BUK9606-55B NXP Semiconductors, BUK9606-55B Datasheet - Page 9

• Manufacturer Part Number: BUK9606-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Gate charge waveform definitions
(A)
I
S
100
75
50
25
0
0.0
voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
0.2
Q
GS1
I
Q
D
GS
0.4
T
Q
j
= 175 ° C
GS2
Q
G(tot)
0.6
Q
GD
0.8
T
j
003aaa508
= 25 ° C
V
SD
03nj60
(V)
1.0
Rev. 04 — 23 July 2009
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
V
(V)
GS
(pF)
8000
6000
4000
2000
C
5
4
3
2
1
0
0
10
charge; typical values
as a function of drain-source voltage; typical
values
0
-1
20
1
V
C
C
C
DD
rss
oss
iss
= 14 V
BUK9606-55B
N-channel TrenchMOS FET
10
40
V
DD
V
© NXP B.V. 2009. All rights reserved.
Q
= 44 V
DS
G
(nC)
(V)
03nj67
03nj61
10
60
2
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