package Connections (Top view through package Figure 16. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package ...
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M28W800CT, M28W800CB PART NUMBERING Table 21. Ordering Information Scheme Example: Device Type M28 Operating Voltage 2.7V to 3.6V 1.65V to 3.6V DD DDQ Device Function 800C = 8 Mbit (512Kb x16), Boot Block Array ...
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REVISION HISTORY Table 23. Document Revision History Date Version January 2001 -01 10-May-2001 -02 29-May-2001 -03 31-May-2001 -04 02-Jul-2001 -05 31-Oct-2001 -06 16-May-2002 -07 Revision Details First Issue Completely rewritten and restructured, 70ns and 85ns speed class added. Corrections to ...
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M28W800CT, M28W800CB APPENDIX A. BLOCK ADDRESS TABLES Table 24. Top Boot Block Addresses, M28W800CT Size # Address Range (KWord 7F000-7FFFF 1 4 7E000-7EFFF 2 4 7D000-7DFFF 3 4 7C000-7CFFF 4 4 7B000-7BFFF 5 4 7A000-7AFFF 6 4 79000-79FFF ...
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APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical ...
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M28W800CT, M28W800CB Table 28. CFI Query System Interface Information Offset Data V Logic Supply Minimum Program/Erase or Write voltage DD 1Bh 0027h V Logic Supply Maximum Program/Erase or Write voltage DD 1Ch 0036h V [Programming] Supply Minimum Program/Erase voltage PP ...
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Table 29. Device Geometry Definition Offset Word Data Mode 27h 0014h Device Size = 2 28h 0001h Flash Device Interface Code description 29h 0000h 2Ah 0002h Maximum number of bytes in multi-byte program or page = 2 2Bh 0000h Number ...
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M28W800CT, M28W800CB Table 30. Primary Algorithm-Specific Extended Query Table Offset Data ( 35h (P+0)h = 35h 0050h (P+1)h = 36h 0052h Primary Algorithm extended Query table unique ASCII string “PRI” (P+2)h = 37h 0049h (P+3)h = 38h 0031h ...
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Table 31. Security Code Area Offset Data 80h 00XX Protection Register Lock 81h XXXX 82h XXXX 64 bits: unique device number 83h XXXX 84h XXXX 85h XXXX 86h XXXX 64 bits: User Programmable OTP 87h XXXX 88h XXXX M28W800CT, M28W800CB ...
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M28W800CT, M28W800CB APPENDIX C. FLOWCHARTS AND PSEUDO CODES Figure 17. Program Flowchart and Pseudo Code Start Write 40h or 10h Write Address & Data Read Status Register YES YES ...
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Figure 18. Double Word Program Flowchart and Pseudo Code Start Write 30h Write Address 1 & Data 1 (3) Write Address 2 & Data 2 (3) Read Status Register YES YES NO ...
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M28W800CT, M28W800CB Figure 19. Program Suspend & Resume Flowchart and Pseudo Code Start Write B0h Write 70h Read Status Register YES YES Write FFh Read data from another address Write D0h Program Continues 42/49 ...
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Figure 20. Erase Flowchart and Pseudo Code Start Write 20h Write Block Address & D0h Read Status Register YES YES YES b4 YES NO ...
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M28W800CT, M28W800CB Figure 21. Erase Suspend & Resume Flowchart and Pseudo Code Start Write B0h Write 70h Read Status Register YES YES Write FFh Read data from another block or Program/Protection Program or Block ...
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Figure 22. Locking Operations Flowchart and Pseudo Code Start Write 60h Write 01h, D0h or 2Fh Write 90h Read Block Lock States Locking change confirmed? YES Write FFh End locking_operation_command (address, lock_operation) { writeToFlash (any_address, 0x60) ; /*configuration setup*/ if ...
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M28W800CT, M28W800CB Figure 23. Protection Register Program Flowchart and Pseudo Code Start Write C0h Write Address & Data Read Status Register YES YES YES NO Program to Protected ...
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APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE Table 32. Write State Machine Current/Next, sheet Data Current SR Read When State bit 7 Array Read (FFh) Read Array “1” Array Read Array Prog.Setup Read “1” Status Read ...
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M28W800CT, M28W800CB Table 33. Write State Machine Current/Next, sheet Current State Read Elect.Sg. (90h) Read Array Read Elect.Sg. Read CFI Query Read Status Read Elect.Sg. Read CFI Query Read Elect.Sg. Read Elect.Sg. Read CFI Query Read CFI ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...