PA28F016S5-85 Intel Corporation, PA28F016S5-85 Datasheet
PA28F016S5-85
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PA28F016S5-85 Summary of contents
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VOLT FlashFile™ MEMORY 28F004S5, 28F008S5, 28F016S5 (x8) n SmartVoltage Technology 5 Volt Flash and High-Performance 85 ns Read Access Time n Enhanced Data Protection Features Absolute Protection ...
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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box5937 Denver, CO 80217-9808 or call 1-800-548-4725 or visit Intel’s Website at http://\www.intel.com COPYRIGHT © INTEL CORPORATION 1997, 1998, 1999 Other brands and names are the property of their respective owners * CG-041493 ...
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INTRODUCTION..............................................5 8.1 New Features.............................................5 8.2 Product Overview .......................................5 8.3 Pinout and Pin Description .........................6 8.4 PRINCIPLES OF OPERATION ...................10 8.5 Data Protection ........................................10 8.6 BUS OPERATION .......................................10 8.7 Read ........................................................10 8.8 Output Disable .........................................10 8.9 Standby....................................................10 8.10 Deep Power-Down ...
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REVISION HISTORY Number -001 Original version -002 Table 3 revised to reflect change in abbreviations from “W” for write to “P” for program. Ordering information graphic (Section 7.0) corrected: from PB = Ext. Temp. 44-Lead PSOP to ...
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INTRODUCTION This datasheet contains 4-, 8-, and 16-Mbit 5 Volt FlashFile memory specifications. Section provides a flash memory overview. Sections 2.0, through 5.0 describe the memory organization and functionality. Section 6.0 covers specifications for commercial and temperature product offerings. ...
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To protect programmed data, each block can be locked. This block locking mechanism uses a combination of bits, block lock-bits and a master lock-bit, to lock and unlock individual blocks. The block lock-bits gate block erase and ...
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Table 1. Pin Descriptions Sym Type A –A INPUT ADDRESS INPUTS: Inputs for addresses during read and write operations Addresses are internally latched during a write cycle Mbit A DQ –DQ INPUT/ DATA INPUT/OUTPUTS: Inputs ...
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PRINCIPLES OF OPERATION The 5 Volt FlashFile memories include an on-chip WSM to manage block erase, program, and lock-bit configuration functions. It allows for: 100% TTL- level control inputs, fixed power supplies during block erasure, program, and lock-bit configuration, ...
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Data Protection Depending on the application, the system designer may choose to make the V power supply PP switchable (available only when memory block erases, programs, or lock-bit configurations are required) or hardwired ...
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Block 31 Reserved for Future Implementation 1F0002 Block 31 Lock Configuration Reserved for Future Implementation 1F0000 (Blocks 16 through 30) 0FFFFF Block 15 Reserved for Future Implementation Block 15 Lock Configuration 0F0002 Reserved for Future Implementation 0F0000 (Blocks 8 ...
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Table 2. Bus Operations Mode Notes RP# Read 1,2 Output Disable Standby Deep Power-Down Read Identifier Codes ...
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Table 3. Command Definitions Bus Cycles Command Req’d. Read Array/Reset 1 Read Identifier Codes 2 Read Status Register 2 Clear Status Register 1 Block Erase 2 Program 2 Block Erase and Program 1 Suspend Block Erase and Program 1 Resume ...
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Read Array Command Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled ...
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Block preconditioning, erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written, the device automatically outputs status register data when read (see Figure 6). The CPU can detect block ...
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V level used for block erase) while PP block erase is suspended. RP# must also remain (the same RP# level used for block IH HH erase). Block erase cannot resume until ...
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Clear block lock-bits operation is initiated using a two-cycle command sequence. A clear block lock-bits setup is written first. Then, the device automatically outputs status register data when read (see Figure 11). The CPU can detect completion of the clear ...
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Table 6. Status Register Definition WSMS ESS ECLBS SR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy SR.6 = ERASE SUSPEND STATUS 1 = Block Erase Suspended 0 = Block Erase ...
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Start Write 20H, Block Address Write D0H, Block Address Read Status Register Suspend Block Erase Loop No 0 Suspend SR.7 = Block Erase Yes 1 Full Status Check if Desired Block Erase Complete FULL STATUS CHECK PROCEDURE Read Status Register ...
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Start Write 40H, Address Write Byte Data and Address Read Status Register Suspend Program Loop No 0 Suspend SR.7 = Program 1 Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data ...
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Start Write B0H Read Status Register 0 SR SR.6 = Block Erase Completed 1 Read Program Read or Program ? Program Read Array No Loop Data Done? Yes Write D0H Write FFH Block Erase Resumed Read Array ...
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Start Write B0H Read Status Register 0 SR Program Completed SR Write FFH Read Array Data No Done Reading Yes Write D0H Write FFH Program Resumed Read Array Data Figure 9. Program ...
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Start Write 60H, Block/Device Address Write 01H/F1H, Block/Device Address Read Status Register 0 SR Full Status Check if Desired Set Lock-Bit Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above Range Error ...
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Start Write 60H Write D0H Read Status Register 0 SR Full Status Check if Desired Clear Block Lock-Bits Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above Range Error ...
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DESIGN CONSIDERATIONS 5.1 Three-Line Output Control Intel provides three control inputs to accommodate multiple memory connections: CE#, OE#, and RP#. Three-line control provides for: a. Lowest possible memory power dissipation. b. Data bus contention avoidance. To use these control ...
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ELECTRICAL SPECIFICATIONS 6.1 Absolute Maximum Ratings* Temperature under Bias .............. –10 °C to +80 °C Storage Temperature................. –65 °C to +125 °C Voltage On Any Pin (except V and RP#) ......... –2 +7.0 V ...
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DC Characteristics— Commercial Temperature Sym Parameter Notes I Input Load Current Output Leakage Current Standby Current 1,3,6 CCS Deep Power-Down 1 CCD CC Current I V Read Current 1,5,6 ...
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DC Characteristics— Commercial Temperature Sym Parameter Notes V Input Low Voltage Input High Voltage Output Low Voltage 3 Output High Voltage 3,7 OH1 (TTL) V Output High Voltage ...
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INPUT 1.5 0.0 AC test inputs are driven at 3.0 V for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at 1.5 V. Input rise and fall times (10% to ...
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V IH RY/BY# ( RP# ( Figure 15. AC Waveform for Reset Operation Table 7. Reset Specifications # Sym P1 t RP# Pulse Low Time PLPH (If RP# is tied ...
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AC Characteristics— Read-Only Operations °C to +70 °C A Versions (4) # Sym Parameter R1 t Read Cycle Time 4, 8 Mbit AVAV 16 Mbit R2 t Address to Output 4, 8 Mbit AVQV 16 Mbit ...
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Standby V IH ADDRESSES ( CE# ( OE# ( WE# ( DATA (D/Q) High Z (DQ0-DQ7 ...
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AC Characteristics— Write Operations °C to +70 °C A Versions (4) # Sym RP# High Recovery to WE# (CE#) Going Low PHWL PHEL CE# (WE#) Setup to WE# ...
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ADDRESSES [ CE# (WE#) [E(W OE# [ WE# (CE#) [W(E ...
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Block Erase, Program, and Lock-Bit Configuration Performance Commercial Temperature ± 0 ± 0. °C to +70 ° Sym Parameter W16 t Program Time WHRH1 t ...
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Extended Temperature Operating Conditions Except for the specifications given in this section, all DC and AC characteristics are identical to those given in commercial temperature specifications. See the Section 6.2 for commercial temperature specifications. Extended Temperature ...
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... Voltage Options ( Volt Flash Product Family S = FlashFile™ Memory Valid Operational 10 Mbit 100 pF load E28F016S5-85 –90/–100 E28F016S5-120 –120 E28F016S5 (2) –120 PA28F016S5-85 –90/–100 PA28F016S5-120 –120 Extended Temperature TE28F016S5-110 –100/–110 TB28F016S5-110 –100/–110 / V/5 V and 12 V) Combinations ...
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ADDITIONAL INFORMATION Order Number 290598 3 Volt FlashFile™ Memory; 28F004S3, 28F008S3, 28F016S3 datasheet AP-374 Flash Memory Write Protection Techniques 292123 297796 5 Volt FlashFile™ Memory/28F004S5, 28F008S5, 28F016S5 Specification Update Note 3 AP-625 28F008SC Compatibility with 28F008SA ...