MBM29PL160BD-75PFTN Meet Spansion Inc., MBM29PL160BD-75PFTN Datasheet
MBM29PL160BD-75PFTN
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MBM29PL160BD-75PFTN Summary of contents
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MBM29PL160TD/BD Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet ...
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This page left intentionally blank MBM29PL160TD/BD_DS05-20872-4E July 31, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29PL160TD/BD ■ DESCRIPTION The MBM29PL160TD/ M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or 1M ...
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The standard MBM29PL160TD/BD offers access times and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. ...
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MBM29PL160TD/BD ■ FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with MASK ROM pinouts 48-pin TSOP (1) (Package suffix: PFTN-Normal Bend ...
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PIN ASSIGNMENTS SOP (Marking Side N. ...
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MBM29PL160TD/BD ■ PIN DESCRIPTIONS Pin name Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable BYTE Selects 8-bit or 16-bit mode V Device ...
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BLOCK DIAGRAM State WE Control BYTE Command Register CE OE Low V Detector ■ LOGIC SYMBOL MBM29PL160TD/BD Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable ...
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MBM29PL160TD/BD ■ DEVICE BUS OPERATIONS MBM29PL160TD/BD User Bus Operation Table (BYTE = V Operation Auto-Select Manufacture Code * 1 Auto-Select Device Code * Read * 3 Standby Output Disable Write (Program/Erase Enable Sector Protection * * Verify Sector ...
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MBM29PL160TD/BD Standard Command Definitions Table First Bus Bus Command Write Cycle Write Sequence Cycles Req'd Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Word 1 XXXh F0h Read/Reset * 1 /Byte Word 555h 3 Read/Reset * ...
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... The data “00h” is also acceptable. MBM29PL160TD/BD Sector Protection Verify Autoselect Code Table Type Manufacture’s Code MBM29PL160TD Device Code MBM29PL160BD Sector Protection Temporary Sector Unprotection * for Byte mode. -1 *2: Outputs 01h at protected sector addresses and outputs 00h at unprotected sector addresses. ...
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... Type Code DQ 15 Manufacture’s Code* 04h 27h A (B) -1 MBM29PL160TD 0 (W) 2227h Device Code 45h A (B) -1 MBM29PL160BD 0 2245h (W) Sector Protection* 01h Temporary Sector 01h Unprotection (B): Byte mode (W): Word mode HI-Z: High byte mode are High-Z and MBM29PL160TD/BD ...
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... Kbytes or 128 Kwords SA7 224 Kbytes or 112 Kwords SA8 8 Kbytes or 4 Kwords SA9 8 Kbytes or 4 Kwords SA10 16 Kbytes or 8 Kwords MBM29PL160BD Bottom Boot Sector Architecture Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords ...
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... X SA5 SA6 SA7 SA8 SA9 SA10 Sector Address Table (MBM29PL160BD) Sector Address SA0 SA1 SA2 SA3 SA4 0 0 ...
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MBM29PL160TD/BD Common Flash Memory Interface Code Table Description Query-unique ASCII string “QRY” Primary OEM Command Set 2h : AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table ...
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FUNCTIONAL DESCRIPTION Random Read Mode The MBM29PL160TD/BD has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the ...
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... IH the sector to be protected. "Sector Address Table (MBM29PL160TD)" and "Sector Address Table (MBM29PL160BD)" in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the eleven (11) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See " ...
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( will produce a logical “1” at device output device will read 00h for an unprotected sector. In this mode, the lower order addresses, except for ...
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... XX01h for ×16 (XX02h for ×8) retrieves the device code (MBM29PL160TD = 27h and MBM29PL160BD = 45h for ×8 mode; MBM29PL160TD = 2227h and MBM29PL160BD = 2245h for ×16 mode). (See "MBM29PL160TD/BD Sector Protection Verify Autoselect Code Table" and "Expanded Autoselect Code Table" ...
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Controlled Program Operations" and "(4) AC Waveforms for Alternate CE Controlled Program Operations" in ■TIMING DIAGRAM.) The automatic programming operation is completed when the data on DQ bit at which time the device return to the read mode and addresses ...
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MBM29PL160TD/BD controls or timings during these operations. (See "(5) AC Waveforms for Chip/Sector Erase Operations" in ■TIMING DIAGRAM.) The automatic sector erase begins after the 50 µs time out from the rising edge of the pulse for ...
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Extended Command (1) Fast Mode MBM29PL160TD/BD has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus ...
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MBM29PL160TD/ Data Polling The MBM29PL160TD/BD device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices will ...
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DQ 5 Exceeded Timing Limits DQ will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under 5 these conditions DQ will produce a “1”. This is a failure condition which indicates that the ...
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MBM29PL160TD/BD Mode Program Erase Erase Suspend Read (Erase Suspended Sector Erase-Suspend Program *1: Performing successive read operations from any address will cause DQ *2: Reading the byte address being programmed while in the erase-suspend program mode will indicate ...
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ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with respect to Ground All pins except Power Supply Voltage * 1 A and *1: ...
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MBM29PL160TD/BD ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2 +2.0 V +13.5 V +13 +0 Note : This waveform is applied for A 28 -75/ ...
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DC CHARACTERISTICS Parameter Symbol Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * CC V Current (Standby Current CC (Automatic Sleep ...
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MBM29PL160TD/BD ■ AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Page Read Cycle Time Page Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output ...
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Write (Erase/Program) Operations Parameter Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Output Enable Hold Time Toggle and Data Polling Read Recover Time Before Write Read Recover ...
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MBM29PL160TD/BD ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 32 -75/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from ...
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AC Waveforms for Page Read Mode Operations OEH WE High-Z Outputs MBM29PL160TD/BD Address Valid PRC t ACC t ...
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MBM29PL160TD/BD (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL WE t A0h Data Notes: • address of the memory location to be programmed. ...
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AC Waveforms for Alternate CE Controlled Program Operations Address GHEL CE Data Notes: • address of the memory location to be programmed. • data to be programmed at word address. ...
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MBM29PL160TD/BD (5) AC Waveforms for Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note : These ...
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AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data Valid Data (The device has completed the Embedded operation.) 7 (7) AC ...
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MBM29PL160TD/BD (8) Timing Diagram for Word Mode Configuration CE BYTE ELFH (9) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL ...
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AC Waveforms for Sector Protection Timing Diagram SAX ...
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MBM29PL160TD/BD (12 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with read from the erase-suspended sector. 2 ...
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FLOW CHART (1) Embedded Program TM Algorithm Increment Address Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. MBM29PL160TD/BD Start Write Program Command Sequence (See Below) Data Polling Device No Last Address ? ...
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MBM29PL160TD/BD (2) Embedded Erase TM Algorithm Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. 42 -75/90 Start Write Erase Command Sequece (See ...
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Data Polling Algorithm * : DQ is rechecked even MBM29PL160TD/BD VA =Address for programming =Any of the sector addresses Start Read Byte =Any of the sector addresses ( Addr ...
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MBM29PL160TD/BD (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling rechecked even changing to “1”. 44 -75/90 Start *1 Read ( ...
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Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode MBM29PL160TD/BD Start Setup Sector Addr 19, 18 ...
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MBM29PL160TD/BD (6) Temporary Sector Unprotection Algorithm *1: All protected sectors are unprotected. *2: All previously protected sectors are protected once again. 46 -75/90 Start Temporary Unprotect Enable Command Write * 1 Perform Erase or Program Operations Temporary Unprotect Disable Command ...
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Embedded Programming Algorithm for Fast Mode Increment Address Note: The sequence is applied for ×16 mode. The addresses differ from ×8 mode. MBM29PL160TD/BD 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No Last Address ? Yes Programming ...
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MBM29PL160TD/BD ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Erase/Program Cycle ■ PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes: •Test conditions T = +25° ...
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... ORDERING INFORMATION Part No. MBM29PL160TD-75PF MBM29PL160TD-90PF MBM29PL160TD-75PFTN MBM29PL160TD-90PFTN MBM29PL160TD-75PFTR MBM29PL160TD-90PFTR MBM29PL160BD-75PF MBM29PL160BD-90PF MBM29PL160BD-75PFTN MBM29PL160BD-90PFTN MBM29PL160BD-75PFTR MBM29PL160BD-90PFTR MBM29PL160 T D DEVICE NUMBER/DESCRIPTION MBM29PL160 16 Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Page Mode Flash Memory 3.0 V-only Read, Write, and Erase MBM29PL160TD/BD Package Access Time (ns) ...
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MBM29PL160TD/BD ■ PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 -75/90 Note Values do not include resin protrusion. Resin protrusion ...
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TSOP (1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 ± 0.20 (.724 ± .008) 20.00 ± 0.20 (.787 ± .008) 2003 FUJITSU LIMITED F48030S-c-6-7 C MBM29PL160TD/BD Note Values do not include resin ...
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MBM29PL160TD/BD (Continued) 44-pin plastic SOP (FPT-44P-M16) +0. 28.45 1.120 –0.20 44 INDEX 1 1.27(.050) 0.42 .017 0.10(.004) 2002 FUJITSU LIMITED F44023S-c-6 -75/90 Note These dimensions include resin protrusion. Note These ...
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MEMO Retired Product DS05-20872-4E_July 31, 2007 MBM29PL160TD/BD -75/90 53 ...
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MBM29PL160TD/BD MEMO 54 -75/90 Retired Product DS05-20872-4E_July 31, 2007 ...
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Revision History Revision DS05-20872-4E（July 31, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29PL160TD/BD Retired Product DS05-20872-4E_July 31, 2007 ...
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MBM29PL160TD/BD FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...