AM29F400AB-120EC Meet Spansion Inc., AM29F400AB-120EC Datasheet

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AM29F400AB-120EC

Manufacturer Part Number
AM29F400AB-120EC
Description
Manufacturer
Meet Spansion Inc.
Datasheet
Am29F400AT/Am29F400AB
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
GENERAL DESCRIPTION
The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory
organized as 512 Kbytes of 8 bits each or 256 Kwords
of 16 bits each. The 4 Mbits of data is divided into 11
sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
and seven 64 Kbytes, for flexible erase capability. The
8 bits of data will appear on DQ0–DQ7 or 16 bits on
DQ0–DQ15. The Am29F400A is offered in 44-pin SO
and 48-pin TSOP packages. This device is designed
to be programmed in-system with the standard system
5.0 Volt V
program or erase operations. The device can also be re-
programmed in standard EPROM programmers.
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
5.0 V
— Minimizes system level power requirements
Compatible with JEDEC-standards
— Pinout and software compatible with
— Superior inadvertent write protection
Package options
— 44-pin SO
— 48-pin TSOP
Minimum 100,000 write/erase cycles guaranteed
High performance
— 60 ns maximum access time
Sector erase architecture
— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and
— Any combination of sectors can be erased. Also
Sector protection
— Hardware method that disables any combination
Embedded Erase
— Automatically preprograms and erases the chip
single-power-supply flash
seven 64 Kbytes
supports full chip erase.
of sectors from write or erase operations.
Implemented using standard PROM
programming equipment.
or any sector
PRELIMINARY
CC
10% for read and write operations
supply. 12.0 Volt V
Algorithms
PP
is not required for
The standard Am29F400A offers access times of
60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high
speed microprocessors to operate without wait states.
To eliminate bus contention the device has sepa-
rate chip enable (CE), write enable (WE) and output
enable (OE) controls.
The Am29F400A is entirely command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine
which controls the erase and programming circuitry.
Embedded Program
— Automatically programs and verifies data at
Data Polling and Toggle Bit feature for detection
of program or erase cycle completion
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
Erase Suspend/Resume
— Supports reading data from a sector not being
Low power consumption
— 20 mA typical active read current for Byte Mode
— 28 mA typical active read current for Word Mode
— 30 mA typical program/erase current
Enhanced power management for standby
mode
— 1 A typical standby current
Boot Code Sector Architecture
— T = Top sector
— B = Bottom sector
Hardware RESET pin
— Resets internal state machine to the read mode
specified address
erase cycle completion
erased
Publication# 20380
Issue Date: April 1997
Algorithms
Rev: B Amendment/0

Related parts for AM29F400AB-120EC

AM29F400AB-120EC Summary of contents

Page 1

... PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V 10% for read and write operations — Minimizes system level power requirements Compatible with JEDEC-standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection Package options — ...

Page 2

... SA1 SA0 detector au- CC Am29F400AT Sector Architecture SA10 SA9 SA8 SA7 SA6 SA5 SA4 SA3 SA2 SA1 SA0 Am29F400AB Sector Architecture Am29F400AT/Am29F400AB (x8) (x16) 7FFFFh 3FFFFh 16 Kbyte 7BFFFh 3DFFFh 8 Kbyte 79FFFh 3CFFFh 8 Kbyte 77FFFh 3BFFFh 32 Kbyte 6FFFFh 37FFFh 64 Kbyte 5FFFFh 2FFFFh 64 Kbyte ...

Page 3

... Am29F400A -65 - RY/BY Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F400AT/Am29F400AB -90 -120 -150 90 120 150 90 120 150 DQ0–DQ15 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix 20380B-3 ...

Page 4

... A12 A13 A14 A15 34 A16 BYTE DQ15/A DQ0 15 30 DQ7 29 DQ14 DQ8 16 28 DQ6 DQ1 17 27 DQ13 DQ9 18 26 DQ5 DQ2 19 DQ10 20 25 DQ12 24 DQ4 DQ3 DQ11 22 20380B-4 Am29F400AT/Am29F400AB ...

Page 5

... DQ11 DQ3 14 DQ10 15 DQ2 16 DQ9 17 DQ1 18 19 DQ8 20 DQ0 Standard TSOP Reverse TSOP Am29F400AT/Am29F400AB A16 48 BYTE DQ15/A-1 44 DQ7 DQ14 43 DQ6 42 DQ13 41 DQ5 40 DQ12 39 DQ4 DQ11 36 DQ3 ...

Page 6

... Hardware Reset Pin, Active Low RY/BY = Ready/Busy Output V = +5.0 Volt Single-Power Supply SS ( 10% for -90, -120, -150 for -75 Device Ground Write Enable LOGIC SYMBOL A-1 18 A0–A17 CE (E) OE (G) WE (W) RESET BYTE Am29F400AT/Am29F400AB DQ0–DQ15 RY/BY 20380B-7 ...

Page 7

... BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29F400AT/Am29F400AB Valid Combinations 7 ...

Page 8

... V typically reduced to less than TTL standby mode is achieved with the CE pin held at V this condition the current is typically reduced to 1 mA. In the standby mode the outputs are in the high imped- ance state, independent of the OE input. Am29F400AT/Am29F400AB ) DQ0– ...

Page 9

... IL (AMD=01H) and byte 1 ( code (Am29F400AT = 23H and Am29F400AB = ABH for x8 mode; Am29F400AT = 2223H and Am29F400AB = 22ABH for x16 mode). These two bytes/words are given in the table below. All identifiers for manufacturer and device will exhibit odd parity with DQ7 defined as the parity bit ...

Page 10

... SA2 0 1 SA3 0 1 SA4 1 0 SA5 1 0 SA6 1 1 SA7 1 1 SA8 1 1 SA9 1 1 SA10 1 1 Table 6. Sector Address Tables (Am29F400AB) A17 A16 SA0 0 0 SA1 0 0 SA2 0 0 SA3 0 0 SA4 0 0 SA5 0 1 SA6 0 1 SA7 1 0 SA8 ...

Page 11

... Erase Suspend (B0H) and Erase Resume (30H) com- mands are valid only while the Sector Erase operation is in progress. Moreover, both Reset/Read commands are functionally equivalent, resetting the device to the read mode. Am29F400AT/Am29F400AB 11 ...

Page 12

... This default value en- sures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. Am29F400AT/Am29F400AB Fifth Bus Sixth Bus Write Cycle Write Cycle ...

Page 13

... Following the command write, a read cycle from ad- dress XX00H retrieves the manufacture code of 01H. A read cycle from address XX01H returns the device code (Am29F400AT = 23H and Am29F400AB = ABH for x8 mode; Am29F400AT = 2223H and Am29F400AB = 22ABH for x16 mode) (see Tables 3 and 4). ...

Page 14

... Resume command at this point will be ignored. An- other Erase Suspend command can be written after the chip has resumed erasing. Table 8. Write Operation Status DQ7 DQ7 0 DQ7 0 Am29F400AT/Am29F400AB ave DQ6 DQ5 DQ3 Toggle ...

Page 15

... To insure the command has been ac- cepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second sta- tus check, the command may not have been accepted. Refer to Table 8: Write Operation Status. Am29F400AT/Am29F400AB 15 ...

Page 16

... Power-Up Write Inhibit Power-up of the device with VIL and will not accept commands on the rising edge of WE. IH The internal state machine is automatically reset to the read mode on power-up. Am29F400AT/Am29F400AB power-up CC (see DC Characteristics section for < the command register is CC LKO > ...

Page 17

... EMBEDDED ALGORITHMS Increment Address Program Command Sequence (Address/Command): Figure 1. Embedded Programming Algorithm Start Write Program Command Sequence (see below) Data Poll Device No Last Address ? Yes Programming Completed 5555H/AAH 2AAAH/55H 5555H/A0H Program Address/Program Data Am29F400AT/Am29F400AB 20380B-8 17 ...

Page 18

... Write Erase Command Sequence (see below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): Sector Address/30H Sector Address/30H Sector Address/30H Figure 2. Embedded Erase Algorithm Am29F400AT/Am29F400AB 5555H/AAH 2AAAH/55H 5555H/80H 5555H/AAH 2AAAH/55H Additional sector erase commands are optional 20380B-9 ...

Page 19

... Addr=VA operation = Valid address equals any non-protected sector group address during chip erase Yes DQ7=Data ? No No DQ5=1 ? Yes Read Byte (DQ0-DQ7) Addr=VA Yes DQ7=Data ? Pass No Fail Figure 3. Data Polling Algorithm Am29F400AT/Am29F400AB 20380B-10 19 ...

Page 20

... Addr=Don’t Care No DQ6=Toggle ? Yes No DQ5=1 ? Yes Read Byte (DQ0–DQ7) Addr=Don’t Care No DQ6=Toggle ? Yes Fail Figure 4. Toggle Bit Algorithm -2 Maximum Negative Overshoot Waveform 2 Maximum Positive Overshoot Waveform Am29F400AT/Am29F400AB Pass 20380B-11 20380B-12 20380B-13 ...

Page 21

... Ambient Temperature (T V Supply Voltages CC V for Am29F400T/B-65 +4. +5. for Am29F400T/B-70, -90, CC -120, -150 . . . . . . . . . . . . . . . . . . . +4. +5.50 V Operating ranges define those limits between which the func- tionality of the device is guaranteed Am29F400AT/Am29F400AB ). . . . . . . . . . . . 0˚C to +70˚ -40˚C to +85˚ -55˚C to +125˚ ...

Page 22

... V OUT Max 5 5.8 mA Min -2.5 mA Min Am29F400AT/Am29F400AB Min Max Unit 1 Max 1.0 A Byte 40 mA Word 1 –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4.2 V ...

Page 23

... Max 5 5.8 mA Min –2.5 mA Min –100 Min Am29F400AT/Am29F400AB Min Typ Max Unit 1 1 -0.5 0 0.3 CC 11.5 12.5 V 0.45 V 0.85 ...

Page 24

... Max 5 Input Pulse Levels: 0. 2.4 V Timing Measurement Reference Level: 0.8 V and 2.0 V input and output 3. Output Driver Disable Time 4. Not 100% tested. 5.0 V IN3064 2 Equivalent C L 6.2 k Figure 7. Test Conditions Am29F400AT/Am29F400AB Speed Option (Notes 1 and 2) -70 -90 -120 -150 70 90 120 150 70 90 120 150 ...

Page 25

... Min 0 Min 0 Min 35 Min 20 Byte Typ 7 Word Typ 14 Typ 1.0 Max 8 Min 50 (Notes 2, 3) Min 500 Min 4 Min 500 Max 20 Min 30 Min 4 Am29F400AT/Am29F400AB -70 -90 -120 -150 Unit 70 90 120 150 150 ...

Page 26

... Don’t Care, Any Change Permitted Does Not Apply t RC Addresses Stable t ACC Output Valid Am29F400AT/Am29F400AB OUTPUTS Will Be Steady Will Be Changing from Will Be Changing from Changing, State Unknown Center Line is High- Impedance “Off” State ...

Page 27

... These waveforms are for the x16 mode. Figure 10. AC Waveforms Chip/Sector Erase Operations Data Polling WHWH1 DQ7 OUT t AH 2AAAH 5555H 5555H t AS 55H 80H AAH Am29F400AT/Am29F400AB 20380B-16 2AAAH SA 55H 10H/30H 20380B-17 27 ...

Page 28

... Figure 12. AC Waveforms for Toggle Bit During Embedded Algorithm Operations DQ7 t WHWH DQ0-DQ6=Invalid * DQ6=Toggle DQ6=Toggle t OE Am29F400AT/Am29F400AB High Z DQ7= Valid Data DQ0-DQ6 Valid Data 20380B-18 DQ6= DQ0-DQ7 Stop Toggling Valid 20380B-19 ...

Page 29

... SWITCHING WAVEFORMS CE WE RY/BY Figure 13. RY/BY Timing Diagram During Program/Erase Operations RESET The rising edge of the last WE signal Entire programming or erase operations t BUSY Ready Figure 14. RESET Timing Diagram Am29F400AT/Am29F400AB 20380B-20 20380B-21 29 ...

Page 30

... Figure 15. BYTE Timing Diagram for Read Operation CE WE BYTE Figure 16. BYTE Timing Diagram for Write Operations Data Output Data Output (DQ0-DQ14) (DQ0-DQ7) DQ15 Address Output Input t FLQZ The falling edge of the last WE signal t SET ( HOLD AH Am29F400AT/Am29F400AB 20380B-22 20380B-23 ...

Page 31

... Figure 17. Temporary Sector Unprotect Algorithm 12 V RESET t VIDR CE WE RY/BY Figure 18 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Group Unprotect Completed (Note 2) Program or Erase Command Sequence Temporary Sector Unprotect Timing Diagram Am29F400AT/Am29F400AB 20380B- 20380B-25 31 ...

Page 32

... Min 0 Read (Note 2) Min 0 Toggle and Data Min 10 Polling (Note 2) Min 0 Min 0 Min 0 Min 35 Min 20 Byte Typ 7 Word Typ 14 Typ 1.0 Max 8 Max 20 Am29F400AT/Am29F400AB -70 -90 -120 -150 Unit 70 90 120 150 ...

Page 33

... DQ7 Limits Max Unit 8 sec Excludes 00H programming prior to erasure 88 sec Excludes 00H programming prior to erasure 300 (Note 3) s Excludes system-level overhead (Note 4) 600 s Excludes system-level overhead (Note 4) 10.8 (Notes 3, 5) sec Excludes system-level overhead (Note 4) , 100,000 cycles. CC Am29F400AT/Am29F400AB D OUT 20380B-26 Comments 33 ...

Page 34

... V, one pin at a time. CC Test Setup OUT Test Setup Typ 8.5 OUT Test Conditions 150 C 125 C Am29F400AT/Am29F400AB Min Max –1 1 –100 mA +100 mA Typ Max Unit 6 7 Max Unit 7 ...

Page 35

... Corrected WE for read operations; was don’t care (X), is now H. Standby Mode: Corrected standby mode current; was 100 A, is now 5 A. Table 5, Sector Address Tables (Am29F400AB): Corrected x16 starting address for SA5; was 1C000h, is now 28000h Erase Suspend: Third paragraph, third sentence: Deleted the word “ ...

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