STQ-2016-3Z ETC-unknow, STQ-2016-3Z Datasheet

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STQ-2016-3Z

Manufacturer Part Number
STQ-2016-3Z
Description
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STQ-2016-3Z
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
STQ-2016-3ZSB
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
STQ-2016-3ZSQ
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
STQ-2016-3ZSR
Manufacturer:
RFMD
Quantity:
5 000
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature
and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
Product Specifications – W-CDMA Modulation
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice.
No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in
life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Channel Power
Power Flatness
Adjacent Channel Power
First Alternate Channel
Power
Second Alternate Channel
Power
Broadband Noise Floor
Signal-to-Noise Ratio
Product Description
The Sirenza Microdevices STQ-2016-3 is a direct quadrature
modulator targeted for use in W-CDMA applications. This
device features a 700-2500 MHz operating frequency band,
excellent carrier and sideband suppression, and a low broad-
band noise floor.
The STQ-2016-3 uses silicon germanium (SiGe) device
technology and delivers a typical channel power of -11 dBm
with adjacent channel power less than -65 dBc. A digital
input shut-down feature is included that, when enabled,
attenuates the output by 60 dB. The device is packaged in an
industry standard 16 pin TSSOP with exposed paddle for
superb RF and thermal ground. The STQ-2016-3Z is pack-
aged in a RoHs compliant and Green 16-pin TSSOP with
matte tin finish.
Parameters
BBQP
VCC
BBIP
VEE
LOP
LON
VEE
SD
1
2
3
4
5
6
7
8
Functional Block Diagram
QUADRATURE
GENERATOR
LO
Guaranteed through
Output Power test as
specified on Page 2
Range across fre-
quency band
Guaranteed through
IM3 test as specified
on Page 2
60 MHz offset from
carrier
Noise Offset: 60 MHz,
Measured in a 3.84 MHz
bandwidth
Comments
16
15
14
13
12
11
10
9
dBm/Hz
dBm
Unit
dBc
dBc
dBc
BBQN
VCC
VEE
RFP
RFN
VEE
VCC
BBIN
dB
dB
Phone: (800) SMI-MMIC
(See Table 1 for Test Conditions)
Min.
-13
79
869-894 MHz
1
Typ.
-157
0.25
-11
-65
-75
-75
81
STQ-2016-3
STQ-2016-3Z
700-2500 MHz Direct Quadrature Modulator
Applications
Product Features
Max.
W-CDMA Transmitters
Excellent carrier feedthrough, -40 dBm constant
with output power
+4.0 dBm output P1dB
Wide baseband input, DC - 500 MHz
Superb phase accuracy and amplitude balance,
±0.5 deg./±0.2 dB
Very low noise floor, -157 dBm/Hz
Low ACP, -65 dBc
-156
0.5
-63
-68
-68
Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm)
-9
16 pin TSSOP with Exposed Ground Pad
-14.5
Min.
77
Package Height: 0.039 inches (1.0 mm)
1930-1990 MHz
-12.5
Typ.
0.25
-157
-65
-73
-73
79
-10.5
Max.
-156
0.5
-63
-68
-68
Pb
Min.
-15
76
2110-2170 MHz
&
RoHS Compliant
http://www.sirenza.com
Green
EDS-104229 Rev B
Typ.
0.25
-156
-13
-65
-73
-73
78
Package
Max.
-155
-11
0.5
-63
-68
-68
Type*
C,D
C,D
C,D
C,D
C,D
E
E

Related parts for STQ-2016-3Z

STQ-2016-3Z Summary of contents

Page 1

... The device is packaged in an industry standard 16 pin TSSOP with exposed paddle for superb RF and thermal ground. The STQ-2016-3Z is pack- aged in a RoHs compliant and Green 16-pin TSSOP with matte tin finish. ...

Page 2

... Definition 100% tested (see Table 2 for conditions Sample tested Characterized on samples over temperature and Vcc Design parameter 100% tested through correlated CW parameter Device input specification. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Vcc (V) Comments Unit 4 ...

Page 3

... Definition 100% tested (see Table 2 for conditions Sample tested Characterized on samples over temperature and Vcc Design parameter 100 % tested through correlated CW parameter Device input specification. **Peak-to-Peak Differential (Vpp, Diff.) Baseband Voltage Definition: 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Unit MHz dBm ...

Page 4

... V DC Part Number Ordering Information +10 dBm Part Number STQ-2016 STQ-2016-3Z -40 to +85 ºC -65 to +150 ºC Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. Phone: (800) SMI-MMIC 4 +5V +25ºC 1.9V DC bias, 200kHz fre- quency, 300 mVp-p per pin = ...

Page 5

... I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 5. Broadband Noise Floor (60 MHz Offset) Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Broadband Noise Floor ...

Page 6

... I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 11. Signal-to-Noise Ratio Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Signal-to-Noise Ratio ...

Page 7

... Vcc (Vdc) I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 17. Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Channel Power ...

Page 8

... LO Frequency (MHz) I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 V pp, Diff. I/Q Drive = 3 V pp, Diff. I/Q Drive = 4 V pp, Diff. Figure 23. Adjacent Channel Power Vs. LO Frequency, LO Drive = +4.0 dBm. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire ...

Page 9

... I/Q Drive = 1 V pp, Diff. I/Q Drive = 2 V pp, Diff. I/Q Drive = 3 V pp, Diff. I/Q Drive = 4 V pp, Diff. Figure 29. First Alternate Channel Power Vs. LO Drive Level, LO Frequency = 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire ...

Page 10

... Temperature (Deg I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 35. First Alternate Channel Power Vs. Temperature, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire ...

Page 11

... I/Q Drive = 1.5 Vpp, Diff. I/Q Drive = 1.7 Vpp, Diff. I/Q Drive = 1.9 Vpp, Diff. Figure 41. Second Alternate Channel Power Vs. Vcc, LO Drive = +4.0 dBm @ 2140 MHz. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Second Alternate Channel Power ...

Page 12

... First Altern ate C han nel Power (dBc) Figure 47. First Alternate Channel Power Distribution, 4 Production Lots, 120 Units. LO Drive = +4.0 dBm @ 2140 MHz. I/Q Drive Level = 1.7 Vpp, Diff. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire ...

Page 13

... TOLERANCE ±.004" (0.1mm) UNLESS OTHERWISE SPECIFIED. 3. COPLANARITY: .004" (0.1mm) 4. CONTROLLING DIMENSION IS MILLIMETER, CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. 5. FOLLOWED FROM JEDEC MO-153. 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire Mean = -156.65 Std. Dev ...

Page 14

... Venkel C9, C17 1nF 2 Venkel C3 2.2uF 1 Venkel C4, C5, C10, 10pF 4 Venkel C16 SH1 1 3M 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire BBQN VCC U1 16 BBQP BBQN C9 15 VCC VCC C10 ...

Page 15

... Venkel C9, C17 1nF 2 Venkel C3 2.2uF 1 Venkel C4, C5, C10, 2.2pF 4 Venkel C16 SH1 1 3M 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire BBQN VCC U1 16 BBQP BBQN C9 15 VCC VCC C10 ...

Page 16

... I and Q channels 24.9 303 S. Technology Court, Broomfield, CO 80021 STQ-2016-3 Dire and -P ass F ilter 2080 2140 ...

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