FA57SA50LCP Vishay Semiconductors, FA57SA50LCP Datasheet - Page 3

• Manufacturer Part Number: FA57SA50LCP
• Description: Power MOSFET, 57 A
• Manufacturer: Vishay Semiconductors

Document Number: 94548
Revision: 12-May-10
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1000
1000
1000
100
100
100
0.1
0.1
10
10
10
1
1
1
0.1
0.1
4
T = 150 C
TOP
BOTTOM
TOP
BOTTOM
Fig. 3 - Typical Transfer Characteristics
J
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
V
DS
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
°
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.5V
6
1
1
[e-mail], [e-mail],
T = 25 C
J
For technical questions within your region, please contact one of the following:
7
20μs PULSE WIDTH
T = 150 C
°
20μs PULSE WIDTH
T = 25 C
V
20μs PULSE WIDTH
J
J
DS
4.5V
10
10
8
= 50V
°
°
9
100
100
10
Power MOSFET, 57 A
Fig. 5 - Typical Capacitance vs. Drain to Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
15000
12000
9000
6000
3000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
[e-mail]
20
16
12
8
4
0
0
-60 -40 -20
0
1
I =
I =
D
D
57A
57 A
-V
60
T , Junction Temperature ( C)
DS
Q , Total Gate Charge (nC)
J
G
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0
Vishay Semiconductors
120
=
=
=
=
20
V
V
V
0V,
C
C
C
DS
DS
DS
gs
gd
ds
C rss
C iss
C oss
40
+ C
+ C
= 400V
= 250V
= 100V
180
10
f = 1MHz
gd ,
gd
60
FA57SA50LCP
FOR TEST CIRCUIT
SEE FIGURE
80 100 120 140 160
C
240
ds
SHORTED
V
°
300
GS
=
13
10V
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100
360
3