MBM29F160BE-70PFTN Fujitsu, MBM29F160BE-70PFTN Datasheet

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MBM29F160BE-70PFTN

Manufacturer Part Number
MBM29F160BE-70PFTN
Description
Fujitsu Media Devices Limited [16M (2M X 8/1M X 16) BIT]
Manufacturer
Fujitsu
Datasheet

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FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16M (2M
MBM29F160TE/BE
Ordering Part No.
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
GENERAL DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
programmed in-system with the standard system 5.0 V V
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
PRODUCT LINE UP
PACKAGES
DATA SHEET
Part No.
V
V
CC
CC
= 5.0 V 5%
= 5.0 V 10%
(FPT-48P-M19)
8/1M
Marking Side
48-pin plastic TSOP (I)
16) BIT
-55
55
55
30
CC
supply. 12.0 V V
-55/-70/-90
MBM29F160TE/160BE
Marking Side
(FPT-48P-M20)
-70
70
70
30
PP
is not required for write or erase
2
PROMs. Commands are
DS05-20879-2E
-90
90
90
40
(Continued)

MBM29F160BE-70PFTN Summary of contents

Page 1

... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M 8/1M MBM29F160TE/BE GENERAL DESCRIPTION The MBM29F160TE/ 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be programmed in-system with the standard system 5 operations ...

Page 2

... The MBM29F160TE/BE memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection Embedded Erase and Embedded Program 2 /MBM29F160BE TM are trademarks of Advanced Micro Devices, Inc. -55/-70/-90 detector automatically ...

Page 3

... Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) • WP Input pin (Hardware Protect allows protection of boot sectors, regardless of sector protection/unprotection status allows removal of boot sector protection IH At open, allows removal of boot sector protection (MBM29F160TE/BE) /MBM29F160BE -55/-70/-90 2 PROMs -55/-70/-90 3 ...

Page 4

... RY/BY N.C. N.C. RESET WE N. /MBM29F160BE TSOP(I) 1 (Marking Side Standard Pinout (FPT-48P-M19) 24 (Marking Side ...

Page 5

... V CC RY/BY Buffer State BYTE Control RESET WP Command Register CE OE Low V Detector /MBM29F160BE -55/-70/-90 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder -55/-70/- Input/Output Buffer STB ...

Page 6

... Kbytes or 32 Kwords SA31 32 Kbytes or 16 Kwords SA32 8 Kbytes or 4 Kwords SA33 8 Kbytes or 4 Kwords SA34 16 Kbytes or 8 Kwords MBM29F160TE Top Boot Sector Architecture 6 /MBM29F160BE -55/-70/- Address Range ( 16) Address Range 00000H to 0FFFFH 00000H to 07FFFH 10000H to 1FFFFH 08000H to 0FFFFH 20000H to 2FFFFH 10000H to 17FFFH 30000H to 3FFFFH ...

Page 7

... SA30 64 Kbytes or 32 Kwords SA31 64 Kbytes or 32 Kwords SA32 64 Kbytes or 32 Kwords SA33 64 Kbytes or 32 Kwords SA34 64 Kbytes or 32 Kwords MBM29F160BE Bottom Boot Sector Architecture /MBM29F160BE -55/-70/- Address Range 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH ...

Page 8

... MBM29F160TE -55/-70/-90 LOGIC SYMBOLL RY/BY WE RESET BYTE 8 /MBM29F160BE Table 1 MBM29LV160TE/BE Pin Configuration Pin Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/ ...

Page 9

... Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 7. 2. Refer to the section on Sector Protection can =5.0 V ±10% CC /MBM29F160BE -55/-70/- ...

Page 10

... IL identifier code (MBM29F160TE = D2H and MBM29F160BE = D8H for x 8 mode; MBM29F160TE = 22D2H and MBM29F160BE = 22D8H for x 16 mode). These two bytes/words are given in the Table 4.1 and 4.2. All identifiers for manufactures and device will exhibit odd parity with DQ device codes when executing the Autoselect, A ...

Page 11

... Code DQ 15 Manufacture’s Code 04H D2H A (B) -1 MBM29F160TE 0 (W) 22D2H Device Code D8H A (B) -1 MBM29F160BE 0 (W) 22D8H Sector Protection 01H (B): Byte mode (W): Word mode /MBM29F160BE -55/-70/- Byte Byte ...

Page 12

... SA30 SA31 SA32 SA33 SA34 /MBM29F160BE Sector Address Tables (MBM29F160TE Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH ...

Page 13

... SA30 SA31 SA32 SA33 SA34 /MBM29F160BE -55/-70/-90 Sector Address Tables (MBM29F160BE Address Range 00000H to 03FFFH 04000H to 05FFFH 06000H to 07FFFH 08000H to 0FFFFH ...

Page 14

... V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the taken away from the RESET pin, all the previously protected sectors will be protected again. Refer to Figures 18 and 25. 14 /MBM29F160BE , while and ...

Page 15

... PD =Data to be programmed at location PA. Data is latched on the rising edge of WE. 5. The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A Byte Mode: AAAH or 555H to addresses A 6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. /MBM29F160BE -55/-70/-90 Second Fourth Bus Third Bus ...

Page 16

... The operation is initiated by writing the Autoselect command sequence into the command register. Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29F160TE = D2H and 16 /MBM29F160BE First Bus Second Bus Write Cycle ...

Page 17

... MBM29F160TE MBM29F160BE = D8H for 8 mode; MBM29F160TE = 22D2H and MBM29F160BE = 22D8H for 16 mode). (See Tables 4.1 and 4.2.) All manufactures and device codes will exhibit odd parity with DQ The sector state (protection or unprotection) will be indicated by address XX02H for 16 (XX04H for 8). Scanning the sector addresses (A a logical “ ...

Page 18

... Successively reading from the erase-suspended sector while the devices are in the erase-suspend-program mode will cause DQ suspended Program operation is detected by the RY/BY output pin, Data polling /MBM29F160BE , Sector Erase Timer.) Any command other than Sector Erase 3 is “1” (See Write Operation Status section) ...

Page 19

... Notes: 1. Performing successive read operations from any address will cause DQ 2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ bit. However, successive reads from the erase-suspended sector will cause DQ 2 /MBM29F160BE -55/-70/-90 must be read from the Program address 7 active current is required even ...

Page 20

... DQ will produce a “1”. This is a failure condition which indicates that the program or erase 5 cycle was not successfully completed. Data Polling is the only operating function of the device under this 20 /MBM29F160BE . Upon completion of the Embedded Program 7 output. Upon completion of the 7 ...

Page 21

... DQ does not.) See also Table 10 and Figure 18 /MBM29F160BE -55/-70/-90 never stops toggling. Once the device has exceeded timing limits, the toggle during the Embedded Erase Algorithm. If the 2 toggles only when the standard program or Erase, or Erase Suspend 6 ...

Page 22

... the users responsibility to ensure that the control pins are logically correct CC LKO to prevent unintentional writes when V 22 /MBM29F160BE ) for at least t in order to properly reset the internal state machine. Any bits are tri-stated. However, the command bus cycle is always ...

Page 23

... Logical Inhibit Writing is inhibited by holding any one logical zero while logical one. Power-up Write Inhibit Power-up of the devices with The internal state machine is automatically reset to read mode on power-up. /MBM29F160BE -55/-70/- initiate a write, CE and WE must IL IH ...

Page 24

... Min.(Acceleration) Supply 0000h ACC 00h = Not Supported 0000h D7-4: volt, D3-0: 100 mvolt 0004h V Max.(Acceleration) Supply ACC 00h = Not Supported D7-4: volt, D3-0: 100 mvolt 0000h 0000h Boot Type 0040h 02h = MBM29F160BE 0000h 03h = MBM29F160TE -55/-70/- 31h 0001h 32h 0000h ...

Page 25

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. /MBM29F160BE -55/-70/-90 Symbol Min. ...

Page 26

... MAXIMUM OVERSHOOT +0.8 V -0.5 V -2.0 V Figure 1 Maximum Negative Overshoot Waveform +2.0 V Figure 2 Maximum Positive Overshoot Waveform 1 +14.0 V +13 0 Note : This waveform is applied for A Figure 3 Maximum Positive Overshoot Waveform 2 26 /MBM29F160BE OE, and RESET. 9 -55/-70/-90 ...

Page 27

... DC operating current and the frequency dependent component active while Embedded Erase or Embedded Program is in progress Automatic sleep mode enables the low power mode when address remain stable for 150 ns – not exceed /MBM29F160BE -55/-70/-90 Test Conditions Max ...

Page 28

... Input rise and fall times Input pulse levels 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Device Under Test Notes : including jig capacitance (MBM29F160TE/BE-55/-70 100 pF including jig capacitance (MBM29F160TE/BE-55/-70 /MBM29F160BE Test Setup — Min Max Max. IL — Max. — ...

Page 29

... Write Pulse Width (Note 2) WPP — Setup Time to WE Active (Note 2) OESP — Setup Time to WE Active (Note 2) CSP — t Recover Time From RY/BY RB /MBM29F160BE -55/-70/-90 Description Min. Min. Min. Min. Min. Min. Read Min. Toggle and Data Polling Min. Min. ...

Page 30

... BYTE Switching High to Output Active FHQV — t Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 30 /MBM29F160BE Description Min. Max. Max. Min. (Note 2) Min. ID Min. -55/-70/-90 MBM29F160TE/BE Unit -55 -70 ...

Page 31

... MBM29F160TE SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE HIGH-Z Outputs Figure 5.1 AC Waveforms Read Operations /MBM29F160BE -55/-70/-90 INPUTS OUTPUTS Will Be Must Be Steady Steady Will Be May Change Change from from May Will Be Change Change from from “H” or “L”; ...

Page 32

... MBM29F160TE -55/-70/-90 Addresses RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations 32 /MBM29F160BE t RC Addresses Stable t ACC Output Valid -55/-70/- ...

Page 33

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 6 AC Waveforms for Alternate WE Controlled Program Operations /MBM29F160BE Data Polling ...

Page 34

... OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 7 AC Waveforms for Alternate CE Controlled Program Operations 34 /MBM29F160BE 3rd Bus Cycle Data Polling 555H PA t ...

Page 35

... VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 AC Waveforms for Chip/Sector Erase Operations /MBM29F160BE 2AAH 555H 555H 2AAH t AH ...

Page 36

... Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations OES OE Data ( Stops toggling. (The device has completed the Embedded operation.) 6 Figure 10 AC Waveforms for Taggle Bit I during Embedded Algorithm Operations 36 /MBM29F160BE OEH WHWH1 Output Flag 0 6 OEH t OH ...

Page 37

... MBM29F160TE -55/-70/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 12 RESET, RY/BY Timing Diagram /MBM29F160BE The rising edge of the last WE signal Entlre programming or erase operations t BUSY READY -55/-70/-90 37 ...

Page 38

... ELFH Figure 13 Timing Diagram for Word Mode Configuration CE OE BYTE t ELFL Figure 14 Timing Diagram for Byte Mode Configuration 38 /MBM29F160BE FHQV ...

Page 39

... MBM29F160TE -55/-70/- BYTE Figure 15 BYTE Timing Diagram for Write Operations /MBM29F160BE The falling edge of the last write signal Input Valid t SET ( HOLD AH -55/-70/-90 39 ...

Page 40

... VLHT WE CE Data t VCS V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Note byte mode Figure 16 AC Waveforms for Sector Protection Timing Diagram 40 /MBM29F160BE t VIDR t VIDR t WPP t t VLHT OESP t CSP -55/-70/-90 SAY t VLHT ...

Page 41

... Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and With OE Note read from the erase-suspended sector. 2 /MBM29F160BE -55/-70/-90 Program or Erase Command Sequence Unprotection period Enter Erase Suspend Program Erase Erase Suspend Suspend Read Read Program Figure -55/-70/-90 t ...

Page 42

... MBM29F160TE -55/-70/-90 FLOW CHART Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 19 Embedded Program 42 /MBM29F160BE Start Write Program Command Sequence (See Below) Data Polling Davice No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command) : ...

Page 43

... Chip Erase Command Sequence* (Address/Command) : 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 20 Embedded Erase /MBM29F160BE Start Sequence (See Below) from Device Data = FFH ? Yes Individual Sector/Multlple Sector* Erase Command Sequence (Address/Command) : ...

Page 44

... MBM29F160TE -55/-70/- rechecked even /MBM29F160BE VA =Address for programming Start Read Byte ( Addr Yes DQ = Data ? Yes Read Byte ( Addr Yes DQ = Data ? Fail Pass = “1” because DQ may change simultaneously with Figure 21 Data Polling Algorithm ...

Page 45

... MBM29F160TE -55/-70/- rechecked even “1” because changing to “1”. 5 Figure 22 Toggle Bit Algorithm /MBM29F160BE Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” ...

Page 46

... MBM29F160TE -55/-70/-90 Increment PLSCNT PLSCNT = 25 ? Pemove V Write Reset Command Device Failed * : byte mode Figure 23 Sector Protection Algorithm 46 /MBM29F160BE Start Setup Sector Addr PLSCNT = RESET = ...

Page 47

... MBM29F160TE -55/-70/-90 Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 24 Temporary Sector Unprotection Algorithm /MBM29F160BE Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) -55/-70/-90 47 ...

Page 48

... MBM29F160TE -55/-70/-90 Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 25 Embedded Programming Algorithm for Fast Mode 48 /MBM29F160BE Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed XXXXH/90H ...

Page 49

... Chip Programming Time Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz A /MBM29F160BE -55/-70/-90 Limits Min. Typ. Max. — — 8 150 — 16 200 — 16.8 40 100,000 — ...

Page 50

... Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F160 T E -55 DEVICE NUMBER/DESCRIPTION MBM2F160 16 Mega-bit (2M 5.0 V-only Read, Write, and Erase 50 /MBM29F160BE PFTN PACKAGE TYPE TN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout TR = 48-Pin Thin Small Outline Package SPEED OPTION See Product Selector Guide ...

Page 51

... LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 C /MBM29F160BE -55/-70/-90 *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006 12.00±0.20 (.472±.008) 11.50REF (.460) 0.50(.0197) TYP 0.15± ...

Page 52

... INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C /MBM29F160BE -55/-70/-90 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 0.25(.010) 25 0.50±0.10 (.020±.004) 0.15±0.10 0.20±0.10 (.006±.002) (.008± ...

Page 53

... New Tech Park, Singapore 556741 Tel: +65-281-0770 Fax: +65-281-0220 http://www.fmap.com.sg/ F0001 FUJITSU LIMITED Printed in Japan /MBM29F160BE -55/-70/-90 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use ...

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