BYV42EB-200 NXP Semiconductors, BYV42EB-200 Datasheet - Page 4

• Manufacturer Part Number: BYV42EB-200
• Manufacturer: NXP Semiconductors

NXP Semiconductors
July 1998
Rectifier diodes
ultrafast, rugged
I
I
R
V F
F
I
F
Voltage Pulse Source
Fig.1. Definition of t
Fig.3. Circuit schematic for t
I
rrm
Fig.2. Definition of V
dI
dt
Q
F
s
R
t
Current
shunt
rr
rr1
, Q
s
D.U.T.
and I
fr
V F
rr2
to ’scope
10%
rrm
time
time
time
100%
V
fr
3
Fig.5. Maximum forward dissipation P
Fig.6. Maximum forward dissipation P
diode; sinusoidal current waveform where a = form
20
15
10
15
10
5
0
5
0
0A
0.5A
IF
IR
0
0
PF / W
PF / W
Vo = 0.705 V
Rs = 0.0097 Ohms
Vo = 0.705 V
Rs = 0.0097 Ohms
diode; square current waveform where
I
rec
5
Fig.4. Definition of t
0.1
BYV42E, BYV42EB series
factor = I
= 0.25A
I
F(AV)
5
4
10
IF(AV) / A
0.2
IF(AV) / A
=I
BYV42
BYV42
F(RMS)
F(RMS)
2.8
I = 1A
R
15
x √ D.
I
/ I
0.5
2.2
10
F(AV)
Product specification
t
p
trr2
rr2
.
T
1.9
20
Tmb(max) / C
Tmb(max) / C
F
F
D =
= f(I
= f(I
a = 1.57
D = 1.0
T
t
p
t
F(AV)
F(AV)
Rev 1.200
25
15
102
114
126
138
150
114
126
138
150
) per
) per