LH28F004SUT-LC12 Sharp, LH28F004SUT-LC12 Datasheet

no-image

LH28F004SUT-LC12

Manufacturer Part Number
LH28F004SUT-LC12
Description
4M (512K x 8) flash memory
Manufacturer
Sharp
Datasheet
LH28F004SU-LC
FEATURES
512K × 8 Word Configuration
5 V Write/Erase Operation
(5 V V
– No Requirement for DC/DC Converter to
120 ns Maximum Access Time
(V
Min. 2.7 V Read Capability
– 160 ns Maximum Access Time
32 Independently Lockable Blocks
100,000 Erase Cycles per Block
Automated Byte Write/Block Erase
– Command User Inferface
– Status Register
– RY
System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during
– Software Erase/Write Lockout
Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
4 µA (Typ.) I
0.2 µA (Typ.) Deep Power-Down
State-of-the-Art 0.55 µm ETOX™ Flash
Technology
Extended Temperature Operation Available
– -40°C to +85°C
40-Pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package
Write/Erase
CC
(V
Power Transitions
CC
    »
/ BY
= 3.3 V ± 0.3 V)
PP
= 2.7 V)
, 3.3 V V
    »
Status Output
CC
in CMOS Standby
CC
)
40-PIN TSOP
RY/BY
WE
V
A
A
A
A
A
A
A
RP
A
A
A
A
A
A
A
A
PP
A
16
15
14
13
12
18
11
9
8
7
6
5
4
3
2
1
Figure 1. TSOP Configuration
10
12
13
14
15
16
17
18
19
20
11
2
3
4
5
6
7
8
9
1
4M (512K × 8) Flash Memory
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
28F004SUT-LC12-1
TOP VIEW
DQ
A
GND
NC
NC
A
DQ
DQ
DQ
DQ
V
V
NC
DQ
DQ
DQ
A
OE
GND
CE
17
10
CC
CC
0
7
6
5
4
3
2
1
0
1

Related parts for LH28F004SUT-LC12

LH28F004SUT-LC12 Summary of contents

Page 1

LH28F004SU-LC FEATURES • 512K × 8 Word Configuration • Write/Erase Operation ( 3 – No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (V = 3.3 ...

Page 2

LH28F004SU-LC OUTPUT MULTIPLEXER INPUT BUFFER Y-DECODER ADDRESS X-DECODER QUEUE LATCHES ADDRESS COUNTER Figure 2. LH28F004SU-LC Block Diagram OUTPUT BUFFER DATA ID QUEUE REGISTER REGISTERS CSR REGISTER ESRs DATA COMPARATOR ...

Page 3

Flash Memory PIN DESCRIPTION SYMBOL TYPE WORD-SELECT ADDRESSES: Select a word within one 16K block. These INPUT 0 13 addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select Erase blocks. ...

Page 4

... The flexible block locking option enables bundling of executable application software in a Resident Flash Array or memory card. Manufactured on Sharp’s 0.55 µm ETOX™ process technology, the LH28F004SU-LC is the most cost-effective, high- density 3.3 V flash memory. DESCRIPTION ...

Page 5

Flash Memory When the device power- Protect Set/Confirm command must be written. Other- wise, all lock bits in the device remain being locked, can’t perform the Write to each block and single Block Erase. ...

Page 6

LH28F004SU-LC BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS Bus Operations MODE RP » CE » Read Output Disable Standby Deep Power-Down Manufacturer ...

Page 7

Flash Memory LH28F008SA-Compatible Mode Command Bus Definitions COMMAND Read Array Intelligent Identifier Read Compatible Status Register Clear Status Register Word Write Alternate Word Write Block Erase/Confirm Erase Suspend/Resume ADDRESS DATA AA = Array Address AD = ...

Page 8

... Write/Erase operation to each block. There are unassigned commands not recom- mended that the customer use any command other than the valid commands specified in “Command Bus Defi- nitions”. Sharp reserved the right to redefine these codes for future functions. 4M (512K × 8) Flash Memory R ...

Page 9

Flash Memory START WRITE 40H or 10H WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 DATA ...

Page 10

LH28F004SU-LC START WRITE 20H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ERASE CSR.4, ...

Page 11

Flash Memory START WRITE B0H READ COMPATIBLE STATUS REGISTER 0 CSR CSR.6 = ERASE COMPLETED 1 WRITE FFH READ ARRAY DATA DONE NO READING YES WRITE D0H WRITE FFH ERASE RESUMED READ ARRAY ...

Page 12

LH28F004SU-LC START READ COMPATIBLE STATUS REGISTER 0 CSR RESET WP READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 77H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ...

Page 13

Flash Memory START RESET WP (NOTE 1) ERASE BLOCK (NOTE 2) SET WP (NOTE 3) WRITE NEW DATA TO BLOCK (NOTE 4) RELOCK BLOCK (NOTE 5) OPERATION COMPLETE FLOW TO REWRITE DATA NOTES: 1. Use Reset-Write-Protect ...

Page 14

LH28F004SU-LC START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE FBH WRITE DATA/A 10 WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ANOTHER YES 2-BYTE WRITE NO OPERATION COMPLETE Figure 9. ...

Page 15

Flash Memory START WRITE A7H WRITE D0H READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ...

Page 16

LH28F004SU-LC START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 57H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE 16 BUS COMMAND OPERATION Read Write Set Write Protect ...

Page 17

Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 47H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE BUS COMMAND OPERATION Read ...

Page 18

LH28F004SU-LC ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Temperature under bias ......................... 0°C to +70°C Storage temperature ......................... -65°C to +125° 3.3 V ±0.3 V Systems CC SYMBOL PARAMETER T Operating Temperature, Commercial with Respect to GND ...

Page 19

Flash Memory Timing Nomenclature For 3.3 V systems use 1.5 V cross point definitions. Each timing parameter consists of 5 characters. Some common examples are defined below time (t) from CE     » ...

Page 20

LH28F004SU-LC DC Characteristics V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER I Input Load Current IL I Output Leakage Current Standby Current CCS CC V Deep Power-Down CC I ...

Page 21

Flash Memory DC Characteristics (Continued 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER I V Read Current PPR Write Current PPW Erase ...

Page 22

LH28F004SU-LC AC Characteristics - Read Only Operations V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER t Read Cycle Time AVAV » t Address Setup to OE Going Low AVGL t Address to ...

Page 23

Flash Memory V CC POWER-UP STANDBY V IH ADDRESSES ( ( ( ( HIGH-Z OH DATA (D/Q) V ...

Page 24

LH28F004SU-LC POWER-UP AND RESET TIMINGS V POWER ( ADDRESS (A) DATA (Q) Figure 16. V SYMBOL PARAMETER » Low 3.0 V MIN. PL3V CC t Address ...

Page 25

Flash Memory AC Characteristics for WE     » - Controlled Command Write Operations V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV t ...

Page 26

LH28F004SU-LC WRITE DATA-WRITE DEEP OR ERASE SETUP COMMAND POWER-DOWN V ADDRESSES (A) IH (NOTE AVAV V ADDRESSES (A) IH (NOTE AVAV ( WHEH t ELWL V ...

Page 27

Flash Memory AC Characteristics for CE     » - Controlled Command Write Operations V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV t ...

Page 28

LH28F004SU-LC WRITE DATA-WRITE DEEP OR ERASE POWER-DOWN SETUP COMMAND V ADDRESSES (A) IH (NOTE AVAV V ADDRESSES (A) IH (NOTE AVAV ( EHWH t WLEL V ...

Page 29

Flash Memory Erase and Byte Write Performance V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER 1 t Byte Write Time WHRH 2 t Two-Byte Serial Write Time WHRH ...

Page 30

... DIMENSIONS IN MM [INCHES] MINIMUM LIMIT ORDERING INFORMATION LH28F004SU T Device Type Package Speed Example: LH28F004SUT-LC15 (4M (512K x 8) Flash Memory, 150 ns, 40-pin TSOP) 30 LC## 12 120 Access Time (ns) 15 150 40-pin, 1 TSOP (Type I) (TSOP040-P-1020) 4M (512K x 8) Flash Memory 4M (512K × 8) Flash Memory 40 0 ...

Page 31

... Product which fails during the warranty period because of such defect (if Customer promptly reported the failure to SHARP in writing) or, (ii) if SHARP is unable to repair or replace, SHARP will refund the purchase price of the Product upon its return to SHARP . This warranty does not apply to any Product which has been subjected to misuse, abnormal service or handling, or which has been altered or modified in design or construction, or which has been serviced or repaired by anyone other than SHARP ...

Related keywords