TE28F320 Intel Corporation, TE28F320 Datasheet
TE28F320
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TE28F320 Summary of contents
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Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Product Features Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — Fast Production Programming PP 2 1.65 V I/O Option — Reduces ...
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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800- 548-4725 or by visiting Intel's website at http://www.intel.com. Copyright © Intel Corporation 1999– 2000. *Other brands and names are the property of their respective owners. ...
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Contents 1.0 Introduction .................................................................................................................. 1 1.1 Product Overview .................................................................................................. 2 2.0 Product Description 2.1 Package Pinouts ................................................................................................... 3 2.2 Block Organization ................................................................................................ 7 2.2.1 Parameter Blocks ..................................................................................... 7 2.2.2 Main Blocks .............................................................................................. 7 3.0 Principles of Operation 3.1 Bus Operation ...
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Reset Operations 6.0 Ordering Information 7.0 Additional Information Appendix A Write State Machine Current/Next States Appendix B Architecture Block Diagram Appendix C Word-Wide Memory Map Diagrams Appendix D Byte-Wide Memory Map Diagrams Appendix E ...
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Revision History Number -001 Original version Section 3.4, V Updated Figure 9: Automated Block Erase Flowchart Updated Figure 10: Erase Suspend/Resume Flowchart (added program to table) Updated Figure 16: AC Waveform: Program and Erase Operations (updated notes) -002 I PPR ...
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Number -008 4-Mbit packaging and addressing information corrected throughout document -009 Corrected 4-Mbit memory addressing tables in Appendices D and E Max I -010 V CC Added 64-Mbit density and faster speed offerings -011 Removed ...
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Introduction This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2 2.7 V–3.6 V I/Os and a ...
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Product Overview Intel provides the most flexible voltage solution in the flash industry, providing three discrete voltage supply pins: V erase operation. All 3 Volt Advanced Boot Block flash memory products provide program/erase capability ...
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Product Description This section explains device pin description and package pinouts. 2.1 Package Pinouts The 3 Volt Advanced Boot Block flash memory is available in 40-lead TSOP (x8, 48-lead TSOP (x16, and 48-ball VF BGA (x16, upgrades have been ...
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Figure 2. 48-Lead TSOP Package for x16 Configurations WE# RP# V ...
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Figure 4. x16 48-Ball Very Thin Profile Pitch BGA and µBGA* Chip Size Package (Top View, Ball Down CCQ F GND NOTES: 1. Shaded connections ...
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Table 2. 3 Volt Advanced Boot Block Pin Descriptions Symbol Type ADDRESS INPUTS for memory addresses. Addresses are internally latched during a program or erase cycle. A –A INPUT 28F004B3: A[0-18], 28F008B3: A[0-19], 28F016B3: A[0-20], ...
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Block Organization The 3 Volt Advanced Boot Block is an asymmetrically-blocked architecture that enables system integration of code and data within a single flash device. Each block can be erased independently of the others up to 100,000 times. For ...
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Table 3. Bus Operations Mode Read (Array, Status, or Identifier) Output Disable Standby Reset Write NOTES: 1. 8-bit devices use only DQ[0:7], 16-bit devices use DQ[0:15 must ...
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If RP# is taken low for time t aborted and the memory contents at the aborted location (for a program) or block (for an erase) are no longer valid, since the data may be partially erased or written. The abort ...
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When the device is in read array mode, four control signals control data output: • WE# must be logic high (V • CE# must be logic low (V • OE# must be logic low (V ...
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Read Identifier To read the manufacturer and device codes, the device must be in read identifier mode, which can be reached by writing the Read Identifier command (90H). Once in read identifier mode, A outputs the manufacturer’s identification code ...
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Clear the status register before beginning another command or sequence. Note, again, that the Read Array command must be issued before data ...
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When the status register indicates that erasure is complete, check the erase status bit to verify that the erase operation was successful. If the erase operation was unsuccessful, SR.5 of the status register will be set to a “1,” indicating ...
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Table 7. Status Register Bit Definition WSMS ESS SR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy SR.6 = ERASE-SUSPEND STATUS (ESS Erase Suspended 0 ...
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WP for Block Unlocking IH WP unlocks all lockable blocks. IH These blocks can now be programmed or erased. Note that RP# does not override WP# locking as in previous Boot Block devices. WP# controls ...
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Active Power With CE logic-low level and RP logic-high level, the device is in the active mode. Refer to the DC Characteristic tables for I overall system power consumption. Minimizing ...
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RP# Connected to System Reset The use of RP# during system reset is important with automated program/erase devices since the system expects to read from the flash memory when it comes out of reset CPU reset occurs ...
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Electrical Specifications 4.1 Absolute Maximum Ratings Extended Operating Temperature During Read During Block Erase and Program Temperature under Bias Storage Temperature Voltage On Any Pin (except V V Voltage (for Block Erase and Program) ...
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Operating Conditions Symbol T Operating Temperature A V CC1 V V CC2 CC V CC3 V CCQ1 V I/O Supply Voltage CCQ2 V CCQ3 V PP1 V PP2 Program and Erase Voltage V PP3 V PP4 Cycling Block Erase ...
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DC Characteristics Sym Parameter I Input Load Current LI I Output Leakage Current LO V Standby Current for CC 0.18 Micron Product I CCS V Standby Current for CC 0.25 Micron and 0.4 Micron ...
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DC Characteristics, Continued Sym Parameter Erase Current CC PP for 0.18 Micron Product I CCE +I PPE Erase Current CC PP for 0.25 Micron and 0.4 Micron Product I V Erase Suspend PPES PP ...
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Since each column lists specifications for a different V conditions V Max voltage listed at the top of each column Automatic Power Savings (APS) reduces I 4. Sampled, not 100% ...
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AC Characteristics —Read Operations Density Product # Sym Parameter R1 t Read Cycle Time AVAV R2 t Address to Output Delay AVQV ( CE# to Output Delay ELQV ( OE# to Output Delay GLQV R5 ...
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AC Characteristics, Continued Density Product 70 ns Para- # Sym meter V 2.7 V–3 Min R1 t Read Cycle Time 70 AVAV Address to Output R2 t AVQV Delay CE# to Output R3 ...
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AC Characteristics, Continued Density Product Para- # Sym meter V 2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.3 V 2.7 V–3.3 V 3.0 V–3.3 V 2.7 V–3 Min R1 t Read Cycle Time AVAV Address to Output R2 ...
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AC Characteristics, Continued # Sym R1 t Read Cycle Time AVAV R2 t Address to Output Delay AVQV R3 t CE# to Output Delay ELQV R4 t OE# to Output Delay GLQV R5 t RP# ...
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AC Characteristics —Write Operations # Sym Parameter t / PHWL W1 RP# High Recovery to WE# (CE#) Going Low t PHEL t / ELWL W2 CE# (WE#) Setup to WE# (CE#) Going Low t WLEL t / ELEH W3 ...
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AC Characteristics—Write Operations, continued # Sym Parameter t / RP# High Recovery to WE# (CE#) PHWL W1 t Going Low PHEL t / CE# (WE#) Setup to WE# (CE#) Going ELWL W2 t Low WLEL ...
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AC Characteristics—Write Operations, continued # Sym Parameter t / RP# High Recovery to WE# (CE#) PHWL W1 t Going Low PHEL t / CE# (WE#) Setup to WE# (CE#) Going ELWL W2 t Low WLEL t / ELEH W3 WE# ...
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AC Characteristics—Write Operations, continued # Sym t / PHWL W1 RP# High Recovery to WE# (CE#) Going Low t PHEL t / ELWL W2 CE# (WE#) Setup to WE# (CE#) Going Low t WLEL t ...
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Program and Erase Timings Symbol 8-KB Parameter Block Program Time (Byte) t BWPB 4-KW Parameter Block Program Time (Word) 64-KB Main Block Program Time (Byte) t BWMB 32-KW Main Block Program Time(Word) Byte Program Time Word Program Time for ...
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Figure 8. AC Waveform: Program and Erase Operations ADDRESSES [ CE#(WE#) [E(W OE# [ WE#(CE#) [W(E ...
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Reset Operations Figure 9. AC Waveform: Deep Power-Down/Reset Operation Symbol RP# Low to Reset during Read t PLPH (If RP# is tied RP# Low to Reset during Block Erase or Program PLRH NOTES ...
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Ordering Information Package TE = 40-Lead/48-Lead TSOP GT = 48-Ball µBGA* CSP BGA CSP Product line designator ...
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... For new designs, Intel recommends using 0.25 µm Advanced Boot Block devices. 3UHOLPLQDU\ 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 (1,2) 48-Lead TSOP TE28F640B3TC90 TE28F640B3BC90 TE28F640B3TC100 TE28F640B3BC100 TE28F320B3TC70 TE28F320B3BC70 TE28F320B3TC90 TE28F320B3BC90 TE28F320B3TA100 TE28F320B3BA100 TE28F320B3TA110 TE28F320B3BA110 TE28F160B3TC70 TE28F160B3BC70 TE28F160B3TC80 TE28F160B3BC80 (3) (3) TE28F160B3TA90 (3) (3) TE28F160B3BA90 (3) ...
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Additional Information Order Number 297948 3 Volt Advanced Boot Block Flash Memory Family Specification Update 292199 AP-641 Achieving Low Power with the 3 Volt Advanced Boot Block Flash Memory 292200 AP-642 Designing for Upgrade ...
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Appendix A Write State Machine Current/Next States Data Read Current State SR.7 When Array Read (FFH) Read Read Array “1” Array Array Read Read Status “1” Status Array Read Read “1” Identifier Identifier Array Prog. Setup “1” Status Program “0” ...
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Appendix B Architecture Block Diagram V CCQ Input Buffer Address Latch Address Counter Output Buffer Identifier Register Status Register Power Data Reduction Comparator Control Y-Decoder Y-Gating/Sensing ...
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Appendix C Word-Wide Memory Map Diagrams 16-Mbit and 32-Mbit Word-Wide Memory Addressing Top Boot Size 16 Mbit (KW) 4 FF000-FFFFF 4 FE000-FEFFF 4 FD000-FDFFF 4 FC000-FCFFF 4 FB000-FBFFF 4 FA000-FAFFF 4 F9000-F9FFF 4 F8000-F8FFF 32 F0000-F7FFF 32 E8000-EFFFF 32 E0000-E7FFF ...
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Word-Wide Memory Addressing (Continued) Top Boot Size 16 Mbit (KW ...
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Word-Wide Memory Addressing Top Boot Size 4 Mbit (KW) 3F000-3FFFF 7F000-7FFFF 3E000-3EFFF 7E000-7EFFF 3D000-3DFFF 7D000-7DFFF 3C000-3CFFF 7C000-7CFFF 3B000-3BFFF 7B000-7BFFF 3A000-3AFFF 7A000-7AFFF 39000-39FFF 79000-79FFF 38000-38FFF 78000-78FFF 4 30000-37FFF 70000-77FFF 4 28000-2FFFF 68000-6FFFF 4 20000-27FFF 60000-67FFF 4 18000-1FFFF 58000-5FFFF ...
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Word-Wide Memory Addressing Top Boot Size 16 Mbit 32 Mbit (KW) 4 FF000-FFFFF 1FF000-1FFFFF 4 FE000-FEFFF 1FE000-1FEFFF 4 FD000-FDFFF 1FD000-1FDFFF 4 FC000-FCFFF 1FC000-1FCFFF 4 FB000-FBFFF 1FB000-1FBFFF 4 FA000-FAFFF 1FA000-1FAFFF 4 F9000-F9FFF ...
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Word-Wide Memory Addressing (Continued) Top Boot Size 16 Mbit 32 Mbit (KW) 32 0A8000-0AFFFF 32 0A0000-0A7FFF 32 098000-09FFFF 32 090000-097FFF 32 088000-08FFFF 32 080000-087FFF 32 078000-07FFFF 32 070000-077FFF 32 068000-06FFFF 32 060000-067FFF 32 058000-05FFFF 32 050000-057FFF ...
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Word-Wide Memory Addressing (Continued) Top Boot Size 16 Mbit 32 Mbit (KW ...
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Appendix D Byte-Wide Memory Map Diagrams 8-Mbit and 16-Mbit Byte-Wide Byte-Wide Memory Addressing Top Boot Size (KB) 8 Mbit 8 FE000-FFFFF 8 FC000-FDFFF 8 FA000-FBFFF 8 F8000-F9FFF 8 F6000-F7FFF 8 F4000-F5FFF 8 F2000-F3FFF 8 F0000-F1FFF 64 E0000-EFFFF 64 D0000-DFFFF 64 ...
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Byte-Wide Memory Addressing (Continued) Top Boot Size (KB) 8 Mbit ...
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Top Boot Size 4 Mbit (KB) 8 7E000-7FFFF 8 7C000-7DFFF 8 7A000-7BFFF 8 78000-79FFF 8 76000-77FFF 8 74000-75FFF 8 72000-73FFF 8 70000-71FFF 64 60000-6FFFF 64 50000-5FFFF 64 40000-4FFFF 64 30000-3FFFF 64 20000-2FFFF 64 10000-1FFFF 64 00000-0FFFF 3UHOLPLQDU\ 28F004/400B3, 28F008/800B3, 28F016/160B3, ...
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Appendix E Program and Erase Flowcharts Figure 10. Program Flowchart Start Write 40H Program Address/Data Read Status Register SR Yes Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status ...
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Figure 11. Program Suspend/Resume Flowchart Start Write B0H Write 70H Read Status Register SR SR Write FFH Read Array Data Done Reading Yes Write D0H Program Resumed 3UHOLPLQDU\ 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Operation 0 0 ...
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Figure 12. Block Erase Flowchart Start Write 20H Write D0H and Block Address Read Status Register SR Full Status Check if Desired Block Erase Complete FULL STATUS CHECK PROCEDURE Read Status Register Data ...
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Figure 13. Erase Suspend/Resume Flowchart Start Write B0H Write 70H Read Status Register SR SR Write FFH Read Array Data Done Reading Yes Write D0H Erase Resumed 3UHOLPLQDU\ 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Bus Operation Write ...
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