BSM100GB120DN2K Eupec GmbH, BSM100GB120DN2K Datasheet

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BSM100GB120DN2K

Manufacturer Part Number
BSM100GB120DN2K
Description
Manufacturer
Eupec GmbH
Datasheet

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Part Number:
BSM100GB120DN2K
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM100GB120DN2K
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM100GB120DN2K
Quantity:
50
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Part Number:
BSM100GB120DN2K
Quantity:
80
BSM 100 GB 120 DN2K
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2K
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 145A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2107-A70
+ 150
± 20
1200
1200
2500
145
100
290
200
700
0.18
0.36
F
20
11
Oct-21-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM100GB120DN2K Summary of contents

Page 1

BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

BSM 100 GB 120 DN2K Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...

Page 3

BSM 100 GB 120 DN2K Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 V, ...

Page 4

BSM 100 GB 120 DN2K Power dissipation = ( tot C parameter: T 150 °C j 750 W 650 600 P tot 550 500 450 400 350 300 250 200 150 100 ...

Page 5

BSM 100 GB 120 DN2K Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...

Page 6

BSM 100 GB 120 DN2K Typ. gate charge = ( Gate parameter 100 A C puls 600 100 200 300 ...

Page 7

BSM 100 GB 120 DN2K Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 100 GB 120 DN2K Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 ...

Page 9

BSM 100 GB 120 DN2K Package Outlines Dimensions in mm Weight: 250 g Circuit Diagram 9 Oct-21-1997 ...

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