MBM29PL160TD-75PFTN Meet Spansion Inc., MBM29PL160TD-75PFTN Datasheet
MBM29PL160TD-75PFTN
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MBM29PL160TD-75PFTN Summary of contents
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... There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29PL160TD/BD -75/90 Revision DS05-20872-4E -75/90 ...
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... This page left intentionally blank MBM29PL160TD/BD_DS05-20872-4E July 31, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... MBM29PL160TD/BD ■ DESCRIPTION The MBM29PL160TD/ M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The device is designed to be programmed in-system with the standard system 3 are not required for write or erase operations ...
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... The standard MBM29PL160TD/BD offers access times and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29PL160TD/BD is pin and command set compatible with JEDEC standard E written to the command register using standard microprocessor write timings ...
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... MBM29PL160TD/BD ■ FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with MASK ROM pinouts 48-pin TSOP (1) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) 44-pin SOP (Package suffix: PF) • ...
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... (FPT-44P-M16) MBM29PL160TD/BD TSOP(1) BYTE 1 (Marking Side ...
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... MBM29PL160TD/BD ■ PIN DESCRIPTIONS Pin name Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable BYTE Selects 8-bit or 16-bit mode V Device Ground SS V Device Power Supply (2 3 N.C. Pin Not Connected Internally 8 -75/90 Function Retired Product DS05-20872-4E_July 31, 2007 ...
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... State WE Control BYTE Command Register CE OE Low V Detector ■ LOGIC SYMBOL MBM29PL160TD/BD Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder ...
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... Standard Command Definitions Table". *2: Refer to the section on “Sector Protection” in ■FUNCTIONAL DESCRIPTION. *3: WE can * 3.3 V ±10% CC MBM29PL160TD/BD User Bus Operation Table (BYTE = V Operation Auto-Select Manufacture Code * 1 Auto-Select Device Code * 3 Read * Standby Output Disable Write (Program/Erase) ...
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... “H” or “L” for all address commands except or Program Address (PA) and 19 11 Sector Address (SA). • Bus operations are defined in "MBM29PL160TD/BD User Bus Operation Tables (BYTE = V BYTE = V )". IL • Address of the memory location to be read Autoselect read address that sets Address of the memory location to be programmed ...
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... Word Query 2 Command * 2 Byte *1: This command is valid during fast mode. *2: Addresses from system set to A *3: The data “00h” is also acceptable. MBM29PL160TD/BD Sector Protection Verify Autoselect Code Table Type Manufacture’s Code MBM29PL160TD Device Code MBM29PL160BD Sector Protection Temporary Sector Unprotection * for Byte mode ...
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... A (B) -1 MBM29PL160BD 0 2245h (W) Sector Protection* 01h Temporary Sector 01h Unprotection (B): Byte mode (W): Word mode HI-Z: High byte mode are High-Z and MBM29PL160TD/BD Expanded Autoselect Code Table HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI ...
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... One 8 K word, two 4 K words, one 112 K word, and seven 128 K words sectors in word mode. • One 16 K byte, two 8 K bytes, one 224 K byte, and seven 256 K bytes sectors in byte mode. • Individual-sector, multiple-sector, or bulk-erase capability. • Individual or multiple-sector protection is user definable. MBM29PL160TD Top Boot Sector Architecture Sector Sector Size SA0 ...
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... Sector Address Table (MBM29PL160TD) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 ...
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... MBM29PL160TD/BD Common Flash Memory Interface Code Table Description Query-unique ASCII string “QRY” Primary OEM Command Set 2h : AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V Min (write/erase ...
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... The MBM29PL160TD/BD is capable of fast Page read mode and is compatible with the Page mode MASK ROM read operation. This mode provides faster read access speed for random locations within a page. The Page size of the MBM29PL160TD/BD device is 8 words bytes, within the appropriate Page being selected by the higheraddress bits A ...
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... The manufacturer and device codes may also be read via the command register, for instances when the MBM29PL160TD/BD is erased or programmed in a system without access to high voltage on the A command sequence is illustrated in "MBM29PL160TD/BD Standard Command Definitions Table" in ■DEVICE BUS OPERATIONS (see “Autoselect Command” in ■COMMAND DEFINITIONS. ...
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... BUS OPERATIONS for Autoselect codes. Word/Byte Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29PL160TD/BD device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed ...
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... Following the last command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for ×16 (XX02h for ×8) retrieves the device code (MBM29PL160TD = 27h and MBM29PL160BD = 45h for ×8 mode; MBM29PL160TD = 2227h and MBM29PL160BD = 2245h for ×16 mode). ...
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... WE. After a time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing six-bus cycle operations on "MBM29PL160TD/BD Standard Command Definitions Table" in ■DEVICE BUS OPERATIONS. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 µ ...
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... MBM29PL160TD/BD controls or timings during these operations. (See "(5) AC Waveforms for Chip/Sector Erase Operations" in ■TIMING DIAGRAM.) The automatic sector erase begins after the 50 µs time out from the rising edge of the pulse for the last sector erase command pulse and terminates when the data on DQ section) at which time the device returns to the read mode. Data polling must be performed at an address within any of the sectors being erased. Multiple Sector Erase Time ...
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... Extended Command (1) Fast Mode MBM29PL160TD/BD has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... DQ 6 Toggle Bit I The MBM29PL160TD/BD also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... Data Polling is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions. The OE and WE pins will control the output disable functions as described in "MBM29PL160TD/BD User Bus Operation Tables (BYTE = )" in ■DEVICE BUS OPERATIONS. ...
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... Data Protection The MBM29PL160TD/BD is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine to the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequence ...
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... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. MBM29PL160TD/BD Rating Symbol Min Tstg – ...
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... MBM29PL160TD/BD ■ MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2 +2.0 V +13.5 V +13 +0 Note : This waveform is applied for A 28 -75/ Maximum Undershoot Waveform Maximum Overshoot Waveform OE. 9 Maximum Overshoot Waveform 2 Retired Product DS05-20872-4E_July 31, 2007 ...
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... CC *2: l active while Embedded Erase or Embedded Program is in progress. CC *3: Automatic sleep mode enables the low power mode when addresses remain stable for 150 ns. *4: Applicable only for sector protection. *5: Applicable only for V applying. CC MBM29PL160TD/BD Conditions 5 Max LI IN ...
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... Output Enable to Output High-Z Output Hold Time From Address OE, Whichever Occurs First CE to BYTE Switching Low or High Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29PL160TD/BD-75) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1 ...
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... CE Setup Time to WE Active * 2 Recover Time From RY/BY BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Delay Time from Embedded Output Enable *1: This does not include the preprogramming time. *2: This timing is for Sector Protection operation. MBM29PL160TD/BD Symbol -75 Min Typ Max JEDEC Standard ⎯ ...
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... MBM29PL160TD/BD ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 32 -75/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...
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... AC Waveforms for Page Read Mode Operations OEH WE High-Z Outputs MBM29PL160TD/BD Address Valid PRC t ACC PACC Retired Product DS05-20872-4E_July 31, 2007 -75/ PACC ...
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... MBM29PL160TD/BD (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL WE t A0h Data Notes: • address of the memory location to be programmed. • data to be programmed at word address. • the output of the complement of the data written to the device. ...
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... OUT • Figure indicates last two bus cycles out of four bus cycle sequence. • These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) MBM29PL160TD/BD 3rd Bus Cycle Data Polling PA 555h ...
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... MBM29PL160TD/BD (5) AC Waveforms for Chip/Sector Erase Operations Address GHWL WE Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note : These waveforms are for the ×16 mode. The addresses differ from ×8 mode. ...
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... Valid Data (The device has completed the Embedded operation.) 7 (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data Stops toggling. (The device has completed the Embedded operation.) 6 MBM29PL160TD/ OEH WHWH1 Output Flag 6 ...
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... MBM29PL160TD/BD (8) Timing Diagram for Word Mode Configuration CE BYTE ELFH (9) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL A-1 (10) BYTE Timing Diagram for Write Operations BYTE 38 -75/ FHQV ...
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... VLHT VLHT WE t CSP CE Data t VCS V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note byte mode MBM29PL160TD/ OESP WPP VLHT t VLHT Retired Product DS05-20872-4E_July 31, 2007 -75/90 SAY 01h ...
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... MBM29PL160TD/BD (12 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with read from the erase-suspended sector -75/90 Enter Erase Suspend Program Erase Erase Suspend Read Suspend Read Program Retired Product DS05-20872-4E_July 31, 2007 ...
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... FLOW CHART (1) Embedded Program TM Algorithm Increment Address Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. MBM29PL160TD/BD Start Write Program Command Sequence (See Below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): ...
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... MBM29PL160TD/BD (2) Embedded Erase TM Algorithm Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note : The sequence is applied for ×16 mode. The addresses differ from ×8 mode. 42 -75/90 Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit from Device ...
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... Data Polling Algorithm * : DQ is rechecked even MBM29PL160TD/BD VA =Address for programming =Any of the sector addresses Start Read Byte =Any of the sector addresses ( Addr Yes DQ = Data Yes Read Byte ( Addr Yes DQ = Data Fail Pass = “ ...
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... MBM29PL160TD/BD (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling rechecked even changing to “1”. 44 -75/90 Start *1 Read ( Addr. = "H" or "L" *1 Read ( Addr. = "H" or "L" Toggle? Yes Yes ...
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... Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode MBM29PL160TD/BD Start Setup Sector Addr 19 PLSCNT = Activate WE Pulse Time out 100 µ ...
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... MBM29PL160TD/BD (6) Temporary Sector Unprotection Algorithm *1: All protected sectors are unprotected. *2: All previously protected sectors are protected once again. 46 -75/90 Start Temporary Unprotect Enable Command Write * 1 Perform Erase or Program Operations Temporary Unprotect Disable Command Write Temporary Sector Unprotection Completed *2 Retired Product DS05-20872-4E_July 31, 2007 ...
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... Embedded Programming Algorithm for Fast Mode Increment Address Note: The sequence is applied for ×16 mode. The addresses differ from ×8 mode. MBM29PL160TD/BD 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling Device No Last Address ? Yes Programming Completed XXXh/90h XXXh/F0h Retired Product DS05-20872-4E_July 31, 2007 ...
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... MBM29PL160TD/BD ■ ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Erase/Program Cycle ■ PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes: •Test conditions T = +25° 1.0 MHz A •DQ /A pin capacitance is stipulated by output capacitance. ...
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... ORDERING INFORMATION Part No. MBM29PL160TD-75PF MBM29PL160TD-90PF MBM29PL160TD-75PFTN MBM29PL160TD-90PFTN MBM29PL160TD-75PFTR MBM29PL160TD-90PFTR MBM29PL160BD-75PF MBM29PL160BD-90PF MBM29PL160BD-75PFTN MBM29PL160BD-90PFTN MBM29PL160BD-75PFTR MBM29PL160BD-90PFTR MBM29PL160 T D DEVICE NUMBER/DESCRIPTION MBM29PL160 16 Mega-bit (2M × 8-Bit or 1M × 16-Bit) CMOS Page Mode Flash Memory 3.0 V-only Read, Write, and Erase MBM29PL160TD/BD Package Access Time (ns) ...
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... MBM29PL160TD/BD ■ PACKAGE DIMENSIONS 48-pin plastic TSOP (1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 -75/90 Note Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006)Max(each side). Note 2) Pins width and pins thickness include plating thickness. ...
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... FUJITSU LIMITED F48030S-c-6-7 C MBM29PL160TD/BD Note Values do not include resin protrusion. Resin protrusion and gate protrusion are +0.15(.006)Max(each side). Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. 48 Details of "A" part 25 +0 ...
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... MBM29PL160TD/BD (Continued) 44-pin plastic SOP (FPT-44P-M16) +0. 28.45 1.120 –0.20 44 INDEX 1 1.27(.050) 0.42 .017 0.10(.004) 2002 FUJITSU LIMITED F44023S-c-6 -75/90 Note These dimensions include resin protrusion. Note These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. ...
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... MEMO Retired Product DS05-20872-4E_July 31, 2007 MBM29PL160TD/BD -75/90 53 ...
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... MBM29PL160TD/BD MEMO 54 -75/90 Retired Product DS05-20872-4E_July 31, 2007 ...
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... Revision History Revision DS05-20872-4E（July 31, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29PL160TD/BD Retired Product DS05-20872-4E_July 31, 2007 -75/90 55 ...
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... MBM29PL160TD/BD FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94088-3470, U ...