BYV42EB-200 NXP Semiconductors, BYV42EB-200 Datasheet - Page 5

• Manufacturer Part Number: BYV42EB-200
• Manufacturer: NXP Semiconductors

NXP Semiconductors
July 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
50
40
30
20
10
Fig.8. Maximum I
Fig.7. Maximum t
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj = 150 C
Tj = 25 C
I
F
= f(V
0.5
F
rrm
); parameter T
rr
-dIF/dt (A/us)
dIF/dt (A/us)
typ
at T
at T
VF / V
IF=1A
10
10
j
j
= 25 ˚C; per diode
= 25 ˚C; per diode
IF=20A
IF=20A
1.0
max
j
IF=1A
100
1.5
100
4
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
BYV42E, BYV42EB series
100us
Z
pulse width, tp (s)
th j-mb
IF=20A
-dIF/dt (A/us)
10A
1ms
5A
2A
1A
s
at T
= f(t
10
P
D
10ms 100ms
j
p
= 25 ˚C; per diode
).
t
Product specification
p
T
D =
BYV42E
T
t
p
t
1s
Rev 1.200
100
10s