2SJ132 Renesas Electronics Corporation., 2SJ132 Datasheet

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2SJ132

Manufacturer Part Number
2SJ132
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SJ132.pdf (6 pages)

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Document No. D16192EJ4V0DS00 (4th edition)
Date Published January 2007 NS CP(K)
Printed in Japan
FEATURES
• Gate drive available at logic level (V
• High current control available in small dimension due to low R
• 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC.
ABSOLUTE MAXIMUM RATINGS (T
Note 1. Printing board mounted
EQUIVALENT CIRCUIT
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (pulse)
Total power dissipation
Total power dissipation
Channel temperature
Storage temperature
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Gate
2. 7.5 cm
Parameter
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
× 0.7 mm ceramic board mounted
Source
Drain
Internal
diode
Symbol
I
I
D(pulse)
V
V
D(DC)
P
P
T
T
DSS
GSS
stg
T1
T2
ch
V
V
T
PW ≤ 300
duty cycle ≤ 10%
T
T
GS
DS
C
C
A
GS
= 25°C
P-CHANNEL POWER MOSFET
= 25°C
= 25°C
Conditions
The mark <R> shows major revised points.
= 0 V
= 0 V
= −4 V)
A
= 25°C)
μ
s
MOS FIELD EFFECT POWER TRANSISTOR
FOR SWITCHING
DATA SHEET
1.0
−55 to +150
Note 1
Ratings
m2.0
m8.0
−30
m20
150
20
, 2.0
DS(on)
Note 2
(≅ 0.25 Ω)
Unit
°C
°C
W
W
V
V
A
A
2SJ132,132-Z
PACKAGE DRAWING (UNIT: mm)
Note The depth of notch at the top of the fin is
2.3 ±0.3
<R>
1.1 ±0.2
from 0 to 0.2 mm.
TO-252 (MP-3Z)
TO-251 (MP-3)
6.5 ±0.2
5.0 ±0.2
1
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2.3
2
2.3
4
4
3
2.3 ±0.3
Note
0.5 ±0.1
2.3 ±0.2
Electrode connection
1. Gate
2. Drain
3. Source
4. Fin (drain)
2.3 ±0.2
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
0.5 ±0.1
Note
2002

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2SJ132 Summary of contents

Page 1

... FEATURES • Gate drive available at logic level (V • High current control available in small dimension due to low R • 2SJ132 lead process product and is ideal for mounting a hybrid IC. ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Drain to source voltage V DSS Gate to source voltage V GSS Drain current (DC) ...

Page 2

... MHz C oss C rss = −1 − d(on) D GS(on) V ≅ − Ω Ω d(off Data Sheet D16192EJ4V0DS 2SJ132,132-Z MIN. TYP. MAX. Unit μ − m100 −1.0 −2.0 −3.0 V 1.0 1.8 S Ω 0.25 0.4 0.4 0.6 Ω 730 pF 180 ...

Page 3

... TYPICAL CHARACTERISTICS ( 25°C) Data Sheet D16192EJ4V0DS 2SJ132,132-Z 3 ...

Page 4

... Data Sheet D16192EJ4V0DS 2SJ132,132-Z ...

Page 5

... Data Sheet D16192EJ4V0DS 2SJ132,132-Z 5 ...

Page 6

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ132,132-Z M8E 02. 11-1 ...

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