BYV42EB-200 NXP Semiconductors, BYV42EB-200 Datasheet - Page 3

• Manufacturer Part Number: BYV42EB-200
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ESD LIMITING VALUE
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
July 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
I
Q
t
t
V
R
rr1
rr2
C
F
fr
th j-mb
th j-a
s
Electrostatic discharge
capacitor voltage
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
j
= 25 ˚C unless otherwise stated
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
CONDITIONS
I
I
I
V
V
I
I
-dI
I
I
F
F
F
F
F
F
F
R
R
= 15 A; T
= 15 A
= 30 A
= 2 A; V
= 1 A; V
= 0.5 A to I
= 1 A; dI
F
= V
= V
/dt = 100 A/µs
RWM
RWM
; T
R
R
F
2
j
/dt = 10 A/µs
≥ 30 V; -dI
≥ 30 V;
= 150˚C
j
R
= 100 ˚C
= 1 A; I
rec
F
/dt = 20 A/µs
= 0.25 A
BYV42E, BYV42EB series
MIN.
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
0.78
0.95
1.00
0.5
60
50
10
20
13
6
1
-
-
Product specification
MAX.
MAX.
MAX.
8
0.85
1.05
1.20
100
2.4
1.4
15
28
22
1
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
K/W
mA
µA
nC
kV
ns
ns
V
V
V
V