BUK7107-40ATC NXP Semiconductors, BUK7107-40ATC Datasheet - Page 10

• Manufacturer Part Number: BUK7107-40ATC
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Drain-source clamping voltage as a function of
V DSR(CL)
(V)
120
100
52
51
50
49
(A)
I D
80
60
40
20
0
function of gate-source voltage; typical values
drain current; typical values
0
0
2
175 °C
T j = 25 °C
- 55 °C
2
4
175 °C
6
4
T j = 25 °C
V GS (V)
8
I D (A)
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Rev. 02 — 6 February 2009
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Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Drain-source clamping voltage as a function of
V DSR(CL)
V GS
(V)
(V)
10
8
6
4
2
0
56
52
48
44
40
gate charge; typical values
gate-source current; typical values
0
N-channel TrenchPLUS standard level FET
0
175 °C
BUK7107-40ATC
40
1
T j = 25 °C
14 V
V DS = 32 V
80
2
-
-I GS(CL) (mA)
Q G (nC)
55 °C
© NXP B.V. 2009. All rights reserved.
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