BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 6

• Manufacturer Part Number: BUK9606-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK9606-55B_4
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
V
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
GS(pl)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
I
T
I
see
V
T
V
R
from drain lead 6 mm from package to
center of die; T
from upper edge of drain mounting base to
center of die; T
from source lead to source bonding pad;
T
D
D
D
D
D
D
D
j
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 A; V
= 25 °C; see
= 25 °C
Figure 9
Figure 9
Figure 9
Figure 11
Figure 11
Figure 11
Figure 11
Figure 14
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 4.5 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 0 V; V
= 10 Ω; T
D
D
DS
DS
DS
DS
DS
GS
GS
DS
D
Rev. 04 — 23 July 2009
and
and
and
D
= 25 A; T
= 25 A; T
GS
GS
L
GS
GS
and
and
and
and
and
= 25 A; T
= 44 V; V
= 44 V; T
j
j
= V
= V
= V
= 25 A; T
Figure 14
Figure 16
= 1.2 Ω; V
= 15 V; T
= -15 V; T
= 25 V; f = 1 MHz;
= 25 °C
= 25 °C
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
10
10
10
12
12
12
12
15
GS
GS
GS
; T
; T
; T
j
j
= 175 °C;
= 25 °C;
j
j
j
j
GS
j
j
j
j
j
= -55 °C;
= 25 °C;
= 175 °C;
= 25 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C;
and
= -55 °C
= 25 °C
= 25 °C
= 5 V;
= 5 V;
15
Min
50
55
-
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9606-55B
N-channel TrenchMOS FET
Typ
-
-
-
1.5
-
0.02
-
2
2
-
4.8
-
5.1
60
11
22
2.4
5674
755
255
37
95
117
106
4.5
2.5
7.5
© NXP B.V. 2009. All rights reserved.
Max
-
-
2.3
2
-
1
500
100
100
6.4
5.4
12
6
-
-
-
-
7565
906
350
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
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