BTA216B-600F NXP Semiconductors, BTA216B-600F Datasheet - Page 2
![Planar passivated high commutation three quadrant triac in a SOT404 plastic package This "series F" triac balances the requirements of commutation performance and gate sensitivity](/photos/41/50/415039/sot404_3d_sml.gif)
BTA216B-600F
Manufacturer Part Number
BTA216B-600F
Description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package This "series F" triac balances the requirements of commutation performance and gate sensitivity
Manufacturer
NXP Semiconductors
Datasheet
1.BTA216B-600D.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA216B-600F
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in
a plastic
mounting, intended for use in motor control
circuits or with other highly inductive loads.
These devices balance the requirements of
commutation
sensitivity. The "sensitive gate" E series and
"logic level" D series are intended for
interfacing with low power drivers, including
micro controllers.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
envelope suitable for surface
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
performance
and
gate
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
mb
j
G
= 25 ˚C prior to
/dt = 0.2 A/µs
= 20 A; I
≤ 99 ˚C
1
QUICK REFERENCE DATA
SYMBOL
V
I
I
2
T(RMS)
TSM
DRM
G
3
= 0.2 A;
1
mb
voltages
current
MIN.
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
-40
-
-
-
-
-
-
-
-
-
BTA216B series D, E and F
BTA216B-
BTA216B-
BTA216B-
SYMBOL
T2
MAX.
600
140
150
100
150
125
0.5
16
98
2
5
1
Product specification
MAX.
600D
600E
600F
600
140
16
Rev 2.000
UNIT
UNIT
A/µs
A
˚C
˚C
G
W
W
V
A
A
V
A
A
A
A
T1
2
s