HFA120FA120P Vishay Semiconductors, HFA120FA120P Datasheet - Page 4

• Manufacturer Part Number: HFA120FA120P
• Manufacturer: Vishay Semiconductors

HFA120FA120P
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
Fig. 6 - Typical Reverse Recovery Time vs. dI
300
250
200
150
100
50
1
C
0
0
= T
If = 50A, Tj = 25°C
J
- (Pd + Pd
F(AV)
dI
F
R1
/dt (A/μs)
REV
x V
x I
If = 50A, Tj = 125°C
FM
) x R
R
(1 - D); I
For technical questions, contact: [e-mail]
at (I
Vr = 200V
thJC
F(AV)
;
Fig. 8 - Typical Peak Recovery Current vs. dI
R
/D) (see fig. 5);
at V
1
40
30
20
10
Ultrafast Soft Recovery
0
0
0
1
0
R1
0
0
F
= Rated V
/dt
If = 50A, Tj = 125°C
Diode, 120 A
HEXFRED
R
If = 50A, Tj = 25°C
dI
F
/dt (A/μs)
®
Vr = 200V
1
3000
2500
2000
1500
1000
0
500
0
Fig. 7 - Typical Stored Charge vs. dI
0
0
1
F
0
/dt
0
If = 50A, Tj = 125°C
If = 50A, Tj = 25°C
dI
F
/dt (A/μs)
Vr = 200V
Document Number: 94608
Revision: 16-Oct-08
1
0
F
0
/dt
0