HM6216255HLJP-15 Renesas Electronics Corporation., HM6216255HLJP-15 Datasheet

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HM6216255HLJP-15

Manufacturer Part Number
HM6216255HLJP-15
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
HM6216255HLJP-15
Manufacturer:
HIT
Quantity:
6 250
Part Number:
HM6216255HLJP-15
Manufacturer:
HITACHI
Quantity:
6 250
Part Number:
HM6216255HLJP-15
Manufacturer:
SEEQ
Quantity:
2 730
Description
The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V 10 %
Access time: 10/12/15 ns (max)
Completely static memory
Equal access and cycle times
Directly TTL compatible
Operating current: 200/180/160 mA (max)
TTL standby current: 70/60/50 mA (max)
CMOS standby current: 5 mA (max)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center V
No clock or timing strobe required
All inputs and outputs
CC
and V
4M high Speed SRAM (256-kword
SS
type pinout
: 1.2 mA (max) (L-version)
HM6216255H Series
16-bit)
ADE-203-763D (Z)
16-bit. It has realized
Sep. 15, 1998
Rev. 1.0

Related parts for HM6216255HLJP-15

HM6216255HLJP-15 Summary of contents

Page 1

HM6216255H Series 4M high Speed SRAM (256-kword Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing ...

Page 2

... HM6216255H Series Ordering Information Type No. HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 HM6216255HTT-10 HM6216255HTT-12 HM6216255HTT-15 HM6216255HLTT-10 HM6216255HLTT-12 HM6216255HLTT-15 Pin Arrangement HM6216255HJP/HLJP Series (Top View) 2 Access time Package 10 ns 400-mil 44-pin plastic SOJ (CP-44D 400-mil 44-pin plastic TSOPII (TTP-44DE) ...

Page 3

Pin Description Pin name Function A0 to A17 Address input I/O1 to I/O16 Data input/output CS Chip select OE Output enable WE Write enable Block Diagram (LSB) A1 A17 A7 A11 Row A16 decoder (MSB) CS I/O1 ...

Page 4

HM6216255H Series Operation Table Mode H Standby Output disable Read Lower byte read Upper byte read ...

Page 5

Recommended DC Operating Conditions ( +70 C) Parameter Symbol Supply voltage V V Input voltage V V Notes (min) = –2.0 V for pulse width (under shoot (max 2.0 ...

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HM6216255H Series Capacitance ( 1.0 MHz) Parameter Symbol 1 Input capacitance* Cin 1 Input/output capacitance* C I/O Note: 1. This parameter is sampled and not 100% tested. 6 Min Typ Max Unit — — 6 ...

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AC Characteristics ( + Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference levels: 1.5 V Output load: See figures (Including scope and jig) ...

Page 8

HM6216255H Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Byte select to end of write Address setup time Write recovery time Data to write time overlap ...

Page 9

Timing Waveforms Read Timing Waveform (1) ( Address High Impedance Dout (Lower byte) High Impedance Dout (Upper byte Valid address ACS ...

Page 10

HM6216255H Series Read Timing Waveform (2) ( Address CS OE High Impedance Dout (Lower/Upper byte UB Valid address ACS t OE ...

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Write Timing Waveform (1) (LB, UB Controlled) Address t AS WE Dout (Lower byte) Dout (Upper byte) Din (Lower byte) Din (Upper byte Valid address ...

Page 12

HM6216255H Series Write Timing Waveform (2) (WE Controlled) Address WE* CS LB, UB Dout (Lower/Upper byte) Din (Lower/Upper byte Valid address UBW LBW t ...

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Write Timing Waveform (3) (CS Controlled) Address LB, UB Dout (Lower/Upper byte) Din (Lower/Upper byte Valid address LBW UBW t WHZ ...

Page 14

HM6216255H Series Low V Data Retention Characteristics ( + This characteristics is guaranteed only for L-version. Parameter V for data retention CC Data retention current Chip deselect to data retention time Operation recovery time Note: ...

Page 15

Package Dimensions HM6216255HJP/HLJP Series (CP-44D) 28.33 28.90 Max 44 1 0.74 1.30 Max 0.43 0.10 0.41 0.08 Dimension including the plating thickness Base material dimension 23 22 1.27 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) HM6216255H Series Unit: mm ...

Page 16

HM6216255H Series HM6216255HTT/HLTT Series (TTP-44DE) 18.41 18.81 Max 44 1 0.80 0.27 0.07 0.13 M 0.25 0.05 1.005 Max 0.10 Dimension including the plating thickness Base material dimension 11.76 0.20 0 – 5 Hitachi Code JEDEC EIAJ ...

Page 17

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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