SI6943DQ-T1 Vishay Semiconductors, SI6943DQ-T1 Datasheet
SI6943DQ-T1
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SI6943DQ-T1 Summary of contents
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... S-49534—Rev. E, 06-Oct-97 I (A) D "2.5 "1 P-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED 25_C 70_C 25_C 70_C A Si6943DQ Vishay Siliconix S D Symbol Limit " "2 "2.0 " " 1 0.64 T ...
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... Si6943DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance ...
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... Q - Total Gate Charge (nC) g Document Number: 70176 S-49534—Rev. E, 06-Oct- 1500 1200 900 V = 4.5 V 600 GS 300 8 10 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 Si6943DQ Vishay Siliconix Transfer Characteristics 25_C T = 125_C C - 55_C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss ...
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... Si6943DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0.5 = 250 µ 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...