SI7442DP Vishay Semiconductors, SI7442DP Datasheet

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SI7442DP

Manufacturer Part Number
SI7442DP
Description
Manufacturer
Vishay Semiconductors
Datasheet
Notes
a.
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
i
30
30
(V)
J
8
ti
Ordering Information: Si7442DP-T1
6.15 mm
D
t A bi
7
D
0.0035 @ V
0.0026 @ V
6
D
J
J
a
a
r
PowerPAK SO-8
DS(on)
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
GS
GS
(W)
a
a
= 4.5 V
= 10 V
1
S
N-Channel 30-V (D-S) MOSFET
2
S
a
3
S
5.15 mm
4
G
A
I
D
29
25
= 25_C UNLESS OTHERWISE NOTED)
(A)
Steady State
Steady State
L= 0 1 mH
L= 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D New Low Thermal Resistance PowerPAKr Package with
D 100% R
APPLICATIONS
D DC/DC Converters
D Secondary Synchronous Rectifier
D Load Switch
Symbol
Symbol
Low 1.07-mm Profile
-
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
D
D
Low-Side MOSFET in Synchronous Buck in Desktops
stg
g
Tested
G
10 secs
Typical
N-Channel MOSFET
4.5
5.4
3.4
1.0
29
25
18
50
-55 to 150
D
S
"12
245
30
60
70
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
1.5
18
14
23
65
Si7442DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1

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SI7442DP Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7442DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7442DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71979 S-31728—Rev. B, 18-Aug- 100 T = 25_C J 0.8 1.0 1.2 Si7442DP Vishay Siliconix Capacitance 15000 C iss 12000 9000 6000 C 3000 oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1.6 ...

Page 4

... Si7442DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0.1 = 250 -0.1 -0.3 -0.5 -0.7 -0.9 -50 - Temperature (_C) J Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 200 160 120 100 125 150 Safe Operating Area ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Document Number: 71979 S-31728—Rev. B, 18-Aug- Square Wave Pulse Duration (sec) Si7442DP Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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