UPA1550H Renesas Electronics Corporation., UPA1550H Datasheet

UPA1550H

Manufacturer Part Number

UPA1550H

Description

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1550H.pdf (6 pages)

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Document No. G16142EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

switching device is available for direct drive by output of 5 V power

supply IC.

characteristic, and is ideal for control of devices such as mortars,

solenoid, or ramp.

FEATURES

• Gate drive available at logic level (V

• High current capacity and low on-resistnace

• Easy to mount the printing board due to 2.54 mm (0.1 inch) interval

• Small dimension and no electrode exposure except lead pins

ORDERING INFORMATION

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know the

specification of quality grade on the devices and its recommended

applications.

µ PA1550 is a N-channel vertical power MOS FET and this

This device features low on-resistance and excellent switching

of lead pins

enable the high density mounting.

D(pulse)

Part Number

DS(on)

µ PA1550H

= ±20 A

= 0.09 Ω TYP. @V

= 0.11 Ω TYP. @V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10-pin SIP

Package

N-CHANNEL POWER MOS FET ARRAY

= 10 V

= 4 V

COMPOUND FIELD EFFECT TRANSISTOR ARRAY

= 4 V)

Standard

Quality

FOR SWITCHING

DATA SHEET

PACKAGE DRAWING (UNIT: mm)

ELECTRODE CONNECTION

INTERNAL EQUIVALENT

CIRCUIT

µ µ µ µ PA1550

2, 4, 6, 8 : Gate (G)

3, 5, 7, 9 : Drain (D)

1, 10 : Source (S)

1998

2002

Related parts for UPA1550H

UPA1550H Summary of contents

Page 1

N-CHANNEL POWER MOS FET ARRAY µ PA1550 is a N-channel vertical power MOS FET and this switching device is available for direct drive by output power supply IC. This device features low on-resistance and excellent switching characteristic, ...

Page 2

ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C) Parameter Symbol Drain to source voltage V V DSS Gate to source voltage V V GSS Drain current (DC D(DC) PW ≤ 10 µ s Drain current ...

Page 3

TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) Data Sheet G16142EJ1V0DS µ µ µ µ PA1550 3 ...

Page 4

Data Sheet G16142EJ1V0DS µ µ µ µ PA1550 ...

Page 5

Data Sheet G16142EJ1V0DS µ µ µ µ PA1550 5 ...

Page 6

The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

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