MBM29LV160T-90PFTN Meet Spansion Inc., MBM29LV160T-90PFTN Datasheet
MBM29LV160T-90PFTN
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MBM29LV160T-90PFTN Summary of contents
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... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29LV160T/MBM29LV160B / -80/-90/-12 Revision DS05-20846-7E ...
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... This page left intentionally blank MBM29LV160T/MBM29LV160B_DS05-20846-7E July 26, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... MBM29LV160T ■ GENERAL DESCRIPTION The MBM29LV160T 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3 ...
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... The MBM29LV160T/B also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read mode and will have erroneous data stored in the address locations being programmed or erased ...
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... MBM29LV160T -80/-90/-12 (Continued) • Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode write inhibit ≤ 2.5 V • Low V CC • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector protection Hardware method disables any combination of sectors from program or erase operations • ...
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... MBM29LV160T ■ PIN ASSIGNMENTS N.C. WE RESET N.C. N.C. RY/ RY/BY N.C. N.C. RESET WE N. ...
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... MBM29LV160T -80/-90/-12 (Continued) RY/BY RESET /MBM29LV160B (TOP VIEW ...
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... MBM29LV160T ■ PIN DESCRIPTIONS Pin Name Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector Unprotection BYTE Selects 8-bit or 16-bit mode N.C. Pin Not Connected Internally V Device Ground ...
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... MBM29LV160T -80/-90/-12 ■ BLOCK DIAGRAM RY/BY Buffer State Control BYTE RESET Command Register CE OE Low V Detector ■ LOGIC SYMBOL 10 /MBM29LV160B RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase ...
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... Refer to the section on Sector Protection can 3.3 V ±10 also used for the extended sector protection. MBM29LV160T/B User Bus Operation Table (BYTE = V Operation 1 Auto-Select Manufacture Code * Auto-Select Device Code * 1 Read * 3 Standby Output Disable ...
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... X = “H” or “L” for all address commands except or Program Address (PA) and Sector 19 11 Address (SA). *2: Bus operations are defined in “MBM29LV160T/B User Bus Operation Tables (BYTE = V *3: RA= Address of the memory location to be read Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. ...
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... MBM29LV160T MBM29LV160T/B Extended Command Definitions Table Bus Command Write Sequence Cycles Req'd Word Set to Fast 3 Mode Byte Word 1 2 Fast Program * Byte Word Reset from Fast 2 Mode * 1 Byte Word Query 2 Command * 2 Byte Word Extended Sector 4 Protect * 3 Byte SPA : Sector Address to be protected. Set sector address (SA) and ( Sector protection verify data ...
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... MBM29LV160T -80/-90/-12 MBM29LV160T/B Sector Protection Verify Autoselect Code Table Type Manufacture’s Code MBM29LV160T Device Code MBM29LV160B Sector Protection * for Byte mode. At Byte mode *2: Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. Type Code DQ Manufacture’s Code ...
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... One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode. • One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode. • Individual-sector, multiple-sector, or bulk-erase capability. • Individual or multiple-sector protection is user definable. MBM29LV160T Top Boot Sector Architecture Sector Sector Size SA0 ...
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... MBM29LV160T -80/-90/-12 MBM29LV160B Bottom Boot Sector Architecture Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords SA3 32 Kbytes or 16 Kwords SA4 64 Kbytes or 32 Kwords SA5 64 Kbytes or 32 Kwords SA6 64 Kbytes or 32 Kwords SA7 64 Kbytes or 32 Kwords ...
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... MBM29LV160T Sector Address Table (MBM29LV160T) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...
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... MBM29LV160T -80/-90/-12 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 ...
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... MBM29LV160T Common Flash Memory Interface Code Table Description Query-unique ASCII string 10h “QRY” 11h 12h Primary OEM Command Set 13h 02h: AMD/FJ standard type 14h Address for Primary 15h Extended Table 16h Alternate OEM Command 17h Set (00h = not applicable) ...
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... DIAGRAM for timing specifications. Standby Mode There are two ways to implement the standby mode on the MBM29LV160T/B devices. One is by using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V Under this condition the current consumed is less than 5 µ ...
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... IL For the MBM29LV160T/B these two bytes are given in “Extended Autoselect Code Table” (in ■DEVICE BUS OPERATION). All identifiers for manufactures and device will exhibit odd parity with DQ bit. In order to read the proper device codes when executing the Autoselect, A “ ...
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... Following the last command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for ×16 (XX02h for ×8) retrieves the device code (MBM29LV160T = C4h and MBM29LV160B = 49h for ×8 mode; MBM29LV160T = 22C4h and MBM29LV160B = 2249h for ×16 mode). (See “ ...
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... WE. After a time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing six-bus cycle operations on “MBM29LV160T/B Standard Command Definitions” in ■DEVICE BUS OPERATION. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...
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... Extended Command (1) Fast Mode MBM29LV160T/B has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... Code Table” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE. To terminate operation necessary to write the read/reset command sequence into the register. (4) Extended Sector Protect In addition to normal sector protection, the MBM29LV160T/B has Extended Sector Protection as extended function. This function enable to protect sector by forcing V Unlike conventional procedure not necessary to force V RESET pin requires V for sector protection in this mode ...
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... DQ 6 Toggle Bit I The MBM29LV160T/B also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... MBM29LV160T The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ and DQ 7 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly used. ...
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... RY/BY Ready/Busy Pin The MBM29LV160T/B provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation ...
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... MBM29LV160T the V level is greater than the users responsibility to ensure that the control pins are logically correct CC LKO to prevent unintentional writes when V If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be erased again prior to programming. ...
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... GND = +2.0 V for periods ns OE, and RESET pins is –0.5 V. During voltage transitions Symbol Part number MBM29LV160T/B- MBM29LV160T/B-90/-12 MBM29LV160T/B- MBM29LV160T/B-90/-12 = GND = Retired Product DS05-20846-7E_July 26, 2007 -80/-90/-12 Rating Unit Min Max −55 +125 °C −40 +85 °C −0.5 +0 ...
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... MBM29LV160T ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note : This waveform is applied for A /MBM29LV160B -80/-90/- Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 Retired Product DS05-20846-7E_July 26, 2007 ...
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... MBM29LV160T -80/-90/-12 ■ DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, RESET Current CC (Automatic Sleep Mode Input Low Voltage Input High Voltage Voltage for Autoselect,Sector ...
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... Output Hold Time From Address OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High * : Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV160T/B-80/-90) 1 TTL gate and 100 pF (MBM29LV160T/B-12) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...
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... MBM29LV160T -80/-90/-12 • Write (Erase/Program) Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Output Enable Hold Toggle and Time Data Polling Read Recover Time Before Write Read Recover Time Before ...
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... MBM29LV160T ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle ■ TSOP (1) PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Note : DQ /A- pin capacitance is stipulated by output capacitance ■ CSOP PIN CAPACITANCE ...
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... MBM29LV160T -80/-90/-12 ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 36 /MBM29LV160B WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...
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... MBM29LV160T (2) AC Waveforms for Hardware Reset/Read Operations Address t RH RESET High-Z Outputs (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL A0h Data Notes : • address of the memory location to be programmed. ...
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... MBM29LV160T -80/-90/-12 (4) AC Waveforms for Alternate CE Controlled Program Operations Address Data Notes : • address of the memory location to be programmed. • data to be programmed at word address. • the output of the complement of the data written to the device. 7 • the output of the data written to the device. ...
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... MBM29LV160T (5) AC Waveforms for Chip/Sector Erase Operations Address 555h GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAAh (Byte) for Chip Erase. Note: These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) ...
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... MBM29LV160T -80/-90/-12 (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation.) 7 (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations OES OE DQ Data ...
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... MBM29LV160T (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET, RY/BY Timing Diagram WE RESET RY/BY (10) Timing Diagram for Word Mode Configuration CE BYTE ELFH /MBM29LV160B -80/-90/-12 Rising edge of the last WE signal Entire programming or erase operations t BUSY READY t CE Data Output ...
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... MBM29LV160T -80/-90/-12 (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL (12) BYTE Timing Diagram for Write Operations CE WE BYTE 42 /MBM29LV160B Data Output ( ACC FLQZ Falling edge of the last WE signal Input Valid Retired Product ...
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... MBM29LV160T (13) AC Waveforms for Sector Protection Timing Diagram SPAX VLHT VLHT WE t CSP CE Data t VCS V CC SPAX = Sector Address for initial sector SPAY = Sector Address for next sector ...
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... MBM29LV160T -80/-90/-12 (14) Extended Sector Protection Timing Diagram VCS RESET t Address Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-out Window = 150 µs (Min) 44 /MBM29LV160B t VIDR VLHT SPAX t WP TIME OUT ...
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... MBM29LV160T (15) Temporary Sector Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY (16 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with read from the erase-suspended sector. 2 /MBM29LV160B -80/-90/-12 t Program or Erase Command Sequence ...
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... MBM29LV160T -80/-90/-12 ■ FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes : • The sequence is applied for ×16 mode. • The addresses differ from ×8 mode. 46 /MBM29LV160B Start Write Program Command Sequence (See Below) Data Polling NO Verify Data ? YES NO Last Address ...
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... MBM29LV160T (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Addresss/Command) : 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. /MBM29LV160B -80/-90/-12 Start Write Erase Command Sequence (See Below) Data Polling Embedded ...
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... MBM29LV160T -80/-90/-12 (3) Data Polling Algorithm * : DQ is rechecked even /MBM29LV160B VA =Address for programming =Any of the sector addresses Start Read Byte =Any of the sector addresses ( Addr Yes DQ = Data Yes Read Byte ( Addr Yes DQ = Data ...
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... MBM29LV160T (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ /MBM29LV160B -80/-90/-12 Start *1 Read ( Addr. = “H” or “L” *1 Read ( Addr. = “H” or “L” Toggle ? Yes ...
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... MBM29LV160T -80/-90/-12 (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode /MBM29LV160B Start Setup Sector Addr 19 PLSCNT = RESET = ...
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... MBM29LV160T (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. /MBM29LV160B -80/-90/-12 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed *2 Retired Product DS05-20846-7E_July 26, 2007 -80/-90/-12 51 ...
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... MBM29LV160T -80/-90/-12 (7) Embedded Programming Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for ×16 mode. • The addresses differ from ×8 mode. 52 /MBM29LV160B Start 555h/AAh 2AAh/55h 555h/20h XXXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes ...
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... MBM29LV160T (8) Extended Sector Protect Algorithm FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotect Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed /MBM29LV160B -80/-90/-12 Start RESET = V ID Wait to 4 µs No Extended Sector Protect Entry? Yes To Setup Sector Protect ...
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... MBM29LV160T -80/-90/-12 ■ ORDERING INFORMATION MBM29LV160 T -80 DEVICE NUMBER/DESCRIPTION MBM29LV160 16 Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Write, and Erase 54 /MBM29LV160B PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP (1) ) Normal Bend PFTR = 48-Pin Thin Small Outline Package ...
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... MBM29LV160T Part No. MBM29LV160T-80PFTN 48-pin plastic TSOP(1) MBM29LV160T-90PFTN MBM29LV160T-12PFTN MBM29LV160T-80PFTR 48-pin plastic TSOP(1) MBM29LV160T-90PFTR MBM29LV160T-12PFTR MBM29LV160T-80PCV 48-pin plastic CSOP MBM29LV160T-90PCV MBM29LV160T-12PCV MBM29LV160T-80PBT 48-ball plastic FBGA MBM29LV160T-90PBT MBM29LV160T-12PBT MBM29LV160B-80PFTN 48-pin plastic TSOP(1) MBM29LV160B-90PFTN MBM29LV160B-12PFTN MBM29LV160B-80PFTR 48-pin plastic TSOP(1) MBM29LV160B-90PFTR MBM29LV160B-12PFTR MBM29LV160B-80PCV 48-pin plastic CSOP ...
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... MBM29LV160T -80/-90/-12 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 /MBM29LV160B Note Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15 (.006) Max (each side) . Note 2) Pins width and pins thickness include plating thickness. ...
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... MBM29LV160T Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M20) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 ± 0.20 (.724 ± .008) 20.00 ± 0.20 (.787 ± ...
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... MBM29LV160T -80/-90/-12 48-pin plastic CSOP (LCC-48P-M03) 48 INDEX LEAD No 10.00±0.10(.394±.004) 0.40(.016) 9.20(.362)REF 2003 FUJITSU LIMITED C48056S-c-2 /MBM29LV160B Note Resin protrusion. (Each side : +0.15 (.006) Max) . Note These dimensions do not include resin protrusion. Note 3) Pins width includes plating thickness. ...
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... MBM29LV160T (Continued) 48-ball plastic FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48013S-c-3-2 C /MBM29LV160B -80/-90/-12 +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00±0.20 4.00(.157) (.315±.008) H Dimensions in mm (inches) Note : The values in parentheses are reference values. ...
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... MBM29LV160T -80/-90/-12 MEMO 60 /MBM29LV160B Retired Product DS05-20846-7E_July 26, 2007 -80/-90/-12 ...
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... MBM29LV160T MEMO Retired Product DS05-20846-7E_July 26, 2007 /MBM29LV160B -80/-90/-12 -80/-90/-12 61 ...
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... MBM29LV160T -80/-90/-12 MEMO 62 /MBM29LV160B Retired Product DS05-20846-7E_July 26, 2007 -80/-90/-12 ...
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... MBM29LV160T Revision History Revision DS05-20846-7E（July 26, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29LV160B -80/-90/-12 Retired Product DS05-20846-7E_July 26, 2007 -80/-90/-12 63 ...
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... MBM29LV160T -80/-90/-12 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94088-3470, U ...