N28F010-120 Intel Corporation, N28F010-120 Datasheet
N28F010-120
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N28F010-120 Summary of contents
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... Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata COPYRIGHT INTEL CORPORATION 1995 28F010 Command Register Architecture for ...
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Figure 1 28F010 Block Diagram Symbol Type A – A INPUT ADDRESS INPUTS for memory addresses Addresses are internally 0 16 latched during a write cycle DQ – DQ INPUT OUTPUT DATA INPUT OUTPUT Inputs data during memory write ...
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Figure 2 28F010 Pin Configurations 28F010 290207 – 3 290207 – 17 290207 – ...
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APPLICATIONS The 28F010 flash memory provides nonvolatility along with the capability to perform over 100 000 electrical chip-erasure reprogram cycles These fea- tures make the 28F010 an innovative alternative to disk EEPROM and battery-backed static RAM Where periodic updates ...
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Figure 3 TSOP Serpentine Layout 28F010 5 ...
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Figure 4 28F010 in a 80C186 System PRINCIPLES OF OPERATION Flash-memory augments EPROM functionality with in-circuit electrical erasure and reprogramming The 28F010 introduces a command register to manage this new functionality The command register allows for 100% TTL-level control ...
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Table 2 28F010 Bus Operations Mode Read Output Disable Standby READ-ONLY Intelligent Identifier (Mfr) Intelligent Identifier (Device) Read Output Disable READ WRITE (5) Standby Write NOTES e 1 Refer to DC Characteristics When Manufacturer and device codes ...
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With CE and logic low level raising A9 to high voltage V (see DC Characteristics) acti- ID vates the operation Data read from locations 0000H and 0001H represent the manufacturer’s code and the device code respectively ...
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Read Command While V is high for erasure and programming PP memory contents can be accessed via the read command The read operation is initiated by writing 00H into the command register Microprocessor read cycles retrieve array data The device ...
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Program-Verify Command The 28F010 is programmed on a byte-by-byte basis Byte programming may occur sequentially or at ran- dom Following each programming operation the byte just programmed must be verified The program-verify operation is initiated by writing C0H into ...
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NOTES 1 See DC Characteristics for the value PPL 2 Program Verify is only performed after byte program- ming A final read compare may be performed (option- al) after the register is written with the Read command ...
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See DC Characteristics for the value PPL 2 Erase Verify is performed only after chip-erasure A final read compare may be performed (optional) after the register is written with the read command Figure 6 28F010 ...
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DESIGN CONSIDERATIONS Two-Line Output Control Flash-memories are often used in larger memory ar- rays Intel provides two read-control inputs to ac- commodate multiple memory connections Two-line control provides for a the lowest possible memory power dissipation and b complete assurance ...
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ABSOLUTE MAXIMUM RATINGS Operating Temperature During Read During Erase Program Operating Temperature b During Read During Erase Program Temperature Under Bias ...
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DC CHARACTERISTICS TTL NMOS COMPATIBLE Commercial Products (Continued) Symbol Parameter I V Programming Current CC2 Erase Current CC3 Program Verify Current CC4 Erase Verify Current CC5 Leakage Current ...
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DC CHARACTERISTICS CMOS COMPATIBLE Commercial Products Symbol Parameter Notes I V Programming Current 1 2 CC2 Erase Current 1 2 CC3 Program Verify Current 1 2 CC4 Erase Verify Current ...
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DC CHARACTERISTICS TTL NMOS COMPATIBLE Extended Temperature Products Symbol Parameter I Input Leakage Current LI I Output Leakage Current Standby Current CCS Active Read Current CC1 Programming Current CC2 CC I ...
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DC CHARACTERISTICS CMOS COMPATIBLE Extended Temperature Products Symbol Parameter Notes I Input Leakage 1 LI Current I Output Leakage 1 LO Current I V Standby 1 CCS CC Current I V Active Read 1 CC1 CC Current I V ...
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DC CHARACTERISTICS CMOS COMPATIBLE Extended Temperature Products (Continued) Symbol Parameter Notes V V during Read-Only PPL PP Operations V V during Read Write PPH PP Operations V V Erase Write Lock LKO CC Voltage e e CAPACITANCE ...
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AC TESTING INPUT OUTPUT (1) WAVEFORM AC test inputs are driven TTL ‘‘1’’ and for a Logic ‘‘0’’ Input timing OL TTL begins ...
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AC CHARACTERISTICS Read Only Operations Commercial and Extended Temperature Products 28F010 21 ...
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Figure 7 AC Waveforms for Read Operations 22 ...
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AC CHARACTERISTICS Write Erase Program Only Operations Commercial and Extended Temperature Products 28F010 (1) 23 ...
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Figure 8 Typical Programming Capability Figure 9 Typical Program Time at 12V 24 290207 – 13 Figure 10 Typical Erase Capability 290207 – 14 Figure 11 Typical Erase Time at 12V 290207 – 15 290207 – 16 ...
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Figure 12 AC Waveforms for Programming Operations 28F010 25 ...
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Figure 13 AC Waveforms for Erase Operations 26 ...
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AC CHARACTERISTICS Alternative CE -Controlled Writes Commercial and Extended Temperature 28F010 27 ...
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ERASE AND PROGRAMMING PERFORMANCE Parameter Notes Chip Erase Time Chip Program Time NOTES 1 ‘‘Typicals’’ are not guaranteed but based on samples from production lots Data taken ...
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NOTE Alternative CE -Controlled Write Timings also apply to erase operations Figure 14 Alternate AC Waveforms for Programming Operations 28F010 29 ...
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... Added 28F010-65 and 28F010-90 speeds Revised Symbols etc to CE 010 Completion of Read Operation Table Labelling of Program Time in Erase Program Table Textual Changes or Edits Corrected Erase Program Times 30 N28F010-65 TN28F010-90 N28F010-90 N28F010-120 N28F010-150 F28F010-65 TE28F010-90 F28F010-90 TF28F010-90 F28F010-120 F28F010-150 Description OE etc 290207 – ...