BSM300GB120DLC Eupec GmbH, BSM300GB120DLC Datasheet

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BSM300GB120DLC

Manufacturer Part Number
BSM300GB120DLC
Description
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
Manufacturer
Eupec GmbH
Datasheet

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Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: MOD-D2; Mark Münzer
approved by: SM TM; Wilhelm Rusche
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
date of publication: 2003-01-29
revision: 3.0
BSM300GB120DLC
P
P
C
C
C
V
vj
C
C
C
R
GE
CE
= 1 ms, T
= 1 ms
GE
= 25°C, Transistor
= 300A, V
= 300A, V
= 12mA, V
=25°C
= 80 °C
= 25 °C
= 0V, t
= 0V, T
= 0V, V
= -15V...+15V
p
vj
vj
vj
= 10ms, T
C
GE
= 25°C, V
GE
GE
= 25°C,V
= 25°C,V
CE
= 80°C
= 20V, T
= 15V, T
= 15V, T
= V
GE
Vj
, T
CE
CE
CE
vj
= 125°C
vj
vj
= 1200V
vj
= 25V, V
= 25V, V
= 25°C
= 25°C
= 125°C
= 25°C
1 (9)
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
I
I
C
C
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
res
C
tot
F
ies
G
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
1200
typ.
300
625
600
300
600
2,5
2,5
2,1
2,4
5,5
3,2
1,4
19
21
-
-
max.
400
2,6
2,9
6,5
5
-
-
-
DB_BSM300GB120DLC_3.0
k A
kW
mA
kV
nF
nF
nA
V
A
A
A
V
A
A
V
V
V
C
2
s
2003-01-29

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BSM300GB120DLC Summary of contents

Page 1

... V 1200 V CES I 300 A C,nom. I 625 600 A CRM P 2,5 kW tot V +/- 20V V GES I 300 600 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE(th 3 ies res CES 400 nA GES DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 2

... off I - 1800 - 0, CC‘+EE‘ min. typ. max 1,8 2 1,7 2 348 - 420 - µ µ rec - DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 3

... Modul / per module = Paste grease Schraube / screw M6 Anschlüsse / terminals M6 3 (9) min. typ. max 0,050 K/W thJC - - 0,125 K 0,010 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 225 M 3 2 340 g DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 4

... Ausgangskennlinienfeld (typisch) Output characteristic (typical) 600 500 VGE = 17V VGE = 15V VGE = 13V 400 VGE = 11V VGE = 9V VGE = 7V 300 200 100 0 0,0 0,5 1,0 BSM300GB120DLC 15V GE 1,5 2,0 2,5 V [V] CE 1,5 2,0 2,5 3,0 3 3,0 3,5 4 125°C vj 4,0 4,5 5,0 DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 5

... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 600 500 400 300 200 100 0 0,0 0,5 BSM300GB120DLC 20V CE Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125°C 1,0 1,5 2 2,5 3,0 DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 6

... C off C V =±15V 600V 200 300 400 I [ off V =±15V , I = 300A , V = 600V , ( rec C = 125°C 500 600 ) , rec G = 125° DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 7

... IC,Modul 400 IC,Chip 300 200 100 0 0 200 BSM300GB120DLC (t) thJC 0 21,02 25,19 6,499E-02 2,601E-02 52,55 62,97 6,499E-02 2,601E- 400 600 800 V [ (9) Zth:Diode Zth:IGBT 2,85 0,94 2,364E-03 1,187E-05 7,13 2,35 2,364E-03 1,187E-05 = ±15V 3 125° 1000 1200 1400 DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GB120DLC 8 (9) DB_BSM300GB120DLC_3.0 2003-01-29 ...

Page 9

... Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip Gehäusemaße C-Serie Package outline C-series BSM300GB120DLC L terminals 2-3 CE pro Zweig/per arm R CC‘+EE‘ T =25° (9) typ. 425 20 nH 0,6 m DB_BSM300GB120DLC_3.0 2003-01-29 ...

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