BUK7606-75B NXP Semiconductors, BUK7606-75B Datasheet
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK7606-75B
Available stocks
Related parts for BUK7606-75B
BUK7606-75B Summary of contents
Page 1
... BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Min ≤ sup = °C; ...
Page 3
... °C; unclamped GS j(init) 03ng89 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µ -55 -55 ...
Page 4
... Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 03ng87 = 10 μ 100 μ 100 ...
Page 5
... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B Min Typ Max Unit ...
Page 6
... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 8 DSon ° Drain-source on-state resistance as a function of gate-source voltage; typical values ...
Page 7
... Fig 10. Gate-source threshold voltage as a function of 03ng99 2.4 a 1.6 0 6.5 10 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 0 −60 ...
Page 8
... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 8000 C (pF) C iss 6000 4000 C oss 2000 C rss 0 − function of drain-source voltage ...
Page 9
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...
Page 10
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7606-75B separated from data sheet BUK75_7606_75B v.2. BUK75_7606_75B v.2 20020920 (9397 750 10278) BUK7606-75B ...
Page 11
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
Page 12
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK7606-75B ...