R1LV0416CSB-5SI Renesas Electronics Corporation., R1LV0416CSB-5SI Datasheet
R1LV0416CSB-5SI
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R1LV0416CSB-5SI Summary of contents
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R1LV0416C-I Series Wide Temperature Range Version 4M SRAM (256-kword × 16-bit) Description The R1LV0416C 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology ...
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... R1LV0416C-I Series Ordering Information Type No. Access time R1LV0416CSB-5SI 55 ns R1LV0416CSB-7LI 70 ns Rev.2.00, May.26.2004, page Package 400-mil 44-pin plastic TSOP II (44P3W-H) ...
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R1LV0416C-I Series Pin Arrangement Pin Description Pin name Function A0 to A17 Address input I/O0 to I/O15 Data input/output CS1# (CS1) Chip select 1 CS2 Chip select 2 OE# (OE) Output enable WE# (WE) Write enable LB# (LB) Lower byte ...
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R1LV0416C-I Series Block Diagram LSB A12 A11 A10 A9 A8 A13 A14 A15 A16 A17 MSB A7 I/O0 I/O15 CS2 CS1# LB# UB# WE# OE# Rev.2.00, May.26.2004, page • • • Memory matrix Row • • 2,048 ...
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R1LV0416C-I Series Operation Table CS1# CS2 WE# OE# UB# × × × × H × × × × L × × × × × ...
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R1LV0416C-I Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5SI Standby current to +85°C to +70°C to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C Output high ...
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R1LV0416C-I Series Capacitance (Ta = +25° 1.0 MHz) Parameter Input capacitance Input/output capacitance Note: 1. This parameter is sampled and not 100% tested. AC Characteristics (Ta = −40 to +85° 2 3.6 V, unless ...
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R1LV0416C-I Series Read Cycle Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB#, UB# access time Chip select to output in low-Z LB#, UB# disable to low-Z ...
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R1LV0416C-I Series Write Cycle Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB#, UB# valid to end of write Address setup time Write recovery time Data to write time ...
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R1LV0416C-I Series Timing Waveform Read Timing Waveform (WE Address CS1# CS2 LB#, UB# OE# High impedance Dout Rev.2.00, May.26.2004, page Valid address ACS1 CLZ1 ...
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R1LV0416C-I Series Write Timing Waveform (1) (WE# Clock) Address CS1# CS2 LB#, UB Din Dout Rev.2.00, May.26.2004, page Valid address ...
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R1LV0416C-I Series Write Timing Waveform (2) (CS# Clock, OE Address CS1# CS2 LB#, UB# WE# Din Dout Rev.2.00, May.26.2004, page Valid address ...
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R1LV0416C-I Series Write Timing Waveform (3) (LB#, UB# Clock, OE Address CS1# CS2 LB#, UB# WE# Din Dout Rev.2.00, May.26.2004, page Valid address ...
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R1LV0416C-I Series Low V Data Retention Characteristics CC (Ta = −40 to +85°C) Parameter V for data retention CC −5SI Data to +85°C retention to +70°C current to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C ...
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R1LV0416C-I Series Low V Data Retention Timing Waveform (1) (CS1# Controlled CDR 2.0 V CS1 Low V Data Retention Timing Waveform (2) (CS1# Controlled CDR V ...
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R1LV0416C-I Series Low V Data Retention Timing Waveform (4) (CS2 Controlled CDR V CC 2.7 V CS2 Low V Data Retention Timing Waveform (5) (LB#, UB# Controlled CDR ...
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Revision History Rev. Date Contents of Modification Page Description 1.00 Aug.05.2003 Initial issue 2.00 May.26.2004 5 Absolute Maximum Ratings Notes characteristics −5SI and −7LI items’ description are divided ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...