MBM29DL324BE90TN Meet Spansion Inc., MBM29DL324BE90TN Datasheet
MBM29DL324BE90TN
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MBM29DL324BE90TN Summary of contents
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MBM29DL32XTE/BE Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet ...
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This page left intentionally blank MBM29DL32XTE/BE_DS05-20881-8E July 20, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE ■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each ...
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In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under this concept, the MBM29DL32XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size combinations; 4 Mb/28 Mb, 8 Mb/24 Mb, ...
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MBM29DL32XTE/BE ■ FEATURES • 0.23 μm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in “■ FEATURES”) Host system can program or erase in one bank, then ...
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Sector Group Protection Set function by Extended sector group protection command • Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash ...
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MBM29DL32XTE/BE ■ PIN ASSIGNMENTS RESET N.C. WP/ACC RY/ ...
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N.C. N. N.C. N. RESET C4 D4 RY/BY WP/ACC ...
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MBM29DL32XTE/BE ■ PIN DESCRIPTIONS Pin Name RY/BY RESET BYTE WP/ACC N. MBM29DL32XTE/BE Pin Configuration Function Address ...
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BLOCK DIAGRAM Bank 2 Address RESET State WE Control CE & OE Command BYTE Register WP/ACC Bank 1 Address ■ LOGIC SYMBOL ...
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MBM29DL32XTE/BE ■ DEVICE BUS OPERATION MBM29DL32XTE/BE User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code* 1 Auto-Select Device Code* Read* 3 Standby Output Disable Write (Program/Erase) Enable Sector Group Protection* Verify Sector Group Protection* 2, Temporary Sector Group Unprotection* ...
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MBM29DL32XTE/BE User Bus Operations (BYTE = V Operation Auto-Select Manufacturer Code* 1 Auto-Select Device code* 1 Read* 3 Standby Output Disable Write (Program/Erase) Enable Sector Group Protection * Verify Sector Group Protection Temporary Sector ...
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MBM29DL32XTE/BE Bus First bus write Command write cycle cy- sequence cles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data req’d Word Read/ 1 XXXh 1 Reset* Byte 555h Word Read/ 3 Reset* 1 AAAh Byte 555h ...
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Bus First bus write Command write cycle cy- sequence cles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data req’d Word 555h HiddenROM 3 AAh Entry AAAh Byte Word 555h HiddenROM 4 AAh Program * 5 ...
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MBM29DL32XTE/BE • Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. • The command combinations not described in “MBM29DL32XTE/BE Command Definitions” are illegal. In case of applying since both Bank 1 and ...
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MBM29DL323TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL323TE Word Device Code Byte MBM29DL323BE Word Sector Group Protection * for Byte mode. At Byte mode Outputs 01h at protected sector ...
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MBM29DL32XTE/BE MBM29DL324TE/BE Sector Group Protection Verify Autoselect Codes Type Manufacture’s Code Byte MBM29DL324TE Word Device Code Byte MBM29DL324BE Word Sector Group Protection * for Byte mode. At Byte mode Outputs 01h at protected ...
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FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29DL322TE) Sector address Sec- Bank Bank address tor SA0 SA1 SA2 0 ...
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MBM29DL32XTE/BE Sector address Sec- Bank Bank address tor SA33 SA34 SA35 SA36 ...
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Sector address Sec- Bank Bank address tor SA67 SA68 Bank 1 SA69 SA70 ...
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MBM29DL32XTE/BE Sector address Sec- Bank Bank address tor SA48 SA47 SA46 SA45 ...
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Sector address Sec- Bank Bank address tor SA14 SA13 SA12 SA11 0 0 ...
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MBM29DL32XTE/BE Sector address Sec- Bank Bank address tor SA0 SA1 SA2 SA3 ...
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Sector address Sec- Bank Bank address tor SA33 SA34 SA35 SA36 ...
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MBM29DL32XTE/BE (Continued) Sector address Sec- Bank Bank address tor SA67 SA68 Bank 1 SA69 SA70 1 ...
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Sector address Sec- Bank Bank address tor SA48 SA47 SA46 SA45 ...
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MBM29DL32XTE/BE (Continued) Sector address Sec- Bank Bank address tor SA14 SA13 SA12 SA11 ...
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Sector Address Table (MBM29DL324TE) Sector address Sec- Bank Bank address tor SA0 SA1 SA2 ...
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MBM29DL32XTE/BE Sector address Sec- Bank Bank address tor SA32 SA33 SA34 SA35 ...
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Sector address Sec- Bank Bank address tor SA66 SA67 Bank SA68 SA69 ...
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MBM29DL32XTE/BE Sector address Sec- Bank Bank address tor SA49 SA48 SA47 SA46 ...
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Sector address Sec- Bank Bank address tor SA15 SA14 SA13 SA12 0 0 ...
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MBM29DL32XTE/BE Sector group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 1 SGA6 0 1 SGA7 0 1 SGA8 0 1 SGA9 1 0 SGA10 1 0 ...
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Sector Group Addresses (MBM29DL32XBE) Sector group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 ...
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MBM29DL32XTE/BE Description Query-unique ASCII string “QRY” Primary OEM Command Set 02h : AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V Min (write/erase ...
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Description Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 00h = Required Erase Suspend 02h = To Read & Write Sector Protection 00h = Not Supported X = Number of sectors in ...
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MBM29DL32XTE/BE ■ FUNCTIONAL DESCRIPTION • Simultaneous Operation MBM29DL32XTE/BE have feature, which is capability of reading data from one bank of memory while a program or erase operation is in progress in the other bank of memory (simultaneous operation ...
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CE = “H”. The device can be read with standard access time (t active current (I CC2 of these standby modes. When using the RESET pin only, a CMOS standby mode is achieved with RESET input ...
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MBM29DL32XTE/BE • Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself ...
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RESET Hardware Reset The MBM29DL32XTE/BE devices may be reset by driving the RESET pin to V requirement and has to be kept low (V Any operation in the process of being executed will be terminated and the internal state ...
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MBM29DL32XTE/BE ■ COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Some commands are required Bank Address (BA) input. When command sequences are inputted to bank being read, the commands have priority ...
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If the software (program code) for Autoselect command is stored into the Flash memory, the device and man- ufacture codes should be read from the other bank where is not contain the software. To terminate the operation necessary ...
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MBM29DL32XTE/BE Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more infor- mation. The system must write the Program Resume command (address bits are “Bank Address”) to exit from the Program Suspend mode and continue ...
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Data polling and Toggle Bit must be performed at an address within any of the sectors being erased. Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time ...
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MBM29DL32XTE/BE (2) Fast Programming During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD) . (Refer to the “Extended Sector ...
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When reading the HiddenROM region, either change addresses or change CE pin from “H” to “L”. The same procedure should be taken (changing addresses or CE pin from “H” to “L”) after the system issues the Exit HiddenROM command sequence ...
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MBM29DL32XTE/BE • Write Operation Status Detailed in “Hardware Sequence Flags” in “■ COMMAND DEFINITIONS” are all the status flags that can determine the status of the bank for the current mode operation. The read operation from the bank where is ...
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Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ for Data Polling ( shown in “Data Polling Algorithm” in “■ FLOW CHART”. 7 For programming, the Data Polling is valid after ...
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MBM29DL32XTE/BE • Exceeded Timing Limits DQ will indicate if the program or erase time has exceeded the specified limits (internal pulse count) . Under 5 these conditions DQ will produce a “1”. This is a failure condition which ...
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Reading Toggle Bits DQ / Whenever the system initially begins reading toggle bit status, it must read DQ to determine whether a toggle bit is toggling. Typically a system would note and store the value of the toggle ...
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MBM29DL32XTE/BE • Data Protection The MBM29DL32XTE/BE are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the devices automat- ically reset the internal state machine ...
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ABSOLUTE MAXIMUM RATINGS (See WARNING) Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A , OE, RESET * Power Supply Voltage * OE, and ...
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MBM29DL32XTE/BE ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V −0.5 V − +2.0 V +14.0 V +13 0 Note : This waveform is applied for A ...
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DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage Current 9 WP/ACC Accelerated Program Current V Active Current * Active Current * Current (Standby Current ...
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MBM29DL32XTE/BE ■ AC CHARACTERISTICS Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time from Addresses OE, ...
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Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold ...
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MBM29DL32XTE/BE (Continued) Parameter RESET High Level Period before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-Out Time Erase Suspend Transition Time *1 ...
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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Program/Erase Cycle 100,000 ■ PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Notes : • Test conditions ...
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MBM29DL32XTE/BE ■ TIMING DIAGRAM • Key to Switching Waveforms Address Outputs WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May ...
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Address RESET High-Z Outputs Hardware Reset/Read Operation Timing Diagram Retired Product DS05-20881-8E_July 20, 2007 MBM29DL32XTE/ Address Stable t ACC t CE Outputs Valid ...
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MBM29DL32XTE/BE 3rd Bus Cycle Address 555h GHWL A0h Data Notes : • address of the memory location to be programmed. • data to be ...
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Bus Cycle Address 555h GHEL Data A0h Notes : • address of the memory location to be programmed. • data to be programmed ...
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MBM29DL32XTE/BE Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) , AAAh (Byte) for Chip Erase. Note : These waveforms are for ...
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OEH WE Data DQ 7 Data BUSY RY/BY = Valid Data (The device has completed the Embedded operation Data Polling during Embedded Algorithm Operation ...
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MBM29DL32XTE/BE Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation Toggle Bit I during Embedded Algorithm Operation Timing Diagram ...
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Read Command t RC Address BA1 GHWL WE Valid DQ Output Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1 : Address corresponding to Bank 1 ...
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MBM29DL32XTE/ RY/BY RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/ Rising edge of the last WE signal Entire programming or erase operations t BUSY READY RESET, RY/BY Timing ...
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CE BYTE Data Output ( ELFH t FHQV Timing Diagram for Word Mode Configuration CE BYTE t ELFL Data Output ( ...
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MBM29DL32XTE/ VLHT ...
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VIDR t VCS RESET VLHT RY/BY Temporary Sector Group Unprotection Timing Diagram Retired Product DS05-20881-8E_July 20, 2007 MBM29DL32XTE/BE Program or Erase Command Sequence Unprotection period VLHT t ...
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MBM29DL32XTE/ VCS RESET t VLHT t VIDR Address Data SPAX : Sector Group Address to be protected SPAY : Next Sector Group Address to be protected TIME-OUT ...
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VACCR t VCS V ACC V IH WP/ACC VLHT RY/BY Accelerated Program Timing Diagram MBM29DL32XTE/BE Program Command Sequence Acceleration period Retired Product DS05-20881-8E_July 20, 2007 VLHT t VLHT 73 ...
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MBM29DL32XTE/BE ■ FLOW CHART EMBEDDED ALGORITHM Increment Address Notes : • The sequence is applied for ×16 mode. • The addresses differ from ×8 mode Start Write Program Command Sequence (See Below) Data Polling No Verify ...
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EMBEDDED ALGORITHM No Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes : • The sequence is applied for ×16 mode. • The addresses differ from ×8 mode. MBM29DL32XTE/BE Start Write Erase Command Sequence (See Below) Data ...
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MBM29DL32XTE/ rechecked even Address for programming Start Read Byte ( Addr Yes = Data ...
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Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ Retired Product DS05-20881-8E_July 20, 2007 MBM29DL32XTE/BE Start *1 Read Addr. = ...
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MBM29DL32XTE/BE Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode Start Setup Sector Group Addr ...
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All protected sector groups are unprotected All previously protected sector groups are protected once again. Temporary Sector Group Unprotection Algorithm Retired Product DS05-20881-8E_July 20, 2007 MBM29DL32XTE/BE Start RESET = Perform Erase or Program Operations ...
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MBM29DL32XTE/BE Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Extended Sector Group Protection Algorithm Start RESET = V ...
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FAST MODE ALGORITHM Increment Address Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. Embedded Programming Algorithm for Fast Mode Retired Product DS05-20881-8E_July 20, 2007 MBM29DL32XTE/BE Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data ...
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Part No. MBM29DL322BE80PBT MBM29DL322BE90PBT MBM29DL323BE80PBT MBM29DL323BE90PBT MBM29DL324BE90PBT MBM29DL32X T E DEVICE NUMBER/DESCRIPTION MBM29DL32X 32 Mega-bit (4 M × 8-Bit × 16-Bit) CMOS Dual Operation Flash Memory 3.0 V-only Read, Program, and Erase MBM29DL32XTE/BE Package Access Time ...
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MBM29DL32XTE/BE ■ PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 Note Values do not include resin protrusion. ...
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Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M20) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX ...
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MBM29DL32XTE/BE (Continued) 63-ball plastic FBGA (BGA-63P-M01) 11.00±0.10(.433±.004) INDEX AREA 0.10(.004) 2001 FUJITSU LIMITED B63001S-c-2 +0.15 1.05 –0.10 +.006 .041 –.004 (Mounting height) 0.38±0.10 (.015±.004) (Stand off) (4.00(.157)) 7.00±0.10 (.276±.004) (5.60(.220 Dimensions in mm ...
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Revision History Revision DS05-20881-8E（July 20, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29DL32XTE/BE Retired Product DS05-20881-8E_July 20, 2007 ...
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MBM29DL32XTE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...