BTA212B-800B NXP Semiconductors, BTA212B-800B Datasheet - Page 4

• Manufacturer Part Number: BTA212B-800B
• Description: Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

September 1997
Three quadrant triacs
high commutation
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
20
15
10
5
0
100
1000
on-state current I
Semiconductors
80
60
40
20
100
0
Ptot / W
0
10
10us
1
ITSM / A
ITSM / A
dI /dt limit
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T
100us
1
T(RMS)
5
TSM
Number of cycles at 50Hz
10
TSM
IT(RMS) / A
, versus number of cycles, for
, where α = conduction angle.
BT138
, versus pulse width t
BTA212
BT138
1ms
T / s
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
10
p
100
≤ 20ms.
10ms
T
T
Tmb(max) / C
120
90
60
30
tot
= 180
, versus rms
I TSM
I TSM
time
time
p
100ms
, for
15
1000
95
102.5
110
117.5
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
15
10
Fig.4. Maximum permissible rms current I
GT
5
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
(T
5
0
0.01
1
-50
VGT(25 C)
IT(RMS) / A
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT138
BT136
BT138
Tj / C
Tmb / C
50
50
BTA212B series B
mb
Product specification
1
≤ 99˚C.
100
100
99 C
mb
Rev 1.200
T(RMS)
.
150
10
150
,
j
.