M5M29GT320VP-80 Renesas Electronics Corporation., M5M29GT320VP-80 Datasheet
M5M29GT320VP-80
Manufacturer Part Number
M5M29GT320VP-80
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.M5M29GT320VP-80.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M5M29GT320VP-80
Manufacturer:
MITSUBISHI
Quantity:
20 000
PIN CONFIGURATION (TOP VIEW)
1
DESCRIPTION
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO
(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while
the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal
computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and
DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .
FEATURES
Organization
Supply voltage
Access time
Power Dissipation
Deep power down mode
Auto program for Bank(I) and Bank(II)
Auto program for Bank(III) and Bank(IV)
Auto Erase
Program/Erase cycles
Program Time
Program Unit
Program Time
Program Unit
Erase time
Erase Unit
Read
(After Automatic Power saving)
Program/Erase
Standby
Bank(I)
Bank(II)
Bank(III) Main Block
Bank(IV) Main Block
(Byte Program)
(Page Program)
Boot Block
Main Block
Parameter Block
Main Block
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33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
RY/BY#
Outline 48pin TSOP type-I (12 X 20mm)
4,194,304 word x 8 bit
2,097,152 word x 16bit
V
80ns (Vcc=3.0~3.6V)
1word/1byte
128word/256byte
4ms (typ.)
4ms (typ.)
90ns (Vcc=2.7~3.6V)
0.33W (typ.)
32Kword/64Kbyte x 8
32Kword/64Kbyte x 24
126mW (Max.)
0.33W (typ.)
128word/256byte
40 ms (typ.)
320VP
WE#
WP#
0.33W (typ.)
32Kword/64Kbyte x 7
32Kword/64Kbyte x 24
RP#
CC
72 mW (Max. at 5MHz)
4Kword/8Kbyte x 6
A
A
A
A
A
A
A
NC
A
A
4Kword/8Kbyte x 2
A
A
A
A
A
A
A
A
A
A
15
14
13
12
11
10
19
20
18
17
9
8
7
6
5
4
3
2
1
= 2.7 ~ 3.6V
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
5
6
7
8
9
100Kcycles
VP(Normal bend)
M5M29GB/T
320VP
M5M29GB/T320VP-80
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
APPLICATION
Boot Block
Other Functions
Package
Code Strage
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
320VP
48-Lead, 12mm x 20mm TSOP (type-I)
A
GND
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
V
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
BYTE#
M5M29GB320VP
M5M29GT320VP
Soft Ware Command Control
Selective Block Lock
Status Register Read
Alternating Back Ground Program/Erase Operation
16
CC
0
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)
/A-1
NC : NO CONNECTION
........................
........................
Renesas LSIs
Top Boot
Bottom Boot
Rev3.0_48a_bazz
48P3E-C
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M5M29GT320VP-80 Summary of contents
Page 1
... Program/Erase cycles PIN CONFIGURATION (TOP VIEW) 1 M5M29GB/T320VP-80 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY Boot Block 2,097,152 word x 16bit M5M29GB320VP M5M29GT320VP 4,194,304 word x 8 bit Other Functions V = 2.7 ~ 3.6V Soft Ware Command Control CC Selective Block Lock 80ns (Vcc=3.0~3.6V) Status Register Read 90ns (Vcc=2 ...
Page 2
BY 8-BIT / 2,097,152-WORD BY16-BIT) BLOCK DIAGRAM ADDRESS INPUTS ...
Page 3
BY 8-BIT / 2,097,152-WORD BY16-BIT) Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that ...