BT169G-L NXP Semiconductors, BT169G-L Datasheet

Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package

BT169G-L

Manufacturer Part Number
BT169G-L
Description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT169G-L
Manufacturer:
INFINEON原装
Quantity:
20 000
1. Product profile
Table 1.
Symbol
V
V
I
I
Static characteristics
I
I
I
TSM
T(RMS)
GT
H
L
DRM
RRM
Quick reference data
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
non-repetitive peak on-state current half sine wave; T
RMS on-state current
gate trigger current
holding current
latching current
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)
plastic package.
BT169G-L
SCR
Rev. 2 — 10 November 2011
Planar passivated for voltage
ruggedness and reliability
Ignition circuits
Low power latching circuits
Conditions
t
see
half sine wave; T
see
V
see
V
V
see
p
D
D
D
= 10 ms; see
= 12 V; I
= 12 V; T
= 12 V; I
Figure 5
Figure
Figure 7
Figure 8
1; see
T
G
j
= 10 mA; T
= 25 °C; see
= 0.5 mA; T
Figure
j(init)
lead
Figure 2
≤ 83 °C;
= 25 °C;
4;
j
j
= 25 °C;
= 25 °C;
Figure 9
Very sensitive gate
Protection / shut-down circuits: lighting
ballasts
Protection / shut-down circuits:
Switched Mode Power Supplies
Min
-
-
-
-
15
-
-
Product data sheet
Typ
-
-
-
-
-
0.4
2
600
600
Max
8
0.8
50
1
4
Unit
V
V
A
A
µA
mA
mA

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BT169G-L Summary of contents

Page 1

... BT169G-L SCR Rev. 2 — 10 November 2011 1. Product profile 1.1 General description Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. 1.2 Features and benefits  Planar passivated for voltage ruggedness and reliability 1.3 Applications  Ignition circuits  Low power latching circuits 1 ...

Page 2

... Figure ms; sine-wave pulse mA; dI /dt = 100 mA/µ over any 20 ms period All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L Graphic symbol sym037 Version SOT54 Min Max - 600 - 600 Figure ...

Page 3

... Product data sheet 001aab449 I T(RMS) (A) 0.8 0.6 0.4 0 surge duration (s) Fig 2. 2.8 4 0.2 0.3 All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G 100 RMS on-state current as a function of lead temperature; maximum values a = 1.57 1.9 2.2 conduction form angle factor (degrees) ...

Page 4

... Fig 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT169G-L Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L 001aab499 TSM max j(init ...

Page 5

... Transient thermal impedance from junction to lead as a function of pulse width BT169G-L Product data sheet Conditions see Figure 6 printed circuit board mounted: lead length = All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L Min Typ Max - - 60 - 150 - 001aab451 ...

Page 6

... I L(Tj 100 150 - Fig 8. Normalized latching current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L Min Typ = 25 ° ° Figure 9 - 0.4 Figure °C; - 0.5 = 125 °C; ...

Page 7

... D (V/μ 100 150 Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L 001aab454 (1) (2) (3) 1.2 2 2.8 V (V) T 003aag826 (1) 50 100 150 T (° ...

Page 8

... 4.8 1.7 4.2 14.5 2.54 1.27 4.4 1.4 3.6 12.7 REFERENCES JEDEC JEITA TO-92 SC-43A All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G ( max. 2.5 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SCR SOT54 04-06-28 04-11- ...

Page 9

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BT169G-L v.2 20111110 • Modifications: Various changes to content. BT169G-L v.1 20111021 BT169G-L Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 10

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L SCR © NXP B.V. 2011. All rights reserved ...

Page 11

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 10 November 2011 BT169G-L Trademarks © NXP B.V. 2011. All rights reserved. SCR ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT169G-L SCR All rights reserved. Date of release: 10 November 2011 Document identifier: BT169G-L ...

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