CM200DU-12H_09 MITSUBISHI, CM200DU-12H_09 Datasheet - Page 4

• Manufacturer Part Number: CM200DU-12H_09
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
I
Single Pulse
T
C
2 3 5 7
C
IMPEDANCE CHARACTERISTICS
Per unit base = R
= 200A
COLLECTOR CURRENT I
= 25°C
100
2
GATE CHARGE Q
TRANSIENT THERMAL
10
3
–2
200
HALF-BRIDGE
2 3 5 7
5 7
( TYPICAL )
( TYPICAL )
V
( IGBT part )
TIME ( s )
CC
300
10
10
10
= 200V
2
–1
th(j – c)
–5
2 3 5 7
2 3 5 7
V
CC
400
2
G
t
t
t
t
V
V
R
T
d(on)
d(off)
r
= 300V
f
= 0.19K/W
( nC )
CC
GE
j
G
10
3
10
= 125°C
= 3.1Ω
–4
C
0
500
= 300V
= ±15V
2 3 5 7
2 3 5 7
( A )
5 7
600
10
10
10
10
10
10
3
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
–di/dt = 400A/µs
T
1
–3
Single Pulse
T
j
IMPEDANCE CHARACTERISTICS
2 3 5 7
C
= 25°C
Per unit base = R
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
10
3
–2
2 3 5 7
HIGH POWER SWITCHING USE
5 7
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
10
10
10
2
–1
th(j – c)
–5
2 3 5 7
2 3 5 7
CM200DU-12H
2
t
l
= 0.35K/W
rr
rr
10
10
3
E
( A )
0
–4
INSULATED TYPE
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
3
10
7
5
3
2
10
7
5
3
2
10
3
2
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
1
0
–1
Feb. 2009